公开(公告)号：US09627424B2

公开(公告)日：2017-04-18

申请号：US14547761

申请日：2014-11-19

Applicant: Silicon Laboratories Inc.

Inventor： Jefferson L. Gokingco ,  Moshe M. Altmejd

IPC: G01J3/50 ,  H01L27/146 ,  H01L31/16

CPC classification number: H01L27/14621 ,  G01J1/0433 ,  G01J1/0488 ,  G01J1/4204 ,  G01J3/513 ,  G01J5/602 ,  G01S7/4813 ,  G01S17/026 ,  H01L27/14647 ,  H01L31/02162 ,  H01L31/1013 ,  H01L31/165

Abstract: Ambient light sensing and proximity sensing is accomplished using pairs of stacked photodiodes. Each pair includes a shallow diode with a shallow junction depth that is more sensitive to light having a shorter wavelength and a deeper diode with a deeper junction depth more sensitive to light with longer wavelengths. Photodiodes receiving light passed through cyan, yellow, and magenta filters and light passed without a color filter are used to generate red, green, and blue information through a subtractive approach. The shallow diodes are used to generate lux values for ambient light and the deeper diodes are used for proximity sensing. One or more of the deep diodes may be used in correction to lux determinations of ambient light.

公开(公告)号：US20160141322A1

公开(公告)日：2016-05-19

申请号：US14547761

申请日：2014-11-19

Applicant: Silicon Laboratories Inc.

Inventor： Jefferson L. Gokingco ,  Moshe M. Altmejd

IPC: H01L27/146 ,  H01L31/16

CPC classification number: H01L27/14621 ,  G01J1/0433 ,  G01J1/0488 ,  G01J1/4204 ,  G01J3/513 ,  G01J5/602 ,  G01S7/4813 ,  G01S17/026 ,  H01L27/14647 ,  H01L31/02162 ,  H01L31/1013 ,  H01L31/165

Abstract: Ambient light sensing and proximity sensing is accomplished using pairs of stacked photodiodes. Each pair includes a shallow diode with a shallow junction depth that is more sensitive to light having a shorter wavelength and a deeper diode with a deeper junction depth more sensitive to light with longer wavelengths. Photodiodes receiving light passed through cyan, yellow, and magenta filters and light passed without a color filter are used to generate red, green, and blue information through a subtractive approach. The shallow diodes are used to generate lux values for ambient light and the deeper diodes are used for proximity sensing. One or more of the deep diodes may be used in correction to lux determinations of ambient light.

Abstract translation: 使用成对的堆叠光电二极管实现环境光感测和接近感测。 每对都包括一个浅结二极管，其浅结点深度对于具有较短波长的光更敏感，而较深的二极管具有对较长波长的光更敏感的较深的结深度。 通过青色，黄色和品红色滤光片的光二极管和通过无滤色器的光被用于通过减法方法产生红色，绿色和蓝色信息。 浅二极管用于产生环境光的勒克斯值，深二极管用于接近感测。 一个或多个深二极管可以用于校正环境光的勒克斯确定。

公开(公告)号：US20140374600A1

公开(公告)日：2014-12-25

申请号：US14307582

申请日：2014-06-18

Applicant: Silicon Laboratories Inc.

Inventor： Jefferson L. Gokingco ,  Moshe M. Altmejd ,  Colin M. Tompkins

IPC: G01J3/02

CPC classification number: G01J1/0295 ,  G01J1/0488 ,  G01J1/16 ,  G01J1/4228 ,  G01J1/429 ,  G01J2001/1663

Abstract: An ultraviolet radiation sensor includes an ultraviolet pass filter. A first photodiode senses light passing through the ultraviolet pass filter and provides an indication of ultraviolet light. A second photodiode provides an indication of infrared radiation. A correction circuit corrects the indication of ultraviolet light sensed by the first photodiode using the indication of infrared to account for infrared radiation that passes through the ultraviolet pass filter. Additional photodiodes may be used to correct for leakage current in the first and second photodiodes and stray infrared radiation that may affect the output of the first and second photodiodes.

Abstract translation: 紫外线辐射传感器包括紫外线通过滤光器。 第一光电二极管感测通过紫外线通过滤光器的光并提供紫外光的指示。 第二光电二极管提供红外辐射的指示。 校正电路使用红外线的指示来校正由第一光电二极管感测的紫外光的指示，以考虑穿过紫外线通过滤光器的红外辐射。 可以使用附加的光电二极管来校正可能影响第一和第二光电二极管输出的第一和第二光电二极管和杂散红外辐射中的漏电流。