-
公开(公告)号：US20160265119A1
公开(公告)日：2016-09-15
申请号：US15163214
申请日：2016-05-24
Applicant: Seagate Technology LLC
Inventor： Michael R. Feldbaum , Koichi Wago , Gennady Gauzner , Kim Y. Lee , David S. Kuo
CPC classification number: C23F1/00 , B29C33/3842 , B29D17/00 , B29K2101/00 , B29K2909/00 , G03F7/0002 , G03F7/0017 , G03F7/09 , G03F7/2002 , G11B5/855 , Y10T428/24802 , Y10T428/24851 , Y10T428/24917
Abstract: Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.
-
公开(公告)号：US09370907B2
公开(公告)日：2016-06-21
申请号：US14221165
申请日：2014-03-20
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： Michael R. Feldbaum , Koichi Wago , Gennady Gauzner , Kim Y. Lee , David S. Kuo
CPC classification number: C23F1/00 , B29C33/3842 , B29D17/00 , B29K2101/00 , B29K2909/00 , G03F7/0002 , G03F7/0017 , G03F7/09 , G03F7/2002 , G11B5/855 , Y10T428/24802 , Y10T428/24851 , Y10T428/24917
Abstract: Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.
Abstract translation: 本文提供了一种包括基板的装置; 覆盖衬底的蚀刻停止层，其中蚀刻停止层基本上抵抗蚀刻条件; 以及覆盖在蚀刻停止层上的图案层，其中所述图案化层对于蚀刻条件基本不稳定，并且其中所述图案化层包括多个特征，所述特征包括高特征密度区域和低特征密度区域之间的基本一致的特征轮廓。
-
公开(公告)号：US20160069929A1
公开(公告)日：2016-03-10
申请号：US14783403
申请日：2013-04-17
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： Gennady Gauzner , Zhaoning Yu , Nobuo Kurataka , David S. Kuo , Kim Y. Lee , Yautzong Hsu , Hong Ying Wang
CPC classification number: G01Q40/02 , G01N21/01 , G01N2201/13 , G01Q40/00 , G03F7/0002 , H01J37/261 , H01J37/263 , H01J2237/2602 , H01J2237/2826
Abstract: Provided herein in an apparatus, including a substrate; a functional layer, wherein the functional layer has a composition characteristic of a workpiece of an analytical apparatus; and pre-determined features configured to calibrate the analytical apparatus. Also provided herein is an apparatus, including a functional layer overlying a substrate; and pre-determined features for calibration of an analytical apparatus configured to measure the surface of a workpiece, wherein the functional layer has a composition similar to the workpiece. Also provided herein is a method, including providing a lithographic calibration standard having a functional layer to an analytical apparatus, wherein the functional layer has a composition characteristic of a workpiece of the analytical apparatus; providing calibration standard specifications to a computer interfaced with the analytical apparatus; and calibrating the analytical apparatus in accordance with calibration standard readings and the calibration standard specifications.
Abstract translation: 本文提供的装置包括基板; 功能层，其中所述功能层具有分析装置的工件的成分特征; 以及配置成校准分析装置的预定特征。 本文还提供了一种装置，包括覆盖衬底的功能层; 以及用于校准配置成测量工件表面的分析装置的预定特征，其中所述功能层具有类似于所述工件的组成。 本文还提供了一种方法，包括向分析装置提供具有功能层的光刻校准标准，其中功能层具有分析装置的工件的成分特征; 向与分析仪器连接的计算机提供校准标准规格; 并根据校准标准读数和校准标准规格校准分析仪器。
-
公开(公告)号：US20150155164A1
公开(公告)日：2015-06-04
申请号：US14612145
申请日：2015-02-02
Applicant: Seagate Technology LLC
Inventor： Zhaoning Yu , Nobuo Kurataka , Gennady Gauzner
IPC: H01L21/02 , H01L21/033 , H01L21/311
CPC classification number: G03F7/0002 , C09K13/00 , G03F7/40 , G11B5/746 , G11B5/855
Abstract: Provided herein are methods for depositing a spin-on-glass composition over an imprinted resist; curing the spin-on-glass composition to form a cured spin-on-glass composition; and forming a patterned mask by etching the cured spin-on-glass composition, the resist, and an underlying mask composition, wherein the patterned mask comprises features of the cured spin-on-glass composition atop the mask composition, and wherein curing the spin-on-glass composition is configured to prevent shifting or toppling of the spin-on glass composition from atop the mask composition while forming the patterned mask.
