公开(公告)号：US09887230B2

公开(公告)日：2018-02-06

申请号：US14430727

申请日：2013-09-24

Applicant: SiliconFile Technologies Inc.

Inventor： Jae Won Eom

IPC: H01L27/146 ,  H01L27/148

CPC classification number: H01L27/14643 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/148 ,  H04N5/3745 ,  H04N5/37457

Abstract: The present invention introduces a separation type unit pixel of an image sensor having a three-dimensional (3D) structure, which is capable of maximizing transmission efficient of a charge generated through a photodiode to a floating diffusion area. The separation type unit pixel may include a first wafer on which a photodiode and a transmission transistor are formed and a second wafer on which a reset transistor and a source follower transistor are formed. In particular, the photodiode has a positive region to which an N_ground voltage is applied, the N_ground voltage having a lower voltage level than a ground voltage used in the second wafer.

公开(公告)号：US20150236065A1

公开(公告)日：2015-08-20

申请号：US14430727

申请日：2013-09-24

Applicant: SILICONFILE TECHNOLOGIES INC.

Inventor： Jae Won Eom

IPC: H01L27/146 ,  H01L27/148

CPC classification number: H01L27/14643 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/148 ,  H04N5/3745 ,  H04N5/37457

Abstract: The present invention introduces a separation type unit pixel of an image sensor having a three-dimensional (3D) structure, which is capable of maximizing transmission efficient of a charge generated through a photodiode to a floating diffusion area. The separation type unit pixel may include a first wafer on which a photodiode and a transmission transistor are formed and a second wafer on which a reset transistor and a source follower transistor are formed. In particular, the photodiode has a positive region to which an N_ground voltage is applied, the N_ground voltage having a lower voltage level than a ground voltage used in the second wafer.

Abstract translation: 本发明引入具有三维（3D）结构的图像传感器的分离型单元像素，其能够使通过光电二极管产生的电荷的透射效率最大化到浮动扩散区域。 分离型单位像素可以包括其上形成有光电二极管和透射晶体管的第一晶片和形成复位晶体管和源极跟随器晶体管的第二晶片。 特别地，光电二极管具有施加N_接地电压的正区域，N接地电压具有比在第二晶片中使用的接地电压更低的电压电平。