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公开(公告)号：US20160260813A1
公开(公告)日：2016-09-08
申请号：US14854272
申请日：2015-09-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Eunae CHO , Dongjin LEE , Ji Eun LEE , Kyoung-Ho JUNG , Dong Su KO , Yongsu KIM , Jiho YOO , Sung HEO , Hyun PARK , Satoru YAMADA , Moonyoung JEONG , Sungjin KIM , Gyeongsu PARK , Han Jin LIM
IPC: H01L29/423 , H01L29/51 , H01L21/28 , H01L29/49
CPC classification number: H01L29/4236 , H01L21/28088 , H01L29/4966 , H01L29/513 , H01L29/517
Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.
Abstract translation: 提供半导体器件及其制造方法。 半导体器件包括包括沟槽的衬底。 半导体器件还包括设置在沟槽中的栅极电极和设置在衬底和栅电极之间的栅极绝缘膜。 栅电极包括栅极导体和金属元件，并且栅电极的有效功函数小于栅极导体的有效功函数。
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2.发明公开公开(公告)号：US20240170212A1
公开(公告)日：2024-05-23
申请号：US18350600
申请日：2023-07-11
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeonggyu SONG , Eunae CHO , Narae HAN , Beomseok KIM , Cheheung KIM , Jooho LEE , Wonsik CHOI
CPC classification number: H01G4/10 , H01L28/60 , H01L28/65 , H01L29/511 , H01L29/517 , H01L29/94 , H10B12/31 , H01G4/1236
Abstract: A capacitor, a semiconductor device, and an electronic apparatus including the semiconductor device are disclosed. The capacitor includes a first electrode; a second electrode disposed apart from the first electrode; a dielectric film between the first electrode and the second electrode; and a leakage current reducing layer provided on the dielectric film between the first electrode and the second electrode and including MxAlyOz.
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公开(公告)号：US20210398265A1
公开(公告)日：2021-12-23
申请号：US17354646
申请日：2021-06-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Anant BAIJAL , Hoshin SON , Eunae CHO , Sangshin PARK , Seungwon CHA
Abstract: A video quality assessment apparatus and method are provided. The video quality assessment apparatus includes a memory storing one or more instructions; and a processor configured to execute the one or more instructions stored in the memory to: identify whether a frame included in a video is a fully-blurred frame or a partially-blurred frame based on a blur level of the frame, obtain, in response to the frame being the fully-blurred frame, an analysis-based quality score with respect to the fully-blurred frame; obtain, in response to the frame being the partially-blurred frame, a model-based quality score with respect to the partially-blurred frame; and process the video based on at least one of the analysis-based quality score or the model-based quality score to obtain a processed video.
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公开(公告)号：US20190312119A1
公开(公告)日：2019-10-10
申请号：US16432298
申请日：2019-06-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Eunae CHO , Dongjin Lee , Ji Eun Lee , Kyoung-Ho Jung , Dong Su Ko , Yongsu Kim , Jiho Yoo , Sung Heo , Hyun Park , Satoru Yamada , Moonyoung Jeong , Sungjin Kim , Gyeongsu Park , Han Jin Lim
IPC: H01L29/423 , H01L29/51 , H01L29/49 , H01L21/28
Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.
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5.发明公开公开(公告)号：US20240297210A1
公开(公告)日：2024-09-05
申请号：US18662107
申请日：2024-05-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeonggyu SONG , Eunae CHO , Yongsung KIM , Boeun PARK , Narae HAN
IPC: H01G4/10
Abstract: A capacitor includes a lower electrode, an upper electrode, a dielectric film between the lower electrode and the upper electrode, and a leakage current reduction film between the upper electrode and the dielectric film. The leakage current reduction film includes a doped AlZrO film, wherein an ionic radius of a dopant contained in the doped AlZrO film is greater than or equal to about 130 picometers (pm).
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Patent Agency Ranking
公开(公告)号：US20240296817A1
公开(公告)日：2024-09-05
申请号：US18657439
申请日：2024-05-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Doyun KIM , Eunae CHO , Sangshin PARK
IPC: G10H1/00 , G10L21/028 , G10L25/63
CPC classification number: G10H1/0025 , G10L21/028 , G10L25/63 , G10H2210/066 , G10H2210/076 , G10H2210/111 , G10H2210/325 , G10H2210/391 , G10H2220/441 , G10H2250/311
Abstract: An operation method of an electronic device including obtaining multi-mood information from at least one of user situation information and screen situation information, obtaining metadata from at least one of user preference information, the multi-mood information, and external situation information, and obtaining the sheet music for music performance from the metadata by using at least one neural network.
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7.发明申请公开(公告)号：US20210390314A1
公开(公告)日：2021-12-16
申请号：US17336965
申请日：2021-06-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Anant BAIJAL , Shobhit JAIN , Sangshin PARK , Eunae CHO
Abstract: A display apparatus for generating multimedia content and an operation method thereof are provided. The display apparatus includes a display, a memory storing one or more instructions, and a processor configured to execute the one or more instructions stored in the memory. The processor is configured to obtain plot information of the multimedia content, and generate sequence information including one or more sequences of the multimedia content corresponding to the plot information by using a first artificial intelligence (AI) model, generate scene information based on the sequence information by using a second AI model, generate the multimedia content based on the scene information, and control the display to output the multimedia content.
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公开(公告)号：US20250006778A1
公开(公告)日：2025-01-02
申请号：US18510973
申请日：2023-11-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Haeryong KIM , Eunae CHO , Beomseok KIM , Jeeeun YANG , Jooho LEE
Abstract: A capacitor includes a first electrode, a second electrode spaced apart from the first electrode, a dielectric layer arranged between the first electrode and the second electrode, and an interface layer arranged between the second electrode and the dielectric layer, wherein the interface layer includes a first element, a second element, and a third element, the first element includes aluminum (Al), the second element includes gallium (Ga), and the third element includes oxygen (O).
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公开(公告)号：US20230352548A1
公开(公告)日：2023-11-02
申请号：US18219525
申请日：2023-07-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Eunae CHO , Dongjin LEE , Ji Eun LEE , Kyoung-Ho JUNG , Dong Su KO , Yongsu KIM , Jiho YOO , Sung HEO , Hyun PARK , Satoru YAMADA , Moonyoung JEONG , Sungjin KIM , Gyeongsu PARK , Han Jin LIM
IPC: H01L29/49 , H01L21/28 , H01L29/423 , H01L29/51
CPC classification number: H01L29/4236 , H01L21/28088 , H01L29/4966 , H01L29/513 , H01L29/517
Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.
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公开(公告)号：US20230058762A1
公开(公告)日：2023-02-23
申请号：US17552680
申请日：2021-12-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Narae HAN , Jeonggyu SONG , Yongsung KIM , Jooho LEE , Eunae CHO
IPC: H01L49/02 , H01L27/06 , H01L27/108
Abstract: Provided are a semiconductor device and a semiconductor apparatus including the same, the semiconductor device including: a first electrode; a second electrode apart from the first electrode; a dielectric structure provided between the first electrode and the second electrode and including a dielectric layer including a metal oxide represented by MxOy; and a leakage current reducing layer including a metal oxide represented by Lay′M′y′Oz′.
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