公开(公告)号：US09809887B2

公开(公告)日：2017-11-07

申请号：US15052701

申请日：2016-02-24

Applicant: Seagate Technology LLC

Inventor： Michael R. Feldbaum ,  Justin Jia-Jen Hwu ,  David S. Kuo ,  Gennady Gauzner ,  Kim Yang Lee ,  Li-Ping Wang

IPC: C23F4/00 ,  B82Y40/00 ,  B82Y10/00 ,  G03F7/00 ,  G11B5/855

CPC classification number: C23F4/00 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G11B5/855 ,  Y10T428/265

Abstract: The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.

公开(公告)号：US20160168723A1

公开(公告)日：2016-06-16

申请号：US15052701

申请日：2016-02-24

Applicant: Seagate Technology LLC

Inventor： Michael R. Feldbaum ,  Justin Jia-Jen Hwu ,  David S. Kuo ,  Gennady Gauzner ,  Kim Yang Lee ,  Li-Ping Wang

IPC: C23F4/00

CPC classification number: C23F4/00 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G11B5/855 ,  Y10T428/265

Abstract: The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.