Method and apparatus for precise temperature measurement
    1.
    发明公开
    Method and apparatus for precise temperature measurement 失效
    用于精确温度测量的方法和设备

    公开(公告)号:EP0539984A3

    公开(公告)日:1994-04-13

    申请号:EP92118509.6

    申请日:1992-10-29

    Abstract: In one embodiment, a system for measuring the temperature of a first object, such as wafer 112, in the presence of a second radiating object, such as a heating lamp 118, is disclosed herein. A heating lamp 118 is provided for heating the wafer 112 for device processing. Both the wafer 112 and the lamp 118 emit radiation. A first detector 120 detects radiation emitted by both the wafer 112 and the lamp 118. A second detector 122 which detects radiation from only the heating lamp 118 may also be used. A modulation source 126 is provided for modulating the heater 118 to a selected modulation depth M L such that the temperature of the lamp 118 varies with the selected AC modulation and the temperature of the wafer 112 remains substantially constant. Also, circuitry is provided for determining the fraction of radiation emitted by the lamp and collected by the first detector 120 (lamp interference signal) based upon the heating lamp modulation and then calculating the precise temperature of the wafer 112. Other systems and methods are also disclosed.

    Abstract translation: 在一个实施例中,本文公开了一种用于在诸如加热灯118的第二辐射物体的存在下测量诸如晶片112的第一物体的温度的系统。 加热灯118用于加热晶片112以进行器件处理。 晶片112和灯118都发射辐射。 第一检测器120检测由晶片112和灯118发出的辐射。也可以使用检测仅来自加热灯118的辐射的第二检测器122。 提供调制源126,用于将加热器118调制到选定的调制深度ML,使得灯118的温度随所选AC调制而变化,并且晶片112的温度保持基本恒定。 此外,还提供了用于基于加热灯调制确定由灯发射并由第一检测器120收集的辐射的部分(灯干扰信号)并且然后计算晶片112的精确温度的电路。其他系统和方法也是 披露。

    Method and apparatus for precise temperature measurement
    3.
    发明公开
    Method and apparatus for precise temperature measurement 失效
    Verfahren und VorrichtungfüreinepräziseTemperaturmessung。

    公开(公告)号:EP0539984A2

    公开(公告)日:1993-05-05

    申请号:EP92118509.6

    申请日:1992-10-29

    Abstract: In one embodiment, a system for measuring the temperature of a first object, such as wafer 112, in the presence of a second radiating object, such as a heating lamp 118, is disclosed herein. A heating lamp 118 is provided for heating the wafer 112 for device processing. Both the wafer 112 and the lamp 118 emit radiation. A first detector 120 detects radiation emitted by both the wafer 112 and the lamp 118. A second detector 122 which detects radiation from only the heating lamp 118 may also be used. A modulation source 126 is provided for modulating the heater 118 to a selected modulation depth M L such that the temperature of the lamp 118 varies with the selected AC modulation and the temperature of the wafer 112 remains substantially constant. Also, circuitry is provided for determining the fraction of radiation emitted by the lamp and collected by the first detector 120 (lamp interference signal) based upon the heating lamp modulation and then calculating the precise temperature of the wafer 112. Other systems and methods are also disclosed.

    Abstract translation: 在一个实施例中,本文公开了一种用于在存在第二辐射物体(例如加热灯118)的情况下测量第一物体(例如晶片112)的温度的系统。 提供加热灯118用于加热用于器件处理的晶片112。 晶片112和灯118都发射辐射。 第一检测器120检测由晶片112和灯118两者发射的辐射。也可以使用仅检测来自加热灯118的辐射的第二检测器122。 提供调制源126用于将加热器118调制到选定的调制深度ML,使得灯118的温度随所选AC调制而变化,并且晶片112的温度保持基本恒定。 此外,提供了用于基于加热灯调制确定由灯发射并由第一检测器120收集的辐射的分数(灯干扰信号),然后计算晶片112的精确温度的电路。其它系统和方法也是 披露。

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