公开(公告)号：US12106973B2

公开(公告)日：2024-10-01

申请号：US17513037

申请日：2021-10-28

Applicant: Silicon Laboratories Inc.

Inventor： Erwin Hendarto

IPC: H01L21/56 ,  B23K26/362 ,  B23K101/40 ,  H01L21/67 ,  H01L23/00 ,  H01L23/31 ,  H01L23/552

CPC classification number: H01L21/565 ,  B23K26/362 ,  H01L21/67075 ,  H01L23/3157 ,  H01L23/552 ,  H01L24/49 ,  B23K2101/40 ,  H01L2924/01047 ,  H01L2924/18165

Abstract: In one embodiment, a method includes: laser ablating an encapsulant of a semiconductor package, until a threshold amount of the encapsulant remains above one or more die of the semiconductor package; and providing at least one drop of acid onto a surface of the ablated semiconductor package to acid etch for a first time duration, to remove a remaining portion of the encapsulant above the one or more die, where after the acid etch, a die of interest is exposed and the silver bond wires of the semiconductor package are preserved.

公开(公告)号：US20230138508A1

公开(公告)日：2023-05-04

申请号：US17513037

申请日：2021-10-28

Applicant: Silicon Laboratories Inc.

Inventor： Erwin Hendarto

IPC: H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/552 ,  H01L21/67 ,  B23K26/362

Abstract: In one embodiment, a method includes: laser ablating an encapsulant of a semiconductor package, until a threshold amount of the encapsulant remains above one or more die of the semiconductor package; and providing at least one drop of acid onto a surface of the ablated semiconductor package to acid etch for a first time duration, to remove a remaining portion of the encapsulant above the one or more die, where after the acid etch, a die of interest is exposed and the silver bond wires of the semiconductor package are preserved.