SEMICONDUCTOR DEVICE
    1.
    发明专利

    公开(公告)号:SG10201905607UA

    公开(公告)日:2020-02-27

    申请号:SG10201905607U

    申请日:2019-06-18

    Abstract: A semiconductor device including a substrate including an active pattern; a gate electrode crossing the active pattern; a source/drain pattern adjacent to one side of the gate electrode and on an upper portion of the active pattern; an active contact electrically connected to the source/drain pattern; and a silicide layer between the source/drain pattern and the active contact, the source/drain pattern including a body part including a plurality of semiconductor patterns; and a capping pattern on the body part, the body part has a first facet, a second facet on the first facet, and a corner edge defined where the first facet meets the second facet, the corner edge extending parallel to the substrate, the capping pattern covers the second facet of the body part and exposes the corner edge, and the silicide layer covers a top surface of the body part and a top surface of the capping pattern.

    SEMICONDUCTOR DEVICE
    4.
    发明申请

    公开(公告)号:US20230017277A1

    公开(公告)日:2023-01-19

    申请号:US17935561

    申请日:2022-09-26

    Abstract: A semiconductor device includes a channel, a first source/drain structure on a first side surface of the channel, a second source/drain structure on a second side surface of the channel, a gate structure surrounding the channel, an inner spacer layer on a side surface of the gate structure, and an outer spacer layer on an outer surface of the inner spacer layer. The first source/drain structure includes a first source/drain layer on the channel and a second source/drain layer on the first source/drain layer, and on a plane of the semiconductor device that passes through the channel, at least one of a first boundary line of the first source/drain layer in contact with the second source/drain layer and a second boundary line of the first source/drain layer in contact with the channel may be convex, extending toward the channel.

    SEMICONDUCTOR DEVICE
    6.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号:US20150287711A1

    公开(公告)日:2015-10-08

    申请号:US14562788

    申请日:2014-12-08

    Abstract: Provided is a semiconductor device which includes a substrate including a first region and a second region different from the first region, a first active pattern provided on the substrate in the first region, a second active pattern provided on the substrate in the second region, a first gate structure crossing over the first active pattern and a second gate structure crossing over the second active pattern, first source/drain regions disposed on the first active pattern at opposite sides of the first gate structure, second source/drain regions disposed on the second active pattern at opposite sides of the second gate structure, and auxiliary spacers disposed in the first region to cover a lower portion of each of the first source/drain regions.

    Abstract translation: 提供一种半导体器件,其包括:衬底,其包括第一区域和与第一区域不同的第二区域;设置在第一区域中的衬底上的第一有源图案,设置在第二区域中的衬底上的第二有源图案; 在第一有源图案上交叉的第一栅极结构和与第二有源图案交叉的第二栅极结构,在第一栅极结构的相对侧设置在第一有源图案上的第一源/漏区,设置在第二有源图案上的第二栅极结构的第二栅极结构 在第二栅极结构的相对侧的有源图案以及设置在第一区域中以覆盖每个第一源极/漏极区域的下部的辅助间隔物。

    SEMICONDUCTOR DEVICE INCLUDING AN ACTIVE PATTERN

    公开(公告)号:US20240387717A1

    公开(公告)日:2024-11-21

    申请号:US18513853

    申请日:2023-11-20

    Abstract: A semiconductor device includes: a substrate including an active pattern; a first channel structure overlapping the active pattern; a gate electrode including an electrode portion between the active pattern and the first channel structure; a semiconductor layer contacting the first channel structure; and a source/drain pattern contacting the first channel structure, wherein the first channel structure includes: a first upper channel layer; a first lower channel layer; and a first intervening channel layer disposed between the first upper channel layer and the first lower channel layer, wherein the semiconductor layer contacts a sidewall of the first upper channel layer, a sidewall of the first lower channel layer, and a sidewall of the first intervening channel layer, and wherein the semiconductor layer and the first intervening channel layer include a semiconductor material that is different from a semiconductor material of the first upper channel layer and the first lower channel layer.

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