THROUGH-SUBSTRATE CONDUCTOR SUPPORT
    1.
    发明申请

    公开(公告)号:US20190382262A1

    公开(公告)日:2019-12-19

    申请号:US16551108

    申请日:2019-08-26

    Abstract: In described examples, a first device on a first surface of a substrate is coupled to a structure arranged on a second surface of the substrate. In at least one example, a first conductor arranged on the first surface is coupled to circuitry of the first device. An elevated portion of the first conductor is supported by disposing an encapsulate and curing the encapsulate. The first conductor is severed by cutting the encapsulate and the first conductor. A second conductor is coupled to the first conductor. The second conductor is coupled to the structure arranged on the second surface of the substrate.

    Through-substrate conductor support

    公开(公告)号:US11084717B2

    公开(公告)日:2021-08-10

    申请号:US16551108

    申请日:2019-08-26

    Abstract: In described examples, a first device on a first surface of a substrate is coupled to a structure arranged on a second surface of the substrate. In at least one example, a first conductor arranged on the first surface is coupled to circuitry of the first device. An elevated portion of the first conductor is supported by disposing an encapsulate and curing the encapsulate. The first conductor is severed by cutting the encapsulate and the first conductor. A second conductor is coupled to the first conductor. The second conductor is coupled to the structure arranged on the second surface of the substrate.

    THROUGH-SUBSTRATE CONDUCTOR SUPPORT

    公开(公告)号:US20210323816A1

    公开(公告)日:2021-10-21

    申请号:US17365067

    申请日:2021-07-01

    Abstract: In described examples, a first device on a first surface of a substrate is coupled to a structure arranged on a second surface of the substrate. In at least one example, a first conductor arranged on the first surface is coupled to circuitry of the first device. An elevated portion of the first conductor is supported by disposing an encapsulate and curing the encapsulate. The first conductor is severed by cutting the encapsulate and the first conductor. A second conductor is coupled to the first conductor. The second conductor is coupled to the structure arranged on the second surface of the substrate.

    Hermetically sealed MEMS device and its fabrication

    公开(公告)号:US10427932B2

    公开(公告)日:2019-10-01

    申请号:US15879212

    申请日:2018-01-24

    Abstract: In described examples, a hermetic package of a microelectromechanical system (MEMS) structure includes a substrate having a surface with a MEMS structure of a first height. The substrate is hermetically sealed to a cap forming a cavity over the MEMS structure. The cap is attached to the substrate surface by a vertical stack of metal layers adhering to the substrate surface and to the cap. The stack has a continuous outline surrounding the MEMS structure while spaced from the MEMS structure by a distance. The stack has: a first bottom metal seed film adhering to the substrate and a second bottom metal seed film adhering to the first bottom metal seed film; and a first top metal seed film adhering to the cap and a second top metal seed film adhering to the first top metal seed film.

    Through-substrate conductor support

    公开(公告)号:US10392246B2

    公开(公告)日:2019-08-27

    申请号:US15433704

    申请日:2017-02-15

    Abstract: In described examples, a first device on a first surface of a substrate is coupled to a structure arranged on a second surface of the substrate. In at least one example, a first conductor arranged on the first surface is coupled to circuitry of the first device. An elevated portion of the first conductor is supported by disposing an encapsulate and curing the encapsulate. The first conductor is severed by cutting the encapsulate and the first conductor. A second conductor is coupled to the first conductor. The second conductor is coupled to the structure arranged on the second surface of the substrate.

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