公开(公告)号：EP0651447A1

公开(公告)日：1995-05-03

申请号：EP94116816.3

申请日：1994-10-25

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Seabaugh, Alan C.

IPC: H01L29/88 ,  H01L21/329

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  H01L29/66151 ,  H01L29/882

Abstract: A resonant tunneling diode (400) made of a silicon quantum well (406) with silicon oxide tunneling barriers (404, 408). The tunneling barriers have openings (430) of size smaller than the electron wave packet spread to insure crystal alignment through the diode without affecting the tunneling barrier height.

Abstract translation: 由硅量子阱（406）与氧化硅隧道势垒（404,408）制成的谐振隧穿二极管（400）。 隧道势垒具有小于电子波包扩展的开口（430），以确保通过二极管的晶体取向而不影响隧道势垒高度。

公开(公告)号：EP0774839A2

公开(公告)日：1997-05-21

申请号：EP96116660.0

申请日：1996-10-17

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Seabaugh, Alan C. ,  Taddiken, Albert H. ,  Obeid, Iyad

IPC: H03M5/16

CPC classification number: B82Y10/00 ,  H03M5/16

Abstract: A circuit that can form the core element for analog-to-digital convertors and multi-valued to binary converter circuits is disclosed. The circuit has an input transistor 20 coupled to receive an input signal V IN . A first negative-resistance element 22, RTD couples between the output electrode V OUT of the input transistor 20 and a positive voltage source. A second negative-resistance element 3RTD couples between the input transistor 20 and ground. The peak to valley current ratio of the first negative-resistance element 22,RTD is selected to be less than the peak to valley current ratio of the second negative-resistance element 3RTD. The circuit functions to convert inputs at varying voltages (multi-valued) to two levels at the output V OUT .

Abstract translation: 公开了可以形成模数转换器和多值二进制转换器电路的核心元件的电路。 该电路具有耦合以接收输入信号VIN的输入晶体管20。 第一负电阻元件22，RTD耦合在输入晶体管20的输出电极VOUT和正电压源之间。 第二负电阻元件3RTD耦合在输入晶体管20和地之间。 选择第一负电阻元件22，RTD的峰谷电流比小于第二负电阻元件3RTD的峰谷电流比。 该电路用于将输入电压（多值）转换为输出VOUT上的两个电平。

公开(公告)号：EP0774839A3

公开(公告)日：1999-08-25

申请号：EP96116660.0

申请日：1996-10-17

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Seabaugh, Alan C. ,  Taddiken, Albert H. ,  Obeid, Iyad

IPC: H03M5/16

CPC classification number: B82Y10/00 ,  H03M5/16

Abstract: A circuit that can form the core element for analog-to-digital convertors and multi-valued to binary converter circuits is disclosed. The circuit has an input transistor 20 coupled to receive an input signal V IN . A first negative-resistance element 22, RTD couples between the output electrode V OUT of the input transistor 20 and a positive voltage source. A second negative-resistance element 3RTD couples between the input transistor 20 and ground. The peak to valley current ratio of the first negative-resistance element 22,RTD is selected to be less than the peak to valley current ratio of the second negative-resistance element 3RTD. The circuit functions to convert inputs at varying voltages (multi-valued) to two levels at the output V OUT .

公开(公告)号：EP0508463A3

公开(公告)日：1993-02-03

申请号：EP92106256.8

申请日：1992-04-10

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Kao, Yung-Chung ,  Liu, Hung-Yu ,  Seabaugh, Alan C. ,  Luscombe, James H.

