公开(公告)号：EP0849806A2

公开(公告)日：1998-06-24

申请号：EP97310339.3

申请日：1997-12-19

Applicant: Texas Instruments Incorporated

Inventor： Cho, Chih-Chen

IPC: H01L29/43

CPC classification number: H01L29/4941

Abstract: A semiconductor device is provided that includes a tungsten region (20) having tungsten nitride sidewalls (24). The semiconductor device includes a tungsten region (20) formed above a semiconductor substrate (10). Tungsten nitride sidewalls (24) are then formed on the tungsten region (20). The tungsten nitride sidewalls (24) provide a barrier for sides of the tungsten region (20).

公开(公告)号：EP0668618A3

公开(公告)日：1995-12-20

申请号：EP94107763.8

申请日：1994-05-19

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Bate, Robert T. ,  Cho, Chih-Chen ,  Gnade, Bruce E. ,  Reed, Mark

IPC: H01L29/88 ,  H01L29/73 ,  H01L21/329 ,  H01L21/331

CPC classification number: B82Y10/00 ,  H01L29/66151 ,  H01L29/66939 ,  H01L29/772 ,  H01L29/882

Abstract: A resonant tunneling device and method of making same wherein the tunneling device includes a quantum well composed of silicon, and a pair of tunneling barriers of a material having a bandgap wider than that of silicon and epitaxially depositable on silicon on opposing surfaces of the quantum well. Aluminium can be substituted for the silicon. The tunneling barriers can be doped with a p-type or n-type dopant. A contact is disposed on each of the barrier layers and remote from the quantum well. In a further embodiment, there are provided second and third layers of silicon, each disposed on one of the tunneling barriers and remote from the quantum well, the contacts being connected to the second and third layers of silicon. In a further embodiment, a third contact is disposed on the quantum well.

Abstract translation: 一种谐振隧穿装置及其制造方法，其中隧穿装置包括由硅组成的量子阱，以及一对具有宽于硅硅片的带隙并外延沉积于量子阱相对表面的硅上的材料的隧道势垒 。 铝可以代替硅。 隧道势垒可以用p型或n型掺杂剂掺杂。 接触件设置在每个阻挡层上并且远离量子阱。 在另一个实施例中，提供了第二和第三层硅层，每个层分别设置在一个隧道势垒上并且远离量子阱，该触点连接到第二和第三层硅层。 在另一实施例中，第三触点设置在量子阱上。

公开(公告)号：EP0557890A2

公开(公告)日：1993-09-01

申请号：EP93102551.4

申请日：1993-02-18

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Cho, Chih-Chen

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/314

CPC classification number: H01L21/32051 ,  H01L21/28512 ,  H01L21/314

Abstract: In one form of the invention, a method for the growth of an epitaxial insulator-metal structure on a semiconductor surface comprising the steps of maintaining the semiconductor surface at a pressure below approximately 1x10⁻⁷ mbar, maintaining the semiconductor surface at a substantially fixed first temperature between approximately 25°C and 400°C, 30 depositing an epitaxial metal layer on the semiconductor surface, 32 adjusting the semiconductor surface to a substantially fixed second temperature between approximately 25°C and 200°C, 34 starting a deposition of epitaxial CaF₂ on the first metal layer, 36 ramping the second temperature to a third substantially fixed temperature between 200°C and 500°C over a time period, maintaining the third temperature until the epitaxial CaF₂ has deposited to a desired thickness, and stopping the deposition of epitaxial CaF₂ on the first metal layer.
Other devices, systems and methods are also disclosed.

Abstract translation: 在本发明的一种形式中，用于在半导体表面上生长外延绝缘体 - 金属结构的方法包括以下步骤：将半导体表面保持在低于约1×10 -7 mbar的压力下，将半导体表面保持在 在大约25℃至400℃之间的基本上固定的第一温度，30在半导体表面上沉积外延金属层，32将半导体表面调整到约25℃至200℃之间的基本上固定的第二温度，34开始 将外延CaF 2沉积在第一金属层上，36将第二温度在一段时间内将第二温度升温至200℃至500℃之间的第三基本上固定的温度，保持第三温度，直到外延CaF 2沉积到所需厚度为止，以及 停止在第一金属层上沉积外延CaF 2。 还公开了其它装置，系统和方法。

公开(公告)号：EP0562273B1

公开(公告)日：2001-01-31

申请号：EP93102540.7

申请日：1993-02-18

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Cho, Chih-Chen ,  Gnade, Bruce E. ,  Liu, Hung-Yu ,  Kim, Tae Seung ,  Nishioka, Yasushiro

IPC: H01L21/314 ,  H01L21/20 ,  H01L21/36

CPC classification number: H01L21/314 ,  Y10S438/91

公开(公告)号：EP0588327A1

公开(公告)日：1994-03-23

申请号：EP93114866.2

申请日：1993-09-15

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Cho, Chih-Chen ,  Duncan, Walter M.

