公开(公告)号：EP0721225A3

公开(公告)日：1998-04-08

申请号：EP95309542.9

申请日：1995-12-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Belcher, James F. ,  Summerfelt, Scott R. ,  Beratan, Howard R.

IPC: H01L37/02

CPC classification number: G01J5/34 ,  H01L37/02

Abstract: An array of thermally sensitive elements (16) may be formed from a pyroelectric substrate (46) having an infrared absorber and common electrode assembly (18) attached thereto. A first layer of electrically conductive contacts (60) is formed to define in part masked (61) and unmasked (68) regions of the substrate (46). A second layer of electrically conductive contacts (62) may be formed on the first layer of contacts (60). A mask layer (66) is formed to encapsulate the exposed portions of the second layer of contacts (62). The unmasked regions (68) are exposed to an etchant (70) and irradiated to substantially increase the reactivity between the unmasked regions (68) and the etchant (70) such that during irradiation, the etchant (70) removes the unmasked regions (68) substantially faster than the first layer of contacts (60) and the mask layer (66).

公开(公告)号：EP0661244A3

公开(公告)日：1996-09-11

申请号：EP94114943.7

申请日：1994-09-22

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Summerfelt, Scott R. ,  Beratan, Howard R. ,  Kulwicki, Bernard

IPC: C04B35/49

CPC classification number: C04B35/465 ,  C04B35/62218

Abstract: The invention described forms improved ferroelectric (or pyroelectric) layer by adding lead to an original perovskite layer having an original ferroelectric (or pyroelectric) critical grain size, then forming a layer of the lead enhanced perovskite layer having an average grain size less than the original ferroelectric (or pyroelectric) critical grain size whereby the remanent polarization (or pyroelectric figure of merit) of the layer is substantially greater than the remanent polarization (or pyroelectric figure of merit) of the original perovskite layer with an average grain size similar to the average grain size of the layer. The critical ferroelectric (or pyroelectric) grain size, as used herein, means the largest grain size such that the remanent polarization (or pyroelectric figure of merit) starts to rapidly decrease with decreasing grain sizes. Preferably, n-type lead enhanced perovskite layer is doped with one or more acceptor dopants whereby the resistivity is substantially increased. Preferably, p-type lead enhanced perovskite layer is doped with one or more donor dopants whereby the resistivity is substantially increased. Preferably, the original perovskite layer has a chemical composition ABO 3 , where A is one or more monovalent, divalent or trivalent elements, and B is one or more pentavalent, tetravalent, trivalent or divalent elements. Structures containing an improved ferroelectric (or pyroelectric) layer include a layer of lead enhanced perovskite layer with average grain size less than the original ferroelectric (or pyroelectric) critical grain size formed on the surface of a substrate. Other structures include such a layer of lead enhanced layer interposed between two electrically conducting layers.

公开(公告)号：EP0618598A1

公开(公告)日：1994-10-05

申请号：EP94104867.0

申请日：1994-03-28

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Summerfelt, Scott R. ,  Beratan, Howard R.

IPC: H01G4/20 ,  H01G7/06 ,  H01L27/108

CPC classification number: H01L27/11502 ,  H01G4/306 ,  H01G7/06 ,  H01L28/56

Abstract: A preferred embodiment of this invention comprises a first thin dielectric buffer layer of a first leakage-current-density material (e.g. strontium titanate 32 ) with a first moderate-dielectric-constant, a high-dielectric-constant layer of a second leakage-current-density material (e.g. barium strontium titanate 34 ) overlaying the first thin dielectric buffer layer, and a second thin dielectric buffer layer of a third leakage-current-density material (e.g. strontium titanate 36 ) with a second moderate-dielectric-constant overlaying the high-dielectric-constant layer, wherein the first and third leakage-current-density materials have substantially lower leakage-current-densities than the second leakage-current-density material. The first and second thin moderate-dielectric-constant buffer layers (e.g. strontium titanate 32 , 36 ) substantially limit the leakage-current-density of the structure, with only modest degradation of the dielectric constant of the structure. The possibly lower dielectric constant of the structure is generally compensated for by the reduced leakage current of the structure. The additional layers generally require only minor modifications of existing processes, since the same processes that are used for the high-dielectric-constant oxide can generally be used for the low leakage-current-density dielectric. These structures may also be used for multilayer capacitors and other thin-film ferroelectric devices such as pyroelectric materials, non-volatile memories, thin-film piezoelectric and thin-film electro-optic oxides.

