公开(公告)号：EP0668618A2

公开(公告)日：1995-08-23

申请号：EP94107763.8

申请日：1994-05-19

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Bate, Robert T. ,  Cho, Chih-Chen ,  Gnade, Bruce E. ,  Reed, Mark

IPC: H01L29/88 ,  H01L29/73 ,  H01L21/329 ,  H01L21/331

CPC classification number: B82Y10/00 ,  H01L29/66151 ,  H01L29/66939 ,  H01L29/772 ,  H01L29/882

Abstract: A resonant tunneling device and method of making same wherein the tunneling device includes a quantum well composed of silicon, and a pair of tunneling barriers of a material having a bandgap wider than that of silicon and epitaxially depositable on silicon on opposing surfaces of the quantum well. Aluminium can be substituted for the silicon. The tunneling barriers can be doped with a p-type or n-type dopant. A contact is disposed on each of the barrier layers and remote from the quantum well. In a further embodiment, there are provided second and third layers of silicon, each disposed on one of the tunneling barriers and remote from the quantum well, the contacts being connected to the second and third layers of silicon. In a further embodiment, a third contact is disposed on the quantum well.

Abstract translation: 一种谐振隧穿器件及其制造方法，其中隧道器件包括由硅构成的量子阱和一对材料的隧穿势垒，该材料的带隙宽于硅的带隙并且可以在量子阱的相对表面上在硅上外延沉积 。 铝可以代替硅。 隧道势垒可以掺杂有p型或n型掺杂剂。 触点设置在每个阻挡层上并且远离量子阱。 在另一个实施例中，提供了第二和第三硅层，每一层设置在隧道势垒之一上并且远离量子阱，触点连接到第二和第三硅层。 在另一个实施例中，第三触点设置在量子阱上。

公开(公告)号：EP0668618A3

公开(公告)日：1995-12-20

申请号：EP94107763.8

申请日：1994-05-19

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Bate, Robert T. ,  Cho, Chih-Chen ,  Gnade, Bruce E. ,  Reed, Mark

IPC: H01L29/88 ,  H01L29/73 ,  H01L21/329 ,  H01L21/331

CPC classification number: B82Y10/00 ,  H01L29/66151 ,  H01L29/66939 ,  H01L29/772 ,  H01L29/882

Abstract: A resonant tunneling device and method of making same wherein the tunneling device includes a quantum well composed of silicon, and a pair of tunneling barriers of a material having a bandgap wider than that of silicon and epitaxially depositable on silicon on opposing surfaces of the quantum well. Aluminium can be substituted for the silicon. The tunneling barriers can be doped with a p-type or n-type dopant. A contact is disposed on each of the barrier layers and remote from the quantum well. In a further embodiment, there are provided second and third layers of silicon, each disposed on one of the tunneling barriers and remote from the quantum well, the contacts being connected to the second and third layers of silicon. In a further embodiment, a third contact is disposed on the quantum well.

Abstract translation: 一种谐振隧穿装置及其制造方法，其中隧穿装置包括由硅组成的量子阱，以及一对具有宽于硅硅片的带隙并外延沉积于量子阱相对表面的硅上的材料的隧道势垒 。 铝可以代替硅。 隧道势垒可以用p型或n型掺杂剂掺杂。 接触件设置在每个阻挡层上并且远离量子阱。 在另一个实施例中，提供了第二和第三层硅层，每个层分别设置在一个隧道势垒上并且远离量子阱，该触点连接到第二和第三层硅层。 在另一实施例中，第三触点设置在量子阱上。