公开(公告)号：US12087810B2

公开(公告)日：2024-09-10

申请号：US17715389

申请日：2022-04-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinhong Kim ,  Changsoo Lee ,  Yongsung Kim ,  Euncheol Do ,  Jooho Lee ,  Yong-Hee Cho

IPC: H10B12/00 ,  H01L49/02

CPC classification number: H01L28/65 ,  H01L28/75 ,  H10B12/30

Abstract: A capacitor including a lower electrode; an upper electrode apart from the lower electrode; and a between the lower electrode and the upper electrode, the dielectric including a dielectric layer including TiO2, and a leakage current reducing layer including GeO2 in the dielectric layer. Due to the leakage current reducing layer, a leakage current is effectively reduced while a decrease in the dielectric constant of the dielectric thin-film is small.

公开(公告)号：US11037728B2

公开(公告)日：2021-06-15

申请号：US16223209

申请日：2018-12-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinhong Kim ,  Se Yun Kim

IPC: H01G4/10 ,  H01L49/02 ,  H01G4/008 ,  H01L29/51

Abstract: A dielectric including a composite including a metal oxide having a rocksalt crystal structure and a beryllium oxide, and a capacitor, a transistor, and an electronic device including the same.

公开(公告)号：US10917942B2

公开(公告)日：2021-02-09

申请号：US16045834

申请日：2018-07-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinhong Kim ,  Seyun Kim ,  Haengdeog Koh ,  Doyoon Kim ,  Hajin Kim ,  Soichiro Mizusaki ,  Minjong Bae ,  Changsoo Lee

IPC: H05B1/02 ,  H05B3/14 ,  H05B3/26

Abstract: Provided are a structure, a planar heater including the same, a heating device including the planar heater, and a method of preparing the structure. The structure includes a metal substrate, an insulating layer disposed on the metal substrate, an electrode layer disposed on the insulating layer, and an electrically conductive layer disposed on the electrode layer, wherein a difference in a coefficient of thermal expansion (CTE) between the metal substrate and the insulating layer is 4 parts per million per degree Kelvin change in temperature (ppm/K) or less.

公开(公告)号：US20180163969A1

公开(公告)日：2018-06-14

申请号：US15633832

申请日：2017-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changsoo Lee ,  Doyoon Kim ,  Hajin Kim ,  Haengdeog Koh ,  Seyun Kim ,  Jinhong Kim ,  Taehun Kim ,  Soichiro Mizusaki ,  Minjong Bae ,  Hiesang Sohn ,  Kunwoo Choi

IPC: F24C7/06 ,  F24C15/00 ,  A47J37/06 ,  H05B3/26

CPC classification number: F24C7/062 ,  A47J37/0629 ,  F24C7/046 ,  F24C7/067 ,  F24C15/007 ,  H05B3/08 ,  H05B3/145 ,  H05B3/26 ,  H05B3/62 ,  H05B2203/002 ,  H05B2214/02

Abstract: A planar heating apparatus includes a substrate, first electrodes on the substrate, second electrodes alternately arranged with the first electrodes, an electrode connector connecting end portions of the first or second electrodes to each other and a power connector connected to the electrode connector and to which a power supply is connected. The power connector extends outside of the substrate.

公开(公告)号：US20180099487A1

公开(公告)日：2018-04-12

申请号：US15723339

申请日：2017-10-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haengdeog Koh ,  Doyoon Kim ,  Seyun Kim ,  Jinhong Kim ,  Hajin Kim ,  Soichiro MIZUSAKI ,  Minjong Bae ,  Hiesang Sohn ,  Changsoo Lee

IPC: B32B17/10 ,  C01G55/00 ,  C03C8/02

CPC classification number: B32B17/10174 ,  B32B17/10944 ,  B82Y30/00 ,  C01G55/004 ,  C01P2002/02 ,  C01P2004/03 ,  C01P2004/50 ,  C01P2004/51 ,  C01P2004/62 ,  C01P2004/64 ,  C03C3/093 ,  C03C8/02 ,  C03C14/002 ,  C03C14/006 ,  C03C17/008 ,  C03C2214/02 ,  C03C2214/16 ,  C03C2217/452 ,  C03C2217/48

Abstract: A composite material structure including a matrix material layer; and a plurality of one-dimensional nanostructure distributed in the matrix material layer and having an electrical conductivity which is greater than an electrical conductivity of the matrix material layer, wherein the plurality of one-dimensional nanostructures includes a first one-dimensional nanostructure and a second one-dimensional nanostructure in contact with each other.

公开(公告)号：US12041697B2

公开(公告)日：2024-07-16

申请号：US16919792

申请日：2020-07-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hiesang Sohn ,  Seyun Kim ,  Haengdeog Koh ,  Doyoon Kim ,  Soichiro Mizusaki ,  Jinhong Kim ,  Hajin Kim ,  Minjong Bae ,  Changsoo Lee

IPC: H05B1/02 ,  B29C70/02 ,  B29C70/88 ,  C03C4/14 ,  C03C8/04 ,  C03C8/14 ,  C03C8/16 ,  C03C14/00 ,  C03C17/00 ,  H05B3/14 ,  H05B3/26

CPC classification number: H05B1/0263 ,  B29C70/025 ,  B29C70/88 ,  C03C4/14 ,  C03C8/04 ,  C03C8/14 ,  C03C8/16 ,  C03C14/004 ,  C03C17/007 ,  C03C17/008 ,  H05B3/14 ,  H05B3/141 ,  H05B3/146 ,  H05B3/26 ,  C03C2217/452 ,  C03C2217/48 ,  H05B2203/013

Abstract: A heating element includes a plurality of matrix particles and a conductive inorganic filler disposed at interfaces between the plurality of matrix particles to provide a conductive network.