Abstract translation: 本文提供了在旋涂玻璃组合物上沉积抗蚀剂的方法; 固化旋涂玻璃组合物以形成固化的旋涂玻璃组合物; 并通过蚀刻固化的旋涂玻璃组合物，抗蚀剂和下面的掩模组合物来形成图案化掩模，其中图案化掩模包括固化的旋涂玻璃组合物在掩模组合物上的特征，并且其中固化旋转 玻璃组合物构造成在形成图案化掩模的同时防止旋涂玻璃组合物从掩模组合物顶部移位或倒下。
-
公开(公告)号：US09683295B2
公开(公告)日：2017-06-20
申请号：US15163214
申请日：2016-05-24
Applicant: Seagate Technology LLC
Inventor： Michael R. Feldbaum , Koichi Wago , Gennady Gauzner , Kim Y. Lee , David S. Kuo
IPC: H01L21/00 , C23F1/00 , B29C33/38 , G03F7/00 , B29D17/00 , G11B5/855 , G03F7/20 , G03F7/09 , B29K101/00
CPC classification number: C23F1/00 , B29C33/3842 , B29D17/00 , B29K2101/00 , B29K2909/00 , G03F7/0002 , G03F7/0017 , G03F7/09 , G03F7/2002 , G11B5/855 , Y10T428/24802 , Y10T428/24851 , Y10T428/24917
Abstract: Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.
-
Patent Agency Ranking
公开(公告)号：US09610712B2
公开(公告)日：2017-04-04
申请号：US15044962
申请日：2016-02-16
Applicant: Seagate Technology LLC
Inventor： Sang-Min Park , Nobuo Kurataka , Gennady Gauzner
IPC: B05D3/10 , B05D3/12 , B82Y40/00 , B29C33/62 , G03F7/00 , B82Y10/00 , B29C59/02 , B29L9/00 , B29L31/00
CPC classification number: B05D3/12 , B05D1/26 , B05D3/10 , B29C33/62 , B29C59/022 , B29C59/026 , B29C2059/023 , B29K2883/00 , B29K2909/14 , B29L2009/005 , B29L2031/756 , B82Y10/00 , B82Y40/00 , G03F7/0002 , Y10T428/24802
Abstract: The embodiments disclose a method of surface tension control to reduce trapped gas bubbles in an imprint including modifying chemistry aspects of interfacial surfaces of an imprint template and a substrate to modify surface tensions, differentiating the interfacial surface tensions to control interfacial flow rates of a pre-cured liquid resist and controlling pre-cured liquid resist interfacial flow rates to reduce trapping gas and prevent trapped gas bubble defects in cured imprinted resist.
-
公开(公告)号：US09605348B2
公开(公告)日：2017-03-28
申请号：US15161097
申请日：2016-05-20
Applicant: Seagate Technology LLC
Inventor： Michael R. Feldbaum , Koichi Wago , Gennady Gauzner , Kim Y. Lee , David S. Kuo
IPC: H01L21/00 , C23F1/00 , B29C33/38 , G03F7/00 , B29D17/00 , G11B5/855 , G03F7/20 , G03F7/09 , B29K101/00
CPC classification number: C23F1/00 , B29C33/3842 , B29D17/00 , B29K2101/00 , B29K2909/00 , G03F7/0002 , G03F7/0017 , G03F7/09 , G03F7/2002 , G11B5/855 , Y10T428/24802 , Y10T428/24851 , Y10T428/24917
Abstract: Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.
