公开(公告)号：EP0754958A3

公开(公告)日：1998-03-11

申请号：EP96111687.8

申请日：1996-07-19

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Knipe, Richard L. ,  Webb, Douglas A.

IPC: G02B26/08 ,  G02B7/18

CPC classification number: G02B26/0841

Abstract: A non-linear torsion hinge (12, 22) for a micro-mechanical device (10, 20) having a hinged movable element (11, 21). Each hinge (22) is comprised of two hinge strips (22a) spaced apart in the same plane, such that the axis of rotation of at least one of the hinge strips (22a) is different from the axis of rotation of the movable element ( 21). As a result, the hinge strip (22a) must elongate as it twists, thereby providing a greater restoring torque.

公开(公告)号：EP0366013A3

公开(公告)日：1990-06-27

申请号：EP89119494.6

申请日：1989-10-20

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Frederick, Gene R. ,  Webb, Douglas A. ,  Lane, Andrew P. ,  Camp, Janet P.

IPC: H01L21/311 ,  H01L21/316

CPC classification number: H01L21/02164 ,  H01L21/0217 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/31111 ,  H01L21/31612 ,  H01L21/3185 ,  H01L21/743 ,  H01L21/76229 ,  H01L21/76232

Abstract: A wafer having an integrated circuit subassembly (26) is provided having a first trench (28) and second trench (30). The first trench (28) includes angled non-vertical surfaces (34). The second trench (30) includes vertical surfaces (38) and lower non-vertical surface (40). A dielectric layer (22) is deposited along surfaces of subassembly 26, and then etched such that only layers 22 overlying non-vertical surfaces remain.

公开(公告)号：EP0754958A2

公开(公告)日：1997-01-22

申请号：EP96111687.8

申请日：1996-07-19

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Knipe, Richard L. ,  Webb, Douglas A.

IPC: G02B26/08 ,  G02B7/18

CPC classification number: G02B26/0841

Abstract: A non-linear torsion hinge (12, 22) for a micro-mechanical device (10, 20) having a hinged movable element (11, 21). Each hinge (22) is comprised of two hinge strips (22a) spaced apart in the same plane, such that the axis of rotation of at least one of the hinge strips (22a) is different from the axis of rotation of the movable element ( 21). As a result, the hinge strip (22a) must elongate as it twists, thereby providing a greater restoring torque.

Abstract translation: 一种用于具有铰接的可移动元件（11,21）的微机械装置（10,20）的非线性扭转铰链（12,22）。 每个铰链（22）由在相同平面中间隔开的两个铰链条（22a）组成，使得至少一个铰链条（22a）的旋转轴线不同于可移动元件的旋转轴线（ 21）。 结果，铰链条（22a）在其扭转时必须伸长，从而提供更大的恢复扭矩。

公开(公告)号：EP0429809A2

公开(公告)日：1991-06-05

申请号：EP90119395.3

申请日：1990-10-10

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Loewenstein, Lee M. ,  Webb, Douglas A.

IPC: H01L21/00

CPC classification number: H01L21/67069 ,  H01J37/32357 ,  H01L21/3065 ,  H01L21/31116

Abstract: An apparatus and method for the etching of semiconductor materials (14) is disclosed. The apparatus (10) includes a process chamber (12) having a remote generator (16) in fluid communication with the process chamber (12) for converting a noble gas (34) to a metastable gas (36). An etchant gas (40) is subsequently brought into the chamber (12) adjacent to the material (14), to mix and react with the metastable gas (36) at activation zone (38). The metastable gas (36) collides with the etchant gas (40) to cause the mixture to selectively etch the material 14.

Abstract translation: 公开了一种用于蚀刻半导体材料（14）的设备和方法。 装置（10）包括具有与处理室（12）流体连通的用于将惰性气体（34）转化成亚稳态气体（36）的远程发生器（16）的处理室（12）。 随后将蚀刻剂气体（40）引入与材料（14）相邻的室（12）中，以在活化区（38）处与亚稳态气体（36）混合和反应。 亚稳态气体（36）与蚀刻剂气体（40）碰撞以使混合物选择性地蚀刻材料14。

公开(公告)号：EP0366013A2

公开(公告)日：1990-05-02

申请号：EP89119494.6

申请日：1989-10-20

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Frederick, Gene R. ,  Webb, Douglas A. ,  Lane, Andrew P. ,  Camp, Janet P.

