公开(公告)号：US20230253320A1

公开(公告)日：2023-08-10

申请号：US18297852

申请日：2023-04-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin SHIN ,  Sangwon Kim ,  Kyung-Eun Byun ,  Hyunijae Song ,  Keunwook Shin ,  Eunkyu Lee ,  Changseok Lee ,  Yeonchoo Cho ,  Taejin Choi

IPC: H01L23/528 ,  H10B53/30

CPC classification number: H01L23/5283 ,  H10B53/30

Abstract: An interconnect structure for reducing a contact resistance, an electronic device including the same, and a method of manufacturing the interconnect structure are provided. The interconnect structure includes a semiconductor layer including a first region having a doping concentration greater than a doping concentration of the rest region of the semiconductor layer, a metal layer facing the semiconductor layer, a semi-metal layer between the semiconductor layer and the metal layer, and a conductive metal oxide layer between the semi-metal layer and the semiconductor and covering the first region.

公开(公告)号：US11572278B2

公开(公告)日：2023-02-07

申请号：US16675350

申请日：2019-11-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin Shin ,  Keunwook Shin ,  Changhyun Kim ,  Seunggeol Nam ,  Kyung-Eun Byun ,  Hyunjae Song ,  Eunkyu Lee ,  Changseok Lee ,  Alum Jung ,  Yeonchoo Cho

IPC: B32B9/00 ,  C01B32/186 ,  B82Y30/00

Abstract: A method of growing graphene includes forming a carbon monolayer on a substrate by injecting a first reaction gas into a reaction chamber, wherein the first reaction gas includes a first source including a component that is a carbon source and belongs to an electron withdrawing group, and injecting a second reaction gas including a second source into the reaction chamber, wherein the second source includes a functional group that forms a volatile structure by reacting with a component that belongs to an electron withdrawing group. Graphene may be directly grown on a surface of the substrate by repeatedly injecting the first reaction gas and the second reaction gas.

公开(公告)号：US20200350164A1

公开(公告)日：2020-11-05

申请号：US16678115

申请日：2019-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunkyu Lee ,  Kyung-Eun Byun ,  Hyunjae Song ,  Hyeonjin Shin ,  Changhyun Kim ,  Keunwook Shin ,  Changseok Lee ,  Alum Jung

IPC: H01L21/02 ,  H01L29/16 ,  H01L29/165

Abstract: Provided are a graphene structure and a method of forming the graphene structure. The graphene structure includes a substrate and graphene on a surface of the substrate. Here, a bonding region in which a material of the substrate and carbon of the graphene are covalently bonded is formed between the surface of the substrate and the graphene.

公开(公告)号：US20200035602A1

公开(公告)日：2020-01-30

申请号：US16238208

申请日：2019-01-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seunggeol Nam ,  Hyeonjin Shin ,  Keunwook Shin ,  Changhyun Kim ,  Kyung-Eun Byun ,  Hyunjae Song ,  Eunkyu Lee ,  Changseok Lee ,  Alum Jung ,  Yeonchoo Cho

IPC: H01L23/532 ,  H01L23/528 ,  H01L23/522

Abstract: An interconnect structure and an electronic device including the interconnect structure are disclosed. The interconnect structure may include a metal interconnect having a bottom surface and two opposite side surfaces surrounded by a dielectric layer, a graphene layer on the metal interconnect, and a metal bonding layer providing interface adhesion between the metal interconnect and the graphene layer. The metal bonding layer includes a metal material.

公开(公告)号：US10539868B2

公开(公告)日：2020-01-21

申请号：US15807106

申请日：2017-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin Shin ,  Hyunjae Song ,  Seongjun Park ,  Keunwook Shin ,  Changseok Lee

IPC: G03F1/64 ,  G03F1/22 ,  G03F7/20

Abstract: A pellicle for a photomask, a reticle including the same, and an exposure apparatus for lithography are provided. The pellicle may include a pellicle membrane, and the pellicle membrane may include nanocrystalline graphene. The nanocrystalline graphene may have defects. The nanocrystalline graphene may include a plurality of nanoscale crystal grains, and the nanoscale crystal grains may include a two-dimensional (2D) carbon structure having an aromatic ring structure. The defects of the nanocrystalline graphene may include at least one of an sp3 carbon atom, an oxygen atom, a nitrogen atom, or a carbon vacancy.