IPC: H01S3/06 ,  H01S3/16 ,  H01L33/00

CPC classification number: H01S3/0627 ,  H01S3/0604 ,  H01S3/0635 ,  H01S3/16 ,  H01S3/1611 ,  H01S3/165 ,  H01S5/026 ,  H01S5/041 ,  H01S5/183 ,  H01S5/3227

Abstract: A silicon-based microlaser formed of rare-earth-doped CaF₂ thin films has a semiconductor substrate material (2.40) and a CaF₂ film layers (234) grown on semiconductor substrate material (240). The CaF₂ film layer (234) is doped with a predetermined amount of rare-earth-dopant that is sufficient to cause a spectral emission from the CaF₂ film layer (234) having a narrow linewidth when the CaF₂ film layer (234) is optically or electrically pumped.

Abstract translation: 由稀土掺杂的CaF 2薄膜形成的硅基微激光器具有在半导体衬底材料（240）上生长的半导体衬底材料（2.40）和CaF 2膜层（234）。 当CaF 2膜层（234）在光学上时，CaF 2膜层（234）掺杂有预定量的稀土掺杂剂，其足以引起具有窄线宽的CaF 2膜层（234）的光谱发射 电泵。

公开(公告)号：EP0550888A2

公开(公告)日：1993-07-14

申请号：EP92121937.4

申请日：1992-12-23

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Cho, Chih-Chen ,  Gnade, Bruce E.

IPC: H01L21/285 ,  H01L21/90 ,  C30B23/02 ,  H01L29/40

CPC classification number: H01L23/53214 ,  C30B23/02 ,  C30B29/02 ,  H01L21/2855 ,  H01L21/32051 ,  H01L21/76879 ,  H01L2924/0002 ,  Y10S438/906 ,  H01L2924/00

Abstract: A method for forming single crystal aluminum films 14 on the surface of a substrate 12 (e.g. silicon {111} or Si{111}) is presented, comprising the steps of cleaning the substrate, then maintaining the substrate at certain temperature and pressure conditions while electrically neutral aluminum is deposited by a vacuum evaporation technique. Novel structures wherein single crystal aluminum contacts 20 fill via holes 18 in insulating layers 16 are presented. Novel structures wherein a single crystal aluminum film 14 exists on a substrate comprised of more than one crystalline material 12 , 22 are presented.

Abstract translation: 提出了在衬底12（例如硅{111}或Si {111}）的表面上形成单晶铝膜14的方法，包括清洁衬底，然后将衬底保持在特定温度和压力条件的步骤，同时 电中性铝通过真空蒸发技术沉积。 呈现了其中单晶铝触点20通过绝缘层16中的孔18填充的新型结构。 提出了在由多于一种的结晶材料12,22构成的衬底上存在单晶铝膜14的新型结构。

公开(公告)号：EP0899779A3

公开(公告)日：2000-01-12

申请号：EP98306924.6

申请日：1998-08-28

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Lu, Jiong-Ping ,  Cho, Chih-Chen

IPC: H01L21/285 ,  H01L21/768

CPC classification number: H01L21/76855 ,  C23C16/08 ,  C23C16/16 ,  H01L21/76843 ,  Y10S438/927

Abstract: In order to provide a thermally stable diffusion barrier for a contact, a layer of titanium (11) is formed on the patterned substrate (10). A layer of tungsten nitride (12) is formed on the titanium layer (11). After an annealing step, an interfacial layer (11') and a layer of titanium nitride (12') are formed between the substrate (10) and a tungsten layer (13'). These layers provide a diffusion barrier which is more thermally stable than a titanium nitride layer applied directly on the substrate and which permits the formation of a contact structures that can withstand subsequent high temperature steps.