Abstract translation: 本发明的优选实施例包括一第一泄漏电流密度的材料（例如钛酸锶32）的第一薄介电缓冲层与第一中等介电常数，高的介电常数的第二漏电流的层 -density材料覆盖所述第一薄介电缓冲层（例如钛酸锶钡34），以及第三漏电流密度材料制成的第二电介质薄缓冲层（例如钛酸锶36）与第二中等介电常数覆盖所述 高介电常数层，worin第一和第三漏电流密度的材料具有显着更低的漏电流密度比第二泄漏电流密度的材料。 在第一和第二薄适中介电常数缓冲层（例如钛酸锶32，36）基本上限制该结构的漏电流密度，只有结构的介电常数的适度退化。 该结构的可能更低的介电常数是由结构的减小的漏电流进行补偿基因的反弹。 附加层基因反弹需要现有流程的仅较小的修改，由于相同的工艺被用于做的高介电系数氧化物可以产生拉力被用于低漏电流密度的电介质。 因此可以用于多层电容器和其它薄膜铁电体元件，这些结构：如热电材料，非易失性存储器，薄膜压电和薄膜电光氧化物。

公开(公告)号：EP0567063A2

公开(公告)日：1993-10-27

申请号：EP93106374.7

申请日：1993-04-20

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Douglas, Monte A. ,  Summerfelt, Scott R. ,  Beratan, Howard R.

IPC: H01L21/311 ,  H01L41/24 ,  H01L39/24 ,  C04B41/53

CPC classification number: G03F7/2041 ,  C04B41/5353 ,  C04B41/91 ,  H01L21/31111 ,  H01L28/55

Abstract: A metal oxide substrate (e.g. barium strontium titanate 34 ) is immersed in a liquid ambient (e.g. 12 molar concentration hydrochloric acid 30 ) and illuminated with radiation (e.g. collimated visible/ultraviolet radiation 24 ) produced by a radiation source (e.g. a 200 Watt mercury xenon arc lamp 20 ). A window 26 which is substantially transparent to the collimated radiation 24 allows the radiated energy to reach the metal oxide substrate 34 . An etch mask 32 may be positioned between the radiation source 20 and the substrate 34 . The metal oxide substrate 34 and liquid ambient 30 are maintained at a nominal temperature (e.g. 25 °C). Without illumination, the metal oxide is not appreciably etched by the liquid ambient. Upon illumination the etch rate is substantially increased.

Abstract translation: 将金属氧化物基底（例如钛酸钡锶34）浸入液体环境（例如12摩尔浓度的盐酸30）中，并用辐射源（例如200瓦汞柱）产生的辐射（例如准直的可见/紫外线辐射24）照射 氙弧灯20）。 对准直辐射24基本透明的窗口26允许辐射能量到达金属氧化物衬底34.蚀刻掩模32可以位于辐射源20和衬底34之间。金属氧化物衬底34和液体环境30 保持在标称温度（例如25℃）。 没有照明，金属氧化物不被液体环境明显腐蚀。 在照射时，蚀刻速率显着增加。

公开(公告)号：EP0567063B1

公开(公告)日：1998-03-04

申请号：EP93106374.7

申请日：1993-04-20

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Douglas, Monte A. ,  Summerfelt, Scott R. ,  Beratan, Howard R.

IPC: H01L21/311 ,  H01L41/24 ,  H01L39/24 ,  C04B41/53

CPC classification number: G03F7/2041 ,  C04B41/5353 ,  C04B41/91 ,  H01L21/31111 ,  H01L28/55

公开(公告)号：EP0721225A2

公开(公告)日：1996-07-10

申请号：EP95309542.9

申请日：1995-12-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Belcher, James F. ,  Summerfelt, Scott R. ,  Beratan, Howard R.

IPC: H01L37/02

CPC classification number: G01J5/34 ,  H01L37/02

Abstract: An array of thermally sensitive elements (16) may be formed from a pyroelectric substrate (46) having an infrared absorber and common electrode assembly (18) attached thereto. A first layer of electrically conductive contacts (60) is formed to define in part masked (61) and unmasked (68) regions of the substrate (46). A second layer of electrically conductive contacts (62) may be formed on the first layer of contacts (60). A mask layer (66) is formed to encapsulate the exposed portions of the second layer of contacts (62). The unmasked regions (68) are exposed to an etchant (70) and irradiated to substantially increase the reactivity between the unmasked regions (68) and the etchant (70) such that during irradiation, the etchant (70) removes the unmasked regions (68) substantially faster than the first layer of contacts (60) and the mask layer (66).

