公开(公告)号：EP2251718A1

公开(公告)日：2010-11-17

申请号：EP10162292.6

申请日：2010-05-07

Applicant: SiliconFile Technologies Inc.

Inventor： Lee, Byoung Su ,  Kim, Shin ,  Lee, Sang Shin ,  Yoon, Yeo Taek

IPC: G02B5/18 ,  G02B5/20 ,  H01L27/146

CPC classification number: G02B5/201 ,  B82Y20/00 ,  G02B5/1809 ,  H01L27/14621 ,  H01L31/02165

Abstract: Disclosed is a metal optical filter capable of a photo-lithography process and an image sensor including the same, and more particularly, a metal optical filter capable of a photo-lithography process, which can quite freely adjust the transmission band and transmittance thereof, even with a small number of metal layers, and simultaneously, can be actually applied in a CMOS process because it is possible to achieve nanoscale patterning by the photo-lithography process, and an image sensor including the metal optical filter. The metal optical filter capable of a photo-lithography process includes a plurality of metal rods arranged in parallel with each other at an equal nanoscale interval; and an insulation material formed between the plurality of metal rods and on upper and lower surfaces of the plurality of metal rods, wherein the metal rod is formed to comprise an upper Ti layer, an Al layer, and a lower TiN layer.

Abstract translation: 公开了一种能够进行光刻工艺的金属光学滤光器和包括该光刻工艺的图像传感器，更具体地，涉及一种能够相当自由地调节透射带和透射率的光刻工艺的金属滤光器，甚至 具有少量金属层，并且同时可以实际应用于CMOS工艺，因为可以通过光刻工艺实现纳米级图案化，以及包括金属滤光器的图像传感器。 能够进行光刻工艺的金属光学滤光器包括以相等的纳米间隔彼此平行布置的多个金属棒; 以及形成在所述多个金属棒之间以及所述多个金属棒的上表面和下表面上的绝缘材料，其中所述金属棒形成为包括上Ti层，Al层和下TiN层。