-
公开(公告)号：US20160158972A1
公开(公告)日：2016-06-09
申请号：US15044962
申请日：2016-02-16
Applicant: Seagate Technology LLC
Inventor： Sang-Min Park , Nobuo Kurataka , Gennady Gauzner
CPC classification number: B05D3/12 , B05D1/26 , B05D3/10 , B29C33/62 , B29C59/022 , B29C59/026 , B29C2059/023 , B29K2883/00 , B29K2909/14 , B29L2009/005 , B29L2031/756 , B82Y10/00 , B82Y40/00 , G03F7/0002 , Y10T428/24802
Abstract: The embodiments disclose a method of surface tension control to reduce trapped gas bubbles in an imprint including modifying chemistry aspects of interfacial surfaces of an imprint template and a substrate to modify surface tensions, differentiating the interfacial surface tensions to control interfacial flow rates of a pre-cured liquid resist and controlling pre-cured liquid resist interfacial flow rates to reduce trapping gas and prevent trapped gas bubble defects in cured imprinted resist.
-
公开(公告)号：US09348219B2
公开(公告)日：2016-05-24
申请号：US14612145
申请日：2015-02-02
Applicant: Seagate Technology LLC
Inventor： Zhaoning Yu , Nobuo Kurataka , Gennady Gauzner
CPC classification number: G03F7/0002 , C09K13/00 , G03F7/40 , G11B5/746 , G11B5/855
Abstract: Provided herein are methods for depositing a spin-on-glass composition over an imprinted resist; curing the spin-on-glass composition to form a cured spin-on-glass composition; and forming a patterned mask by etching the cured spin-on-glass composition, the resist, and an underlying mask composition, wherein the patterned mask comprises features of the cured spin-on-glass composition atop the mask composition, and wherein curing the spin-on-glass composition is configured to prevent shifting or toppling of the spin-on glass composition from atop the mask composition while forming the patterned mask.
Abstract translation: 本文提供了在旋涂玻璃组合物上沉积抗蚀剂的方法; 固化旋涂玻璃组合物以形成固化的旋涂玻璃组合物; 并通过蚀刻固化的旋涂玻璃组合物，抗蚀剂和下面的掩模组合物来形成图案化掩模，其中图案化掩模包括固化的旋涂玻璃组合物在掩模组合物上的特征，并且其中固化旋转 玻璃组合物构造成在形成图案化掩模的同时防止旋涂玻璃组合物从掩模组合物顶部移位或倒下。
-
10.发明申请BIT PATTERNED MEDIA TEMPLATE INCLUDING ALIGNMENT MARK AND METHOD OF USING SAME 有权位图形媒体模板，包括对齐标记及其使用方法公开(公告)号：US20150116690A1
公开(公告)日：2015-04-30
申请号：US14068050
申请日：2013-10-31
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： HongYing Wang , Kim Y Lee , Yautzong Hsu , Nobuo Kurataka , Gennady Gauzner , Shuaigang Xiao
CPC classification number: G03F7/70141 , G03F7/0002 , G03F9/7042 , G03F9/7076 , G11B5/855
Abstract: A method is disclosed that includes forming at least one substrate alignment mark and at least one lithography alignment mark in a substrate; forming a seed layer on the substrate; and forming a guide pattern and at least one guide pattern alignment mark in the seed layer, where the at least one guide pattern alignment mark is formed over the at least one substrate alignment mark. The method further includes determining an alignment error of the at least one guide pattern alignment mark relative to the at least one substrate alignment mark; and patterning features on at least one region of the substrate, where the features are positioned on the substrate based on the at least one lithography alignment mark and the alignment error.
Abstract translation: 公开了一种方法，其包括在衬底中形成至少一个衬底对准标记和至少一个光刻对准标记; 在所述基板上形成种子层; 以及在所述种子层中形成引导图案和至少一个引导图案对准标记，其中所述至少一个引导图案对准标记形成在所述至少一个基板对准标记上。 所述方法还包括确定所述至少一个引导图案对准标记相对于所述至少一个基板对准标记的对准误差; 以及在所述基板的至少一个区域上构图特征，其中所述特征基于所述至少一个光刻对准标记和所述对准误差位于所述基板上。
-
-
-
-
-
-
-
-
-
Search Results
20
records
(took 0.025 seconds)
