公开(公告)号：US11610891B2

公开(公告)日：2023-03-21

申请号：US17725806

申请日：2022-04-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaehwan Cho ,  Junghwan Oh ,  Sangho Lee ,  Junwon Lee ,  Jinwoo Bae ,  Sunghee Han ,  Yoosang Hwang

IPC: H01L27/108

Abstract: A semiconductor device may include a bottom sub-electrode on a substrate, a top sub-electrode on the bottom sub-electrode, a dielectric layer covering the bottom and top sub-electrodes, and a plate electrode on the dielectric layer. The top sub-electrode may include a step extending from a side surface thereof, which is adjacent to the bottom sub-electrode, to an inner portion of the top sub-electrode. The top sub-electrode may include a lower portion at a level that is lower than the step and an upper portion at a level which is higher than the step. A maximum width of the lower portion may be narrower than a minimum width of the upper portion. The maximum width of the lower portion may be narrower than a width of a top end of the bottom sub-electrode. The bottom sub-electrode may include a recess in a region adjacent to the top sub-electrode.

公开(公告)号：US11322499B2

公开(公告)日：2022-05-03

申请号：US16943019

申请日：2020-07-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaehwan Cho ,  Junghwan Oh ,  Sangho Lee ,  Junwon Lee ,  Jinwoo Bae ,  Sunghee Han ,  Yoosang Hwang

IPC: H01L27/108

Abstract: A semiconductor device may include a bottom sub-electrode on a substrate, a top sub-electrode on the bottom sub-electrode, a dielectric layer covering the bottom and top sub-electrodes, and a plate electrode on the dielectric layer. The top sub-electrode may include a step extending from a side surface thereof, which is adjacent to the bottom sub-electrode, to an inner portion of the top sub-electrode. The top sub-electrode may include a lower portion at a level that is lower than the step and an upper portion at a level which is higher than the step. A maximum width of the lower portion may be narrower than a minimum width of the upper portion. The maximum width of the lower portion may be narrower than a width of a top end of the bottom sub-electrode. The bottom sub-electrode may include a recess in a region adjacent to the top sub-electrode.

公开(公告)号：US11037930B2

公开(公告)日：2021-06-15

申请号：US16670232

申请日：2019-10-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taejin Park ,  Keunnam Kim ,  Huijung Kim ,  Sohyun Park ,  Jaehwan Cho ,  Yoosang Hwang

IPC: H01L27/108

Abstract: A semiconductor device includes a substrate, a bit line structure on the substrate, a contact plug structure being adjacent to the bit line structure and extending in a vertical direction perpendicular to an upper surface of the substrate, and a capacitor electrically connected to the contact plug structure. The contact plug structure includes a lower contact plug, a metal silicide pattern, and an upper contact plug that are sequentially stacked on the substrate. The metal silicide pattern has an L-shaped cross section.