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公开(公告)号：JPH0685455B2
公开(公告)日：1994-10-26
申请号：JP14923984
申请日：1984-07-18
Applicant: SONY CORP
Inventor： MAMINE TAKAYOSHI , OKADA TSUNEICHI , CHIBA MICHIRO
Abstract: A semiconductor laser comprises a substrate (31) in which there are formed, in turn, a first cladding layer (32), an active layer (33), a second cladding layer (34) and a light absorbing layer (35) for limiting a current path and for absorbing light emitted from the active layer (33). The light absorbing layer (35) is provided with a stripe-shaped removed portion (35a) for forming the current path. The width (W) of the removed portion (35a) is selected to be in a range of from 1 to 4 microns, the thickness (d1) of the active layer (33) is selected to be not less than approximately 500 Angstroms, and the distance (d2) between the active layer (33) and the light absorbing layer (35) is selected to be in a range of from 0.2 to 0.7 microns.
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公开(公告)号：JPH05290334A
公开(公告)日：1993-11-05
申请号：JP11840192
申请日：1992-04-11
Applicant: SONY CORP
Inventor： OKADA TSUNEICHI , ONO KOICHI
Abstract: PURPOSE:To improve counting accuracy by allowing a first memory means to store the lower column which has less importance among counting data weighted, and allowing a second memory means of non-volatile to store the upper column which has considerable importance, and updating the first and the second means respectively whenever updating and carrying of the lower column occur. CONSTITUTION:The lower column which has less importance among counting data weighted is stored in the first memory means 4, while the upper column which has considerable importance among counting data weighted is stored in the second memory means 8 consisting of non-volatile memories. Thus, the first means 4 is updated in every update of the lower column of counting data, while the second means 8 is updated in every carrying of the lower column. That is, counting data is counted with high accuracy in the first means 4, and the upper column having considerable importance among counting data is surely held in the second means 8.
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公开(公告)号：JPH09180414A
公开(公告)日：1997-07-11
申请号：JP34143195
申请日：1995-12-27
Applicant: SONY CORP
Inventor： OKADA TSUNEICHI , ONO KOICHI
IPC: G11B27/28
Abstract: PROBLEM TO BE SOLVED: To keep the continuity of time-count output when using an operation power supply and a backup power supply by switching. SOLUTION: A time code generating device comprises an external reference signal generation part 20, a counter part 30 which receives an external reference signal and generates time-count output, a time code generation part 50 which receives the time-count output, and a power supply part 60. The count part 20 is provided with an internal clock 44 which becomes an internal reference signal, a counter means 32... for generating count output, switching means 40 and 42 for switching internal and external reference signals, and a control part 48 for controlling them. When switching an operation power supply and a backup power supply, the external and internal reference signals are switched for the change timing of the internal reference signal, thus maintaining the continuity of time-count output when switching power supplies.
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公开(公告)号：JPH05244123A
公开(公告)日：1993-09-21
申请号：JP4366592
申请日：1992-02-28
Applicant: SONY CORP
Inventor： OKADA TSUNEICHI
Abstract: PURPOSE:To execute a bidirectional data communication by such a simple cable as used conventionally in unidirectional data communication. CONSTITUTION:For instance, in the case editing of a VTR is executed by an editing machine, command data sent out of the editing machine is converted to a byte unit, and also, sent out by a 3-byte unit. Also, an index is added to the head of each data. This index is added three times to a first bit of a first byte, and added once to a second and an eighth bits, respectively. Moreover, the index is added twice first bits of a second and a third bytes, and added once to a second and an eighth bits. Status data sent out of the VTR is also the same as the command data, but becomes a signal whose 'high' and 'low' are inverted. In such a way, a bidirectional communication can be executed by two pieces of cables for the command data and for the status data.
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公开(公告)号：JPS61183987A
公开(公告)日：1986-08-16
申请号：JP2298985
申请日：1985-02-08
Applicant: SONY CORP
Inventor： MORI YOSHIFUMI , OKADA TSUNEICHI
Abstract: PURPOSE:To obtain the title device of uniform characteristics with good reproducibility and high yield, by a method wherein this device is constructed in BH refractive index type by enclosing an active layer with the first and second clad layers. CONSTITUTION:Above one main surface of a compound semiconductor substrate 1 having a 100 crystal face in the main surface and an uneven plane in this main surface, the first clad layer 2 of the first conductivity type, an optical waveguide layer 3, an undoped active layer 4, the second clad layer 5 of the second clad conductivity type, a cap layer 6 of the same conductivity type as that thereof are epitaxially grown in succession. It is contrived that the presence of the unevenness of the substrate 1 enables a side wall slope 2a of the (111)B crystal face to generate on both sides of a mesa, so as to sandwich it, by extension along the extending direction of this stripe mesa. An auxiliary current stricture layer 7 is partly provided with a lack 7a, and this stricture layer 7 is coated with one electrode 8 by including the inside of the lack 7. Then, this electrode 8 is joined to the cap layer 6 in an ohmic manner through the lack 7.
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Patent Agency Ranking
公开(公告)号：JPH11126461A
公开(公告)日：1999-05-11
申请号：JP28952497
申请日：1997-10-22
Applicant: SONY CORP
Inventor： OKADA TSUNEICHI , ONO KOICHI , NAGASAWA FUMIHIRO
IPC: G11B27/00
Abstract: PROBLEM TO BE SOLVED: To provide a video editing device and its backup quality guarantee method in which backup quality can be guaranteed at the time of locking-up of the edition state for another recording and reproducing device and a video editing device and its information taking quality guarantee method by which information taking quality can be guaranteed when video information and the like are taken from an other recording and reproducing device. SOLUTION: Information STA about error processing decided in a record format is used as information for verifying quality at the time of backup for a digital VTR 2 from an editing device 1, the error information STA is checked at the reread-out directly after backup, and quality of backup processing is verified. When backup is not performed normally, rewriting is performed. The error information STA is used also as information for verifying quality at the time of reload for restoring the error information STA to an original editing state, the error information STA is checked at the time of reload, and quality of reload processing is verified. When reload is not performed normally, rewriting is performed.