Abstract translation: 为了提供用于接触的热稳定的扩散阻挡层，在图案化的衬底（10）上形成一层钛（11）。 在钛层（11）上形成氮化钨层（12）。 在退火步骤之后，在衬底（10）和钨层（13'）之间形成界面层（11'）和氮化钛层（12'）。 这些层提供了比直接施加在基底上的氮化钛层更加热稳定的扩散阻挡层，并且允许形成能够承受随后的高温步骤的接触结构。

公开(公告)号：EP0899779A2

公开(公告)日：1999-03-03

申请号：EP98306924.6

申请日：1998-08-28

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Lu, Jiong-Ping ,  Cho, Chih-Chen

IPC: H01L21/285

CPC classification number: H01L21/76855 ,  C23C16/08 ,  C23C16/16 ,  H01L21/76843 ,  Y10S438/927

Abstract: In order to provide a thermally stable diffusion barrier for a contact, a layer of titanium (11) is formed on the patterned substrate (10). A layer of tungsten nitride (12) is formed on the titanium layer (11). After an annealing step, an interfacial layer (11') and a layer of titanium nitride (12') are formed between the substrate (10) and a tungsten layer (13'). These layers provide a diffusion barrier which is more thermally stable than a titanium nitride layer applied directly on the substrate and which permits the formation of a contact structures that can withstand subsequent high temperature steps.

公开(公告)号：EP0727817A2

公开(公告)日：1996-08-21

申请号：EP96102370.2

申请日：1996-02-16

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Cho, Chih-Chen

IPC: H01L21/316

CPC classification number: H01L21/02134 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/3124

Abstract: A modified hydrogen silsesquioxane (HSQ) precursor is disclosed, along with methods for depositing such a precursor on a semiconductor substrate and a semiconductor device having a dielectric thin film deposited from such a precursor. The method comprises coating a semiconductor substrate 10, which typically comprises conductors 12, with a film of a modified HSQ film precursor. The HSQ film precursor comprises a hydrogen silsesquioxane resin and a modifying agent, preferably selected from the group consisting of alkyl alkoxysilanes, fluorinated alkyl alkoxysilanes, and combinations thereof. The method further comprises curing film 14, wherein the inclusion of the modifying agent inhibits oxidation and/or water absorption by the film during and/or after curing. It is believed that the modifying agent modifies film surface 16 to produce this effect. Films produced according to the present invention apparently have repeatable dielectric properties for drying and curing conditions which produced widely varying properties for unmodified films.

Abstract translation: 公开了改进的氢倍半硅氧烷（HSQ）前体，以及用于在半导体衬底上沉积这种前体的方法以及具有由这种前体沉积的电介质薄膜的半导体器件。 该方法包括将通常包括导体12的半导体衬底10与改性的HSQ膜前体的膜一起涂覆。 HSQ膜前体包含氢倍半硅氧烷树脂和改性剂，优选选自烷基烷氧基硅烷，氟化烷基烷氧基硅烷及其组合。 该方法还包括固化膜14，其中包含改性剂在固化期间和/或固化后抑制膜的氧化和/或吸水。 认为改性剂改性膜表面16以产生这种效果。 根据本发明生产的薄膜显然具有用于干燥和固化条件的可重复介电性能，其对未改性膜产生广泛变化的性质。

公开(公告)号：EP0697741A1

公开(公告)日：1996-02-21

申请号：EP95305691.8

申请日：1995-08-15

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Browkaert, Tom P.E. ,  Seabaugh, Alan C. ,  Cho, Chih-Chen

IPC: H01L29/88

CPC classification number: B82Y10/00 ,  B82Y30/00 ,  H01L29/882

Abstract: A resonant tunneling diode (400) made of a quantum well (406) with tunneling barriers (404, 408) made of two different materials such as calcium fluoride (408) and silicon dioxide (404). The calcium fluoride provides lattice match between the emitter (410) and the quantum well (406). Further resonant tunneling diodes with silicon lattice match barriers may be made of III-V compounds containing nitrogen.

Abstract translation: 由量子阱（406）制成的谐振隧道二极管（400），其具有由诸如氟化钙（408）和二氧化硅（404）的两种不同材料制成的隧穿势垒（404,408）。 氟化钙在发射极（410）和量子阱（406）之间提供晶格匹配。 具有硅晶格匹配屏障的其它谐振隧道二极管可以由含有氮的III-V化合物制成。 $$