公开(公告)号：EP0911869A2

公开(公告)日：1999-04-28

申请号：EP98308635.6

申请日：1998-10-22

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Wilk, Glen D. ,  Wallace, Robert M. ,  Brar, Berinder P.S.

IPC: H01L21/28 ,  H01L29/51

CPC classification number: H01L29/51 ,  H01L21/28167

Abstract: This invention pertains generally to forming thin oxides at low temperatures, and more particularly to forming uniformly thick, thin oxides. We disclose a low temperature method for forming a thin, uniform oxide 16 on a silicon surface 12. This method includes providing a partially completed integrated circuit on a semiconductor substrate 10 with a clean, hydrogen terminated or atomically flat, silicon surface 12; and stabilizing the substrate at a first temperature. The method further includes exposing the silicon surface to an atmosphere 14 including ozone, while maintaining the substrate 10 at the first temperature. In this method, the exposing step creates a uniformly thick, oxide film 16. This method is suitable for room temperature processing.

Abstract translation: 本发明一般涉及在低温下形成薄氧化物，尤其涉及形成均匀的厚的氧化物。 我们公开了一种用于在硅表面12上形成薄均匀氧化物16的低温方法。该方法包括在半导体衬底10上提供部分完成的集成电路，其具有清洁的，氢封端或原子平坦的硅表面12; 以及在第一温度下稳定所述衬底。 该方法还包括将硅表面暴露于包括臭氧的气氛14，同时将衬底10保持在第一温度。 在该方法中，曝光步骤产生均匀厚的氧化膜16.该方法适用于室温处理。

公开(公告)号：EP0911869A3

公开(公告)日：2002-05-08

申请号：EP98308635.6

申请日：1998-10-22

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Wilk, Glen D. ,  Wallace, Robert M. ,  Brar, Berinder P.S.

IPC: H01L21/28 ,  H01L29/51

CPC classification number: H01L29/51 ,  H01L21/28167

Abstract: This invention pertains generally to forming thin oxides at low temperatures, and more particularly to forming uniformly thick, thin oxides. We disclose a low temperature method for forming a thin, uniform oxide 16 on a silicon surface 12. This method includes providing a partially completed integrated circuit on a semiconductor substrate 10 with a clean, hydrogen terminated or atomically flat, silicon surface 12; and stabilizing the substrate at a first temperature. The method further includes exposing the silicon surface to an atmosphere 14 including ozone, while maintaining the substrate 10 at the first temperature. In this method, the exposing step creates a uniformly thick, oxide film 16. This method is suitable for room temperature processing.