公开(公告)号：US09460747B2

公开(公告)日：2016-10-04

申请号：US14830534

申请日：2015-08-19

Applicant: Seagate Technology LLC

Inventor： Yuan Xu ,  Kim Y. Lee ,  David S. Kuo ,  Koichi Wago ,  Wei Hu

IPC: G11B5/84 ,  G11B5/74 ,  G11B5/855

CPC classification number: G11B5/84 ,  G11B5/746 ,  G11B5/855 ,  Y10T428/24479 ,  Y10T428/24802

Abstract: A method for nano-patterning includes imprinting features in a resist with an imprint mold to form one or more topographic surface patterns on the imprinted resist. A block copolymer (“BCP”) material is deposited on the imprinted resist, wherein a molecular dimension L0 of the BCP material correlates by an integer multiple to a spacing dimension of the one or more topographic surface patterns on the imprinted resist. The deposited BCP is annealed and at least a portion of the annealed BCP is removed, forming a template having discrete domains.

Abstract translation: 纳米图案的方法包括在抗蚀剂中用压印模具压印特征以在印刷抗蚀剂上形成一个或多个形貌表面图案。 在印刷抗蚀剂上沉积嵌段共聚物（“BCP”）材料，其中BCP材料的分子尺寸L0与印迹抗蚀剂上的一个或多个形貌表面图案的间隔尺寸相关联。 将沉积的BCP退火，并且去除退火的BCP的至少一部分，形成具有离散区域的模板。

公开(公告)号：US20150118625A1

公开(公告)日：2015-04-30

申请号：US14588865

申请日：2015-01-02

Applicant: Seagate Technology LLC

Inventor： XiaoMin Yang ,  Zhaoning Yu ,  Kim Yang Lee ,  Michael Feldbaum ,  Yautzong Hsu ,  Wei Hu ,  Shuaigang Xiao ,  Henry Yang ,  HongYing Wang ,  Rene Johannes Marinus van de Veerdonk ,  David Kuo

IPC: G11B5/855 ,  C23F4/00 ,  G03F7/20 ,  B05D1/00

CPC classification number: G11B5/855 ,  B05D1/005 ,  B32B3/30 ,  B32B27/283 ,  B32B27/302 ,  B32B27/308 ,  B32B27/36 ,  B32B2457/14 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y40/00 ,  C23F4/00 ,  G03F7/0002 ,  G03F7/0035 ,  G03F7/165 ,  G03F7/2022 ,  G03F7/203 ,  G03F7/2059 ,  G03F7/40 ,  H01L21/02112 ,  H01L21/0274 ,  H01L21/3065 ,  Y10T428/24612

Abstract: Provided herein is a method, including a) transferring an initial pattern of an initial template to a substrate; b) performing block copolymer self-assembly over the substrate with a density multiplication factor k; c) creating a subsequent pattern in a subsequent template with the density multiplication factor k; and d) repeating steps a)-c) with the subsequent template as the initial template until a design specification for the subsequent pattern with respect to pattern density and pattern resolution is met.

Abstract translation: 本文提供了一种方法，包括：a）将初始模板的初始图案转移到衬底; b）以密度倍增因子k在衬底上进行嵌段共聚物自组装; c）使用密度倍增因子k在后续模板中创建后续模式; 和d）重复步骤a）-c），随后的模板作为初始模板，直到满足关于模式密度和模式分辨率的后续模式的设计规范。

公开(公告)号：US20150356989A1

公开(公告)日：2015-12-10

申请号：US14830534

申请日：2015-08-19

Applicant: Seagate Technology LLC

Inventor： Yuan Xu ,  Kim Y. Lee ,  David S. Kuo ,  Koichi Wago ,  Wei Hu

IPC: G11B5/84

CPC classification number: G11B5/84 ,  G11B5/746 ,  G11B5/855 ,  Y10T428/24479 ,  Y10T428/24802

Abstract: A method for nano-patterning includes imprinting features in a resist with an imprint mold to form one or more topographic surface patterns on the imprinted resist. A block copolymer (“BCP”) material is deposited on the imprinted resist, wherein a molecular dimension L0 of the BCP material correlates by an integer multiple to a spacing dimension of the one or more topographic surface patterns on the imprinted resist. The deposited BCP is annealed and at least a portion of the annealed BCP is removed, forming a template having discrete domains.

Abstract translation: 纳米图案的方法包括在抗蚀剂中用压印模具压印特征以在印刷抗蚀剂上形成一个或多个形貌表面图案。 在印刷抗蚀剂上沉积嵌段共聚物（“BCP”）材料，其中BCP材料的分子尺寸L0与印迹抗蚀剂上的一个或多个形貌表面图案的间隔尺寸相关联。 将沉积的BCP退火，并且去除退火的BCP的至少一部分，形成具有离散区域的模板。

公开(公告)号：US09626996B2

公开(公告)日：2017-04-18

申请号：US14588865

申请日：2015-01-02

Applicant: Seagate Technology LLC

Inventor： XiaoMin Yang ,  Zhaoning Yu ,  Kim Yang Lee ,  Michael Feldbaum ,  Yautzong Hsu ,  Wei Hu ,  Shuaigang Xiao ,  Henry Yang ,  HongYing Wang ,  Rene Johannes Marinus van de Veerdonk ,  David Kuo

IPC: G03F7/004 ,  G11B5/855 ,  H01L21/3065 ,  G03F7/40 ,  H01L21/027 ,  G03F7/20 ,  H01L21/02 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/00 ,  B81C1/00 ,  B32B27/36 ,  B32B27/28 ,  B32B27/30 ,  B32B3/30 ,  G03F7/16 ,  B05D1/00 ,  C23F4/00

CPC classification number: G11B5/855 ,  B05D1/005 ,  B32B3/30 ,  B32B27/283 ,  B32B27/302 ,  B32B27/308 ,  B32B27/36 ,  B32B2457/14 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y40/00 ,  C23F4/00 ,  G03F7/0002 ,  G03F7/0035 ,  G03F7/165 ,  G03F7/2022 ,  G03F7/203 ,  G03F7/2059 ,  G03F7/40 ,  H01L21/02112 ,  H01L21/0274 ,  H01L21/3065 ,  Y10T428/24612

Abstract: Provided herein is a method, including a) transferring an initial pattern of an initial template to a substrate; b) performing block copolymer self-assembly over the substrate with a density multiplication factor k; c) creating a subsequent pattern in a subsequent template with the density multiplication factor k; and d) repeating steps a)-c) with the subsequent template as the initial template until a design specification for the subsequent pattern with respect to pattern density and pattern resolution is met.