公开(公告)号：EP0652486A2

公开(公告)日：1995-05-10

申请号：EP94117344.5

申请日：1994-11-03

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Beratan, Howard R. ,  Cho, Chih - Chen ,  Summerfelt, Scott R.

IPC: G03F7/085 ,  H01L21/48 ,  G03F7/004 ,  C08J7/04

CPC classification number: G03F7/085 ,  G03F7/0046

Abstract: This is a device and method of forming such, wherein the device has an amorphous "TEFLON" (TFE AF) layer. The method comprising: depositing an TFE AF layer 36 on a substrate; combining a fluorosurfactant with a first material to produce a second material 38; and depositing the second material 38 on the TFE AF layer 36. The method may include: patterning and etching the second material; removing the second material; and forming a third material 42 on the TFE AF layer 44. The third material may be a metal or a semiconductor. The ZFSNF fluorosurfactant may be combined with a photoresist and then patterned and etched. The TFE AF layer may also be heated. A second coating of the second material may also be added.

Abstract translation: 制造商。 在三氟乙烯与2,2-双（三氟甲基）-4,5-二氟-1,3-二氧杂环戊烯（TFE AF）的共聚物层的一个装置中包括：（a）将TFE AF层沉积在基材上 ; （b）将氟 - 表面活性剂与第一材料组合以形成第二材料; 和（c）将第二材料沉积在TFE AF层上。 还要求保护的是在包括上述（a） - （c）加上（d） - （e）的装置中形成TFE AF层的方法。

公开(公告)号：EP0652486B1

公开(公告)日：1999-08-11

申请号：EP94117344.5

申请日：1994-11-03

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Beratan, Howard R. ,  Cho, Chih - Chen ,  Summerfelt, Scott R.

IPC: G03F7/085 ,  H01L21/48 ,  G03F7/004 ,  C08J7/04

CPC classification number: G03F7/085 ,  G03F7/0046

公开(公告)号：EP0652486A3

公开(公告)日：1995-12-27

申请号：EP94117344.5

申请日：1994-11-03

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Beratan, Howard R. ,  Cho, Chih - Chen ,  Summerfelt, Scott R.

IPC: G03F7/085 ,  H01L21/48 ,  G03F7/004 ,  C08J7/04

CPC classification number: G03F7/085 ,  G03F7/0046

Abstract: This is a device and method of forming such, wherein the device has an amorphous "TEFLON" (TFE AF) layer. The method comprising: depositing an TFE AF layer 36 on a substrate; combining a fluorosurfactant with a first material to produce a second material 38; and depositing the second material 38 on the TFE AF layer 36. The method may include: patterning and etching the second material; removing the second material; and forming a third material 42 on the TFE AF layer 44. The third material may be a metal or a semiconductor. The ZFSNF fluorosurfactant may be combined with a photoresist and then patterned and etched. The TFE AF layer may also be heated. A second coating of the second material may also be added.