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公开(公告)号：JPH1146336A
公开(公告)日：1999-02-16
申请号：JP20026797
申请日：1997-07-25
Applicant: SONY CORP
Inventor： OKADA TSUNEICHI , ONO KOICHI
IPC: H04N5/765 , G11B27/02 , G11B27/031 , H04N5/781 , H04N5/91
Abstract: PROBLEM TO BE SOLVED: To provide an editing device by which a clip image is simply generated. SOLUTION: This editing device is provided with a tape editing device 4 that records/reproduces input video data, based on a format with data denoting start and end of recording of video data for each frame and with a disk editing device 5, that detects the data denoting start and end of recording of video data and generates clip data with image information, in the case of applying recording/reproducing the video data supplied from the tape editing device 4.
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公开(公告)号：JPS63293990A
公开(公告)日：1988-11-30
申请号：JP13036887
申请日：1987-05-27
Applicant: SONY CORP
Inventor： OKADA TSUNEICHI , YAMAGUCHI NOZOMI
Abstract: PURPOSE:To reduce the variation of the intensity of output beams due to a temperature change by bringing the temperature dependency characteristics of the intensity of laser beams transmitted through an edge-face protective film in a semiconductor laser element and the temperature dependency characteristics of a detecting output from a photo-detector to mutually reverse characteristics. CONSTITUTION:A photo-detector 16 for monitoring is arranged under the state in which it is tilted to a semiconductor laser element 11 on the output edge face 13 side of the semiconductor laser element 11. A surface protective film 17 is also formed on the light-receiving surface of the photo-detector 16. The temperature dependency characteristics of the intensity of laser beams transmitted through edge-face protective films 14, 15 in the semiconductor laser element 11 and the temperature dependency characteristics of a detecting output from the photo-detector 16 for controlling an output are brought to mutually reverse characteristics, thus offsetting both temperature dependency. Accordingly, the temperature dependency of an output from a semiconductor laser device is reduced extremely.
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公开(公告)号：JPS6180888A
公开(公告)日：1986-04-24
申请号：JP20284184
申请日：1984-09-27
Applicant: Sony Corp
Inventor： SAKAMOTO MASAMICHI , OKADA TSUNEICHI
Abstract: PURPOSE: To realize a high-efficiency, instant evaluation of compound semi conductors by a method wherein evaluation of crystallinity is accomplished by using the photoluminescence measurement technique to eliminate the need for cap seal after electrode formation.
CONSTITUTION: On a substrate 30, a first compound semiconductor layer 31 of the P or N type is epitaxially grown, whereon a second and third compound semiconductor layers 32, 33 of the same conductivity type are epitaxially grown, for the production of a specimen 34. Exciting light 47 out of a light source 41 is thrown upon the specimen 34, and the resultant photoluminescence 48 is measured. The exciting light 47 thrown upon the specimen 34 is larger than the third semiconductor layer 32 in terms of energy gap, and smaller than the first semiconductor layer 31. The photoluminescence 48 induced by the light 47 therefore is scarcely absorbed by the third semiconductor layer 33 but is absorbed by the second semiconductor layer 32.
COPYRIGHT: (C)1986,JPO&JapioAbstract translation: 目的：通过使用光致发光测量技术来实现对结晶度进行评估以消除在电极形成之后对盖密封的需要的方法来实现复合半导体的高效率即时评估。 构成：在衬底30上，外延生长P或N型的第一化合物半导体层31，其中外延生长相同导电类型的第二和第三化合物半导体层32,33，用于制备样品34 将来自光源41的激发光47投射到样本34上，并测量所得到的光致发光48。 投射在样本34上的激发光47在能隙方面大于第三半导体层32，并且小于第一半导体层31.因此，由光47引起的光致发光48几乎不被第三半导体层33吸收 但被第二半导体层32吸收。
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公开(公告)号：JPS60225488A
公开(公告)日：1985-11-09
申请号：JP8144284
申请日：1984-04-23
Applicant: SONY CORP
Inventor： MAMINE TAKAYOSHI , OKADA TSUNEICHI , YONEYAMA OSAMU
Abstract: PURPOSE:To contrive the stabilization of a junction position and characteristics by inhibiting the increase of threshold current Ith by a method wherein layers with a small amount of impurity doping are provided in the first and second clad layers on the side of contact with an active layer. CONSTITUTION:The first clad layer 2 and the second clad layer 4 with forbidden band widths larger than that of the active layer 3 are provided with low impurity concentration layers 2a and 4a, respectively, on the sides of contact with the active layer 3a, and with high impurity concentration layers 2b and 4b, respectively, on the sides of keeping away from the active layer 3. Reduction in impurity concentration of the parts of the clad layers 2 and 4 in contact with the active layer 3 enables the inhibition of a current path spreading laterally so as to penetrate down to a non-implanted region 6 and the lateral diffusion of implanted carriers, resulting in the reduction in threshold current Ith. Besides, the movement of acceptors and donors caused by the heat during epitaxial growth can be inhibited, thereby stabilizing the junction position or the characteristics. Further, the series resistance and the leakage of carriers to the hetero junction can be reduced, accordingly, the temperature-dependance of threshold current Ith can be dimished.
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