公开(公告)号：US09721943B2

公开(公告)日：2017-08-01

申请号：US15052290

申请日：2016-02-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changseok Lee ,  Keunwook Shin ,  Hyeonjin Shin ,  Seongjun Park ,  Hyunjae Song ,  Hyangsook Lee ,  Yeonchoo Cho

IPC: H01L23/528 ,  H01L27/06

CPC classification number: H01L27/0629 ,  H01L23/53271 ,  H01L27/101 ,  H01L27/228

Abstract: A wiring structure may include at least two conductive material layers and a two-dimensional layered material layer in an interface between the at least two conductive material layers. The two-dimensional layered material layer may include a grain expander layer which causes grain size of a conductive material layer which is on the two-dimensional layered material layer to be increased. Increased grain size may result in resistance of the second conductive material layer to be reduced. As a result, the total resistance of the wiring structure may be reduced. The two-dimensional layered material layer may contribute to reducing a total thickness of the wiring structure. Thus, a low-resistance and high-performance wiring structure without an increase in a thickness thereof may be implemented.

公开(公告)号：US12183783B2

公开(公告)日：2024-12-31

申请号：US17882169

申请日：2022-08-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Alum Jung ,  Kyung-Eun Byun ,  Keunwook Shin

IPC: H01L29/06 ,  H01L21/02

Abstract: A stacked structure may include a first material layer, a two-dimensional material layer on the first material layer, and a second material layer on the two-dimensional material layer. The two-dimensional material layer may include a plurality of holes that each expose a portion of the first material layer. The second material layer may be coupled to the first material layer through the plurality of holes.

公开(公告)号：US12131905B2

公开(公告)日：2024-10-29

申请号：US16923478

申请日：2020-07-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook Shin ,  Kyungeun Byun ,  Hyeonjin Shin ,  Soyoung Lee ,  Changseok Lee

IPC: H01L21/02 ,  C23C16/26 ,  C23C16/50 ,  H01L29/16

CPC classification number: H01L21/02527 ,  C23C16/26 ,  C23C16/50 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/0262 ,  H01L29/1606

Abstract: A graphene structure and a method of forming the graphene structure are provided. The graphene structure includes directly grown graphene that is directly grown on a surface of a substrate and has controlled surface energy.

公开(公告)号：US12103850B2

公开(公告)日：2024-10-01

申请号：US17060893

申请日：2020-10-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Van Luan Nguyen ,  Keunwook Shin ,  Hyeonjin Shin ,  Changhyun Kim ,  Changseok Lee ,  Yeonchoo Cho

IPC: B32B9/00 ,  C01B32/186

CPC classification number: C01B32/186 ,  Y10T428/30

Abstract: A method of forming graphene includes: preparing a substrate in a reaction chamber; performing a first growth process of growing a plurality of graphene aggregates apart from each other on the substrate at a first growth rate by using a reaction gas including a carbon source; and performing a second growth process of forming a graphene layer by growing the plurality of graphene aggregates at a second growth rate slower than the first growth rate by using the reaction gas including the carbon source.

公开(公告)号：US12027589B2

公开(公告)日：2024-07-02

申请号：US17087968

申请日：2020-11-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook Shin ,  Hyeonjin Shin ,  Yeonchoo Cho ,  Seunggeol Nam ,  Seongjun Park ,  Yunseong Lee

IPC: H01L29/16 ,  C01B32/186 ,  H01L21/02

CPC classification number: H01L29/1606 ,  C01B32/186 ,  H01L21/02384 ,  H01L21/02389 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02398 ,  H01L21/02488 ,  H01L21/02527 ,  H01L21/0262

Abstract: Provided is a semiconductor device including graphene. The semiconductor device includes: a substrate including an insulator and a semiconductor; and a graphene layer configured to directly grow only on a surface of the semiconductor, wherein the semiconductor includes at least one of a group IV material and a group III-V compound.