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公开(公告)号：DE3335372A1
公开(公告)日：1984-07-12
申请号：DE3335372
申请日：1983-09-29
Applicant: SONY CORP
Inventor： SAKAMOTO MASAMICHI
Abstract: A semiconductor laser device having a light emission region of a stripe pattern formed on a flat active layer, a portion carrying out a refractive index-guiding function formed on the light end portion of the light emission region and a portion carrying out a gain-guiding function formed inside the end portion of the light emission region.
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公开(公告)号：FR2534078B1
公开(公告)日：1987-11-13
申请号：FR8315256
申请日：1983-09-26
Applicant: SONY CORP
Inventor： SAKAMOTO MASAMICHI
Abstract: A semiconductor laser device having a light emission region of a stripe pattern formed on a flat active layer, a portion carrying out a refractive index-guiding function formed on the light end portion of the light emission region and a portion carrying out a gain-guiding function formed inside the end portion of the light emission region.
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公开(公告)号：CA1239464A
公开(公告)日：1988-07-19
申请号：CA437553
申请日：1983-09-26
Applicant: SONY CORP
Inventor： SAKAMOTO MASAMICHI
Abstract: A semiconductor laser device having a light emission region of a stripe pattern wormed in a flat active layer, a portion carrying out p refractive index-guiding function formed in the light end portion of the light emission region and a portion carrying out a gain-guiding function formed inside the end portion of the light emission region.
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公开(公告)号：GB2129212A
公开(公告)日：1984-05-10
申请号：GB8326054
申请日：1983-09-29
Applicant: SONY CORP
Inventor： SAKAMOTO MASAMICHI
Abstract: A semiconductor laser device having a light emission region of a stripe pattern formed on a flat active layer, a portion carrying out a refractive index-guiding function formed on the light end portion of the light emission region and a portion carrying out a gain-guiding function formed inside the end portion of the light emission region.
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公开(公告)号：GB2129212B
公开(公告)日：1986-07-16
申请号：GB8326054
申请日：1983-09-29
Applicant: SONY CORP
Inventor： SAKAMOTO MASAMICHI
Abstract: A semiconductor laser device having a light emission region of a stripe pattern formed on a flat active layer, a portion carrying out a refractive index-guiding function formed on the light end portion of the light emission region and a portion carrying out a gain-guiding function formed inside the end portion of the light emission region.
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Patent Agency Ranking
公开(公告)号：FR2534078A1
公开(公告)日：1984-04-06
申请号：FR8315256
申请日：1983-09-26
Applicant: SONY CORP
Inventor： SAKAMOTO MASAMICHI
Abstract: A semiconductor laser device having a light emission region of a stripe pattern formed on a flat active layer, a portion carrying out a refractive index-guiding function formed on the light end portion of the light emission region and a portion carrying out a gain-guiding function formed inside the end portion of the light emission region.
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公开(公告)号：JPS61258490A
公开(公告)日：1986-11-15
申请号：JP10002885
申请日：1985-05-11
Applicant: SONY CORP
Inventor： SAKAMOTO MASAMICHI
Abstract: PURPOSE:To prevent the production of pin holes or the like and the generation of strain due to change of lattice parameters, by growing single crystal ZnSe for providing end-face protecting films on the resonance faces of a semiconductor laser consisting of InGaAlP and InGaAsP layers. CONSTITUTION:An N-type InGaAlP layer 3 as first clad layer, an undoped InGaAlP layer 4 as active layer, a P-type InGaAlP layer 5 as second layer and a P-type GaAs layer 5' as cap layer are provided on an N -GaAs crystal substrate 2, sequentially in that order. An oxide film 6 is further provided thereon, and a metallic layer 7 to be an upper electrode and a metallic layer 1 to be a lower electrode are provided so as to entirely cover the top and bottom faces. The wafer is cleaved to produce stripe-shaped substrates. Single crystal ZnSe is grown on the side faces of each substrate so as to form end-face protecting films 8. According to this method, the interface between the semiconductor laser and the end-face protecting film is allowed to have improved crystallizability, and hence no water or oxygen is adsorbed or transmitted therethrough, and the cleaved surface is prevented from being damaged, corroded or oxidized.
