公开(公告)号：AU2594399A

公开(公告)日：1999-08-23

申请号：AU2594399

申请日：1999-02-09

Applicant: TESSERA INC

Inventor： HABA BELGACEM ,  ESLAMPOUR HAMID

IPC: H05K3/32 ,  H01L21/48 ,  H01L21/60 ,  H01L23/13 ,  H01L23/32 ,  H01L23/48 ,  H01L23/498 ,  H05K3/40 ,  H05K3/30 ,  H01R9/09

Abstract: A microelectronic component is made by providing a starting structure having a dielectric layer (22) and leads on a surface of the dielectric layer. The dielectric layer is etched to partially detach the leads (24) from the dielectric layer, leaving a portion of each lead releasably connected to the dielectric layer. Ends of the leads (24) may be connected to contacts (52) on a microelectronic element (50), such as the contacts on a semiconductor chip or wafer, before the dielectric layer (22) is etched to partially detach the leads (24) from the dielectric layer. The lead is partially detached from the dielectric layer so that the dielectric layer can be broken or peeled away from the leads during the step of moving the microelectronic element (50) and dielectric layer (22) away from one another.

公开(公告)号：EP1059019A4

公开(公告)日：2007-10-17

申请号：EP99905891

申请日：1999-02-09

Applicant: TESSERA INC

Inventor： HABA BELGACEM ,  ESLAMPOUR HAMID ,  KARAVAKIS KONSTANTINE

IPC: H05K3/32 ,  H01L21/48 ,  H01L21/60 ,  H01L23/13 ,  H01L23/32 ,  H01L23/48 ,  H01L23/498 ,  H05K3/40 ,  H05K3/30 ,  H01R9/09

CPC classification number: H05K3/4092 ,  H01L21/4846 ,  H01L23/13 ,  H01L23/49811 ,  H01L23/4985 ,  H01L24/13 ,  H01L24/72 ,  H01L24/81 ,  H01L2223/6622 ,  H01L2223/6627 ,  H01L2224/81192 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01061 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/1903 ,  H01L2924/3011

Abstract: A microelectronic component is made by providing a starting structure having a dielectric layer (22) and leads on a surface of the dielectric layer. The dielectric layer is etched to partially detach the leads (24) from the dielectric layer, leaving a portion of each lead releasably connected to the dielectric layer. Ends of the leads (24) may be connected to contacts (52) on a microelectronic element (50), such as the contacts on a semiconductor chip or wafer, before the dielectric layer (22) is etched to partially detach the leads (24) from the dielectric layer. The lead is partially detached from the dielectric layer so that the dielectric layer can be broken or peeled away from the leads during the step of moving the microelectronic element (50) and dielectric layer (22) away from one another.