IPC: H01L21/20 ,  H01L29/12 ,  C30B23/02

CPC classification number: B82Y10/00 ,  C30B23/002 ,  C30B23/02 ,  C30B29/68 ,  H01L21/0237 ,  H01L21/02392 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  Y10S438/925

Abstract: This invention describes any multi-deposition system, whereby directing elemental or molecular source fluxes across a substrate in an asymmetrical manner and rotating the substrate at low rotation speeds, a superlattice is formed having a composition of A(x-_x)B(1-(x-_x))/A(x+_x)B(1-(x+_x) where _x is a function of the nonuniform focusing of the elemental or molecular source fluxes A and B. More specifically, superlattices 18 are formed in the ternary and quaternary In(GaAl)As alloys on InP by molecular beam epitaxy without mechanical shuttering. The superlattice 18 is formed by nonuniformly directing the group III elements 22 and 24 onto the substrate 26 and rotating the substrate 26 across the beams. Periodic ordering is produced by rotation of the substrate 26 through a nonuniform distribution of source fluxes at the rotating substrate 26 . The growth rate and substrate rotation rate together determine the superlattice period. Other devices, systems and methods are also disclosed.

公开(公告)号：EP0697741A1

公开(公告)日：1996-02-21

申请号：EP95305691.8

申请日：1995-08-15

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Browkaert, Tom P.E. ,  Seabaugh, Alan C. ,  Cho, Chih-Chen

IPC: H01L29/88

CPC classification number: B82Y10/00 ,  B82Y30/00 ,  H01L29/882

Abstract: A resonant tunneling diode (400) made of a quantum well (406) with tunneling barriers (404, 408) made of two different materials such as calcium fluoride (408) and silicon dioxide (404). The calcium fluoride provides lattice match between the emitter (410) and the quantum well (406). Further resonant tunneling diodes with silicon lattice match barriers may be made of III-V compounds containing nitrogen.

Abstract translation: 由量子阱（406）制成的谐振隧道二极管（400），其具有由诸如氟化钙（408）和二氧化硅（404）的两种不同材料制成的隧穿势垒（404,408）。 氟化钙在发射极（410）和量子阱（406）之间提供晶格匹配。 具有硅晶格匹配屏障的其它谐振隧道二极管可以由含有氮的III-V化合物制成。 $$

公开(公告)号：EP0596691A3

公开(公告)日：1994-07-27

申请号：EP93308733.0

申请日：1993-11-02

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Frazier, Gary A. ,  Seabaugh, Alan C.

IPC: H03K19/082 ,  H03K19/094 ,  H03K19/10

CPC classification number: B82Y10/00 ,  H03K19/082 ,  H03K19/212 ,  H03M5/20

Abstract: A multi-function resonant tunneling logic gate is provided in which a resonant tunneling transistor (12) includes a first terminal, a second terminal, and a third terminal. A plurality of signal inputs are coupled to the first terminal of the resonant tunneling transistor (12) through a summer (10). Furthermore, a biasing input is operable to apply a bias to the first terminal of resonant tunneling transistor (12) such that the transfer characteristic of the resonant tunneling transistor (12) can be shifted relative to the signal inputs.

公开(公告)号：EP0596691A2

公开(公告)日：1994-05-11

申请号：EP93308733.0

申请日：1993-11-02

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Frazier, Gary A. ,  Seabaugh, Alan C.

IPC: H03K19/082 ,  H03K19/094 ,  H03K19/10

CPC classification number: B82Y10/00 ,  H03K19/082 ,  H03K19/212 ,  H03M5/20

Abstract: A multi-function resonant tunneling logic gate is provided in which a resonant tunneling transistor (12) includes a first terminal, a second terminal, and a third terminal. A plurality of signal inputs are coupled to the first terminal of the resonant tunneling transistor (12) through a summer (10). Furthermore, a biasing input is operable to apply a bias to the first terminal of resonant tunneling transistor (12) such that the transfer characteristic of the resonant tunneling transistor (12) can be shifted relative to the signal inputs.

Abstract translation: 的多功能谐振隧穿逻辑门是在其中提供了一种谐振隧穿晶体管（12）包括第一端子，第二端子和第三端子。 的信号输入的多个被耦合到通过夏季（10）的共振隧穿晶体管（12）的第一端子。 进一步，一个偏压输入可操作来施加偏置到谐振隧穿晶体管（12）的第一端子检查做的共振隧穿晶体管（12）的传递特性可相对于信号输入移位。

公开(公告)号：EP0651447B1

公开(公告)日：1997-07-30

申请号：EP94116816.3

申请日：1994-10-25

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Seabaugh, Alan C.