IPC: H01L21/311 ,  H01L21/316

CPC classification number: H01L21/02164 ,  H01L21/0217 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/31111 ,  H01L21/31612 ,  H01L21/3185 ,  H01L21/743 ,  H01L21/76229 ,  H01L21/76232

Abstract: A wafer having an integrated circuit subassembly (26) is provided having a first trench (28) and second trench (30). The first trench (28) includes angled non-vertical surfaces (34). The second trench (30) includes vertical surfaces (38) and lower non-vertical surface (40). A dielectric layer (22) is deposited along surfaces of subassembly 26, and then etched such that only layers 22 overlying non-vertical surfaces remain.

Abstract translation: 提供具有集成电路子组件（26）的晶片，其具有第一沟槽（28）和第二沟槽（30）。 第一沟槽（28）包括成角度的非垂直表面（34）。 第二沟槽（30）包括垂直表面（38）和下部非垂直表面（40）。 电介质层（22）沿着子组件26的表面沉积，然后被蚀刻，使得仅覆盖非垂直表面的层22保留。

公开(公告)号：EP0690330A1

公开(公告)日：1996-01-03

申请号：EP95110149.2

申请日：1995-06-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Wallace, Robert M. ,  Gnade, Bruce E. ,  Webb, Douglas A.

IPC: G02B26/08 ,  H01H1/00

CPC classification number: B81C1/0096 ,  B81B3/0005 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G02B26/0841 ,  H01H1/0036

Abstract: A method of forming of a monomolecular layer (monolayer) (19) for surfaces of contacting elements (17) of a micro-mechanical device (10). The method includes providing a coordinating substance on the surface of one of the contacting elements (13), then depositing a precursor substance (51) for formation of the monolayer (19). The coordinating substance (33) and the precursor substance (51) are chosen based on molecular recognition chemistry.

Abstract translation: 形成用于微机械装置（10）的接触元件（17）的表面的单分子层（单层）（19）的方法。 该方法包括在一个接触元件（13）的表面上提供配位物质，然后沉积用于形成单层（19）的前体物质（51）。 基于分子识别化学选择配位物质（33）和前体物质（51）。 $$

公开(公告)号：EP0367004B1

公开(公告)日：1993-12-15

申请号：EP89119151.2

申请日：1989-10-16

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Lane, Andrew P. ,  Frederick, Gene R. ,  Webb, Douglas A.

IPC: C23C16/40 ,  H01L21/316

CPC classification number: C23C16/402 ,  Y10S148/114 ,  Y10S148/118

公开(公告)号：EP0429809A3

公开(公告)日：1991-07-31

申请号：EP90119395.3

申请日：1990-10-10

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Loewenstein, Lee M. ,  Webb, Douglas A.

IPC: H01L21/00

CPC classification number: H01L21/67069 ,  H01J37/32357 ,  H01L21/3065 ,  H01L21/31116

Abstract: An apparatus and method for the etching of semiconductor materials (14) is disclosed. The apparatus (10) includes a process chamber (12) having a remote generator (16) in fluid communication with the process chamber (12) for converting a noble gas (34) to a metastable gas (36). An etchant gas (40) is subsequently brought into the chamber (12) adjacent to the material (14), to mix and react with the metastable gas (36) at activation zone (38). The metastable gas (36) collides with the etchant gas (40) to cause the mixture to selectively etch the material 14.

公开(公告)号：EP0367004A1

公开(公告)日：1990-05-09

申请号：EP89119151.2

申请日：1989-10-16

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Lane, Andrew P. ,  Frederick, Gene R. ,  Webb, Douglas A.

IPC: C23C16/40 ,  H01L21/316

CPC classification number: C23C16/402 ,  Y10S148/114 ,  Y10S148/118

Abstract: In a low-pressure reactor, the addition of nitrogen trifluoride to a gaseous organosilicon compound such as tetraethoxysilane (TEOS) or tetramethylcyclotetroxysilane (TMCTS) results in surprisingly enhanced silicon dioxide deposition rates. The oxide deposited using this process also has the capability of filling features having aspects ratios up to at least 1.0, and may exhibit low mobile ion concentrations. The process is also applicable for depositing other silicon-containing films such as polysilicon and silicon nitride.

Abstract translation: 在低压反应器中，加入三氟化氮为气态有机硅化合物：如四乙氧基硅烷（TEOS）或硅氧烷（TMCTS）的结果令人惊奇地tetramethylcyclotetroxysilane增强二氧化硅的沉积速率。 使用这种方法将析出的氧化物具有填充具有高达至少1.0方面比特征的能力，并且可以表现出低的移动离子浓度。 该过程因此适用于沉积其它含硅薄膜：如多晶硅和氮化硅。