Abstract translation: 热敏元件阵列（16）可以由具有红外线吸收器和附接到其上的公共电极组件（18）的热电基底（46）形成。 第一层导电触头（60）被形成以限定衬底（46）的一部分屏蔽（61）和未屏蔽（68）区域。 可以在第一层触点（60）上形成第二层导电触点（62）。 形成掩模层（66）以封装第二层触点（62）的暴露部分。 未掩蔽区域（68）暴露于蚀刻剂（70）并被照射以显着增加未掩模区域（68）和蚀刻剂（70）之间的反应性，使得在照射期间，蚀刻剂（70）去除未掩蔽区域（68） ）比第一层触点（60）和掩模层（66）快得多。

公开(公告)号：EP0685573A1

公开(公告)日：1995-12-06

申请号：EP95105236.4

申请日：1995-04-07

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Belcher, James F. ,  Beratan, Howard R. ,  Johnson, Paul O.

IPC: C23F1/00 ,  C04B41/53 ,  B24B37/04

CPC classification number: B24B37/04 ,  C04B41/5353 ,  Y10S505/728

Abstract: A method of polishing ferroelectric materials and specifically perovskite materials and still more specifically barium strontium titanate wherein the surface to be polished is initially partially smoothened or planarized by mechanical abrading with final smoothening or planarization provided by a chemical polishing with a polishing wheel using an acidic solution containing essentially the acid, hydrogen peroxide and water. Preferred acids are perchloric acid, acetic acid, nitric acid and combinations thereof.

Abstract translation: 一种抛光铁电材料，特别是钙钛矿材料，更具体地说是钛酸钡锶的方法，其中待抛光的表面最初通过机械研磨部分地平滑化或平坦化，最终的平滑化或平坦化，通过使用酸性溶液的抛光轮进行化学抛光 基本上含有酸，过氧化氢和水。 优选的酸是高氯酸，乙酸，硝酸及其组合。

公开(公告)号：EP0652486A2

公开(公告)日：1995-05-10

申请号：EP94117344.5

申请日：1994-11-03

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Beratan, Howard R. ,  Cho, Chih - Chen ,  Summerfelt, Scott R.

IPC: G03F7/085 ,  H01L21/48 ,  G03F7/004 ,  C08J7/04

CPC classification number: G03F7/085 ,  G03F7/0046

Abstract: This is a device and method of forming such, wherein the device has an amorphous "TEFLON" (TFE AF) layer. The method comprising: depositing an TFE AF layer 36 on a substrate; combining a fluorosurfactant with a first material to produce a second material 38; and depositing the second material 38 on the TFE AF layer 36. The method may include: patterning and etching the second material; removing the second material; and forming a third material 42 on the TFE AF layer 44. The third material may be a metal or a semiconductor. The ZFSNF fluorosurfactant may be combined with a photoresist and then patterned and etched. The TFE AF layer may also be heated. A second coating of the second material may also be added.

Abstract translation: 制造商。 在三氟乙烯与2,2-双（三氟甲基）-4,5-二氟-1,3-二氧杂环戊烯（TFE AF）的共聚物层的一个装置中包括：（a）将TFE AF层沉积在基材上 ; （b）将氟 - 表面活性剂与第一材料组合以形成第二材料; 和（c）将第二材料沉积在TFE AF层上。 还要求保护的是在包括上述（a） - （c）加上（d） - （e）的装置中形成TFE AF层的方法。

公开(公告)号：EP0827216B1

公开(公告)日：2007-01-24

申请号：EP97115009.9

申请日：1997-08-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Beratan, Howard R.

IPC: H01L37/02

CPC classification number: H01L37/02

公开(公告)号：EP0618597B1

公开(公告)日：1997-07-16

申请号：EP94104866.2

申请日：1994-03-28

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Summerfelt, Scott R. ,  Beratan, Howard R. ,  Gnade,Bruce

IPC: H01G4/008 ,  H01L27/115 ,  H01L27/108

CPC classification number: H01G4/008 ,  H01L21/31691 ,  H01L27/11502 ,  H01L28/56 ,  Y10S257/917 ,  Y10T29/43 ,  Y10T29/435