Abstract:
In one embodiment, a system for measuring the temperature of a first object, such as wafer 112, in the presence of a second radiating object, such as a heating lamp 118, is disclosed herein. A heating lamp 118 is provided for heating the wafer 112 for device processing. Both the wafer 112 and the lamp 118 emit radiation. A first detector 120 detects radiation emitted by both the wafer 112 and the lamp 118. A second detector 122 which detects radiation from only the heating lamp 118 may also be used. A modulation source 126 is provided for modulating the heater 118 to a selected modulation depth M L such that the temperature of the lamp 118 varies with the selected AC modulation and the temperature of the wafer 112 remains substantially constant. Also, circuitry is provided for determining the fraction of radiation emitted by the lamp and collected by the first detector 120 (lamp interference signal) based upon the heating lamp modulation and then calculating the precise temperature of the wafer 112. Other systems and methods are also disclosed.
Abstract:
In one embodiment, a system for measuring the temperature of a first object, such as wafer 112, in the presence of a second radiating object, such as a heating lamp 118, is disclosed herein. A heating lamp 118 is provided for heating the wafer 112 for device processing. Both the wafer 112 and the lamp 118 emit radiation. A first detector 120 detects radiation emitted by both the wafer 112 and the lamp 118. A second detector 122 which detects radiation from only the heating lamp 118 may also be used. A modulation source 126 is provided for modulating the heater 118 to a selected modulation depth M L such that the temperature of the lamp 118 varies with the selected AC modulation and the temperature of the wafer 112 remains substantially constant. Also, circuitry is provided for determining the fraction of radiation emitted by the lamp and collected by the first detector 120 (lamp interference signal) based upon the heating lamp modulation and then calculating the precise temperature of the wafer 112. Other systems and methods are also disclosed.