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1.
公开(公告)号:US20230033082A1
公开(公告)日:2023-02-02
申请号:US17389619
申请日:2021-07-30
Applicant: Texas Instruments Incorporated
Inventor: Ting-Ta YEN , Yao YU , Hassan Omar ALI
Abstract: A circuit includes a semiconductor substrate and an integrated passive device. The integrated passive device is on a surface of the semiconductor substrate. The integrated passive device is in a metal layer on the semiconductor substrate. The metal layer is at least tens of micrometers thick. The integrated passive device may be an inductor or a capacitor in some examples.
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公开(公告)号:US20240002216A1
公开(公告)日:2024-01-04
申请号:US17854457
申请日:2022-06-30
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Hakhamanesh MANSOORZARE , Ting-Ta YEN , Yao YU
CPC classification number: B81B3/0021 , B81B7/02 , B81B3/0051 , B81B2201/0271 , B81B2203/0109 , B81B2203/0163 , B81B2203/0307 , B81B2203/0315 , B81B2203/033
Abstract: A circuit includes: integrated circuit (IC) layers; a cavity formed in at least one of the IC layers; and a micro-acoustic resonator suspended in the cavity by an anchor. The anchor includes: a bridge portion coupled to the micro-acoustic resonator and extending over the cavity; a first acoustic reflector portion adjacent the bridge portion, extending over the cavity, and oriented differently than the bridge portion; and a second acoustic reflector portion adjacent the first acoustic reflector portion, extending over the cavity, and oriented differently than the first acoustic reflector portion.
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