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公开(公告)号：JPS6151889A
公开(公告)日：1986-03-14
申请号：JP17359484
申请日：1984-08-21
Applicant: Sony Corp
Inventor： OKADA TSUNEICHI , SAKAMOTO MASAMICHI
IPC: H01S5/00
Abstract: PURPOSE: To obtain both an index guide type semiconductor laser and a gain guide type semiconductor laser positively while arbitrarily designing a semiconductor laser, to which both guide functions are formed partially, or a semiconductor laser having an intermediate function or the like easily by each shaping an optical absorption function and a current constriction function by different layers.
CONSTITUTION: A first clad layer 12 consisting of Al
z Ga
1-z As having the same conduction type as an N type GaAs semiconductor substrate 11, a P type or N type active layer 13 composed of Al
x Ga
1-x As on the clad layer 12, a second clad layer 14 consisting of Al
z Ga
1-z As having a conduction type different from the first clad layer such as a P type on the active layer 13, and a cap layer 16 composed of a high-concentration GaAs layer having the same conduction type as the clad layer 14 such as the P type are formed onto the substrate 11. An optical absorption layer 21 consisting of Al
y Ga
1-y As having the same conduction type as the second clad layer such as the P type on the side, particularly, the side facing the active layer 13, and a current constriction layer 22 composed of Al
i Ga
1-i As having a conduction type different from the second clad layer 14 such as the P type on the side reverse to the side facing the active layer 13 on the layer 21 are laminated and shaped in the second clad layer 14.
COPYRIGHT: (C)1986,JPO&JapioAbstract translation: 目的：为了在任意设计半导体功能部分地形成两个导向功能的半导体激光器或具有中间功能的半导体激光器等中容易地通过每个成形容易地获得引导型半导体激光器和增益引导型半导体激光器两者 光吸收功能和不同层的电流收缩功能。 构成：由具有与N型GaAs半导体衬底11相同的导电类型的AlzGa1-zAs组成的第一覆盖层12，在包覆层12上由Al x Ga 1-x As构成的P型或N型有源层13，第二覆盖层 14由具有不同于有源层13上的P型的第一包层的导电类型的AlzGa1-z以及由与包层14相同的导电类型的高浓度GaAs层构成的覆盖层16 例如P型形成在基板11上。由具有与第二覆盖层相同的导电类型的Al y Ga 1-y As如侧面的P型，特别是面向有源层13的一侧构成的光吸收层21 并且在层21上与面向有源层13的一侧相反的一侧上的P型具有不同于第二覆盖层14的导电类型的AliGa1-iAs的电流收缩层22被层叠并成形为 第二包层 14。
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公开(公告)号：JPS5715477A
公开(公告)日：1982-01-26
申请号：JP9018680
申请日：1980-07-02
Applicant: SONY CORP
Inventor： SAKAMOTO MASAMICHI
IPC: H01L21/339 , H01L27/148 , H01L29/762 , H04N5/335 , H04N5/359 , H04N5/369 , H04N5/372
Abstract: PURPOSE:To improve the resolution of a solid state image pickup element by forming by a self-alignment an overflow drain region, an overflow control gate region and a channel stopper region and integrating picture elements as many as possible in a limited area. CONSTITUTION:An extremely thin SiO2 film 22 and an ordinarily thick photoresist layer 23 are laminated and covered on a P type Si substrate 1, and windows 24, 25 corresponding to an overflow control gate region 4 and a channel stopper region 5 to be formed later are opened. Then, P type impurity ions are injected, P type regions 4, 5 are formed on the surface layer of the substrate 1 exposed in the windows 24, 25, only the layer 23 is removed, with the remaining film 22 as a mask a high temperature nitriding treatment is performed, and thick SiO2 film 26 is formed on the regions 4, 5. Thereafter, the film 22 is modified to an SiO2 film 27, the overall surface is covered with a photoresist layer 28, a window 29 is opened, and an N type overflow drain region 2 is formed in the substrate 1 between the regions 4 and 5 by N type ion injection.
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公开(公告)号：JPH0680859B2
公开(公告)日：1994-10-12
申请号：JP28159084
申请日：1984-12-27
Applicant: SONY CORP
Inventor： SAKAMOTO MASAMICHI
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