IPC: H01L29/88 ,  H01L21/329

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  H01L29/66151 ,  H01L29/882

公开(公告)号：EP0508463B1

公开(公告)日：1997-07-02

申请号：EP92106256.8

申请日：1992-04-10

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Kao, Yung-Chung ,  Liu, Hung-Yu ,  Seabaugh, Alan C. ,  Luscombe, James H.

IPC: H01L21/20 ,  H01L29/12 ,  C30B23/02

CPC classification number: B82Y10/00 ,  C30B23/002 ,  C30B23/02 ,  C30B29/68 ,  H01L21/0237 ,  H01L21/02392 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  Y10S438/925

Abstract: This invention describes any multi-deposition system, whereby directing elemental or molecular source fluxes across a substrate in an asymmetrical manner and rotating the substrate at low rotation speeds, a superlattice is formed having a composition of A(x-_x)B(1-(x-_x))/A(x+_x)B(1-(x+_x) where _x is a function of the nonuniform focusing of the elemental or molecular source fluxes A and B. More specifically, superlattices 18 are formed in the ternary and quaternary In(GaAl)As alloys on InP by molecular beam epitaxy without mechanical shuttering. The superlattice 18 is formed by nonuniformly directing the group III elements 22 and 24 onto the substrate 26 and rotating the substrate 26 across the beams. Periodic ordering is produced by rotation of the substrate 26 through a nonuniform distribution of source fluxes at the rotating substrate 26. The growth rate and substrate rotation rate together determine the superlattice period. Other devices, systems and methods are also disclosed.

公开(公告)号：EP0508463A2

公开(公告)日：1992-10-14

申请号：EP92106256.8

申请日：1992-04-10

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Kao, Yung-Chung ,  Liu, Hung-Yu ,  Seabaugh, Alan C. ,  Luscombe, James H.

IPC: H01L21/20 ,  H01L29/12 ,  C30B23/02

CPC classification number: B82Y10/00 ,  C30B23/002 ,  C30B23/02 ,  C30B29/68 ,  H01L21/0237 ,  H01L21/02392 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  Y10S438/925

Abstract: This invention describes any multi-deposition system, whereby directing elemental or molecular source fluxes across a substrate in an asymmetrical manner and rotating the substrate at low rotation speeds, a superlattice is formed having a composition of A(x-_x)B(1-(x-_x))/A(x+_x)B(1-(x+_x) where _x is a function of the nonuniform focusing of the elemental or molecular source fluxes A and B.
More specifically, superlattices 18 are formed in the ternary and quaternary In(GaAl)As alloys on InP by molecular beam epitaxy without mechanical shuttering. The superlattice 18 is formed by nonuniformly directing the group III elements 22 and 24 onto the substrate 26 and rotating the substrate 26 across the beams. Periodic ordering is produced by rotation of the substrate 26 through a nonuniform distribution of source fluxes at the rotating substrate 26 . The growth rate and substrate rotation rate together determine the superlattice period.
Other devices, systems and methods are also disclosed.

Abstract translation: 本发明描述了任何多沉积系统，其中以不对称的方式将元素或分子源通量引导到衬底上并以低转速旋转衬底，形成具有A（x-x）B（1- （x-_x））/ A（x + _x）B（1-（x + _x）其中_x是元素或分子源通量A和B的不均匀聚焦的函数。更具体地说，超晶格18形成 超晶格18通过不均匀地将III族元件22和24引导到衬底26上并且使衬底26跨越光束而形成，定期地排列在InP上的三元和四元In（GaAl） 通过旋转基板26上的源极通量的不均匀分布来使衬底26旋转而产生。生长速率和衬底旋转率一起确定了超晶格周期，还公开了其它器件，系统和方法。 MAGE>