公开(公告)号：US20240226808A1

公开(公告)日：2024-07-11

申请号：US18404664

申请日：2024-01-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mira Park ,  Heonkyu Kim ,  Kieung Lee ,  Hoigu Jang ,  Jiyoung Kim ,  Jua Ryu ,  Sojung Park ,  Mingyeong Shin ,  Jiwoong Shin ,  Jungsuk Oh ,  Taijin Yoon ,  Minseon Lee ,  Hyoyoung Lee ,  Jinhong Kim

IPC: B01D53/82 ,  B01D53/04 ,  B01J20/02 ,  B01J20/04 ,  B01J20/16 ,  B01J20/20 ,  B01J20/28 ,  B01J20/32 ,  B01J39/04 ,  B01J39/18 ,  B01J41/04 ,  B01J41/12 ,  B01J47/024 ,  B01J47/026

CPC classification number: B01D53/82 ,  B01D53/0407 ,  B01J20/0259 ,  B01J20/04 ,  B01J20/16 ,  B01J20/20 ,  B01J20/28052 ,  B01J20/3204 ,  B01J20/324 ,  B01J39/04 ,  B01J39/18 ,  B01J41/04 ,  B01J41/12 ,  B01J47/024 ,  B01J47/026 ,  B01D2253/102 ,  B01D2253/108 ,  B01D2257/2045 ,  B01D2257/2047 ,  B01D2257/302 ,  B01D2257/404 ,  B01D2257/406 ,  B01D2257/708

Abstract: A chemical filter includes a first buffer layer, at least one first filter layer disposed on the first buffer layer and including a pair of first air-permeable bodies facing each other and at least one first adsorption layer between the pair of first air-permeable bodies, and a second filter layer disposed on the first filter layer and including a pair of second air-permeable bodies facing each other and at least one second adsorption layer between the pair of second air-permeable bodies, wherein the first filter layer is configured to be attachable to and detachable from the second filter layer.

公开(公告)号：US11856873B2

公开(公告)日：2023-12-26

申请号：US17395040

申请日：2021-08-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soichiro Mizusaki ,  Doyoon Kim ,  Seyun Kim ,  Yumin Kim ,  Jinhong Kim ,  Youngjin Cho

IPC: H10N70/20 ,  H10B63/00 ,  H10N70/00

CPC classification number: H10N70/24 ,  H10B63/34 ,  H10B63/845 ,  H10N70/8833

Abstract: A variable resistance memory may include first and second conductive elements spaced apart from each other on a variable resistance layer. The variable resistance layer may include first to third oxide layers sequentially arranged in a direction perpendicular to a direction in which the first and second conductive elements are arranged. A dielectric constant of the second oxide layer may be greater than dielectric constants of the first and third oxide layers.

公开(公告)号：US11672131B2

公开(公告)日：2023-06-06

申请号：US17317154

申请日：2021-05-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yumin Kim ,  Seyun Kim ,  Jinhong Kim ,  Soichiro Mizusaki ,  Youngjin Cho

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2481 ,  H01L27/2454 ,  H01L45/06 ,  H01L45/1253 ,  H01L45/144 ,  H01L45/146 ,  H01L45/16

Abstract: A memory device may include an insulating structure including a first surface and a protrusion portion protruding from the first surface in a first direction, a recording material layer on the insulating structure and extending along a protruding surface of the protrusion portion to cover the protrusion portion and extending onto the first surface of the insulating structure, a channel layer on the recording material layer and extending along a surface of the recording material layer, a gate insulating layer on the channel layer; and a gate electrode formed on the gate insulating layer at a location facing a second surface of the insulating structure. The second surface of the insulating structure may be a protruding upper surface of the protrusion portion.

公开(公告)号：US11162687B2

公开(公告)日：2021-11-02

申请号：US15633832

申请日：2017-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changsoo Lee ,  Doyoon Kim ,  Hajin Kim ,  Haengdeog Koh ,  Seyun Kim ,  Jinhong Kim ,  Taehun Kim ,  Soichiro Mizusaki ,  Minjong Bae ,  Hiesang Sohn ,  Kunwoo Choi

IPC: F24C7/06 ,  F24C15/00 ,  A47J37/06 ,  H05B3/26 ,  H05B3/08 ,  F24C7/04 ,  H05B3/14 ,  H05B3/62

Abstract: A planar heating apparatus includes a substrate, first electrodes on the substrate, second electrodes alternately arranged with the first electrodes, an electrode connector connecting end portions of the first or second electrodes to each other and a power connector connected to the electrode connector and to which a power supply is connected. The power connector extends outside of the substrate.