公开(公告)号：US11366946B2

公开(公告)日：2022-06-21

申请号：US16646573

申请日：2018-08-09

Applicant: THE INSTITUTE OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES

Inventor： Nianduan Lu ,  Ling Li ,  Ming Liu

IPC: G06F30/27 ,  G06F16/23 ,  G06N3/08 ,  G06F111/10

Abstract: The present disclosure provides a method and an apparatus for obtaining surface potential. The method comprises: obtaining parameter information of multiple target devices, wherein the parameter information includes: size, device structure, material parameter, and carrier mobility of each of the target devices at different temperatures, and the multiple target devices include: devices fabricated by using conventional materials and devices fabricated by using first new materials whose surface potentials have been determined, and the conventional materials include bulk materials and the first new materials include thin film materials; extracting surface potentials based on the size, the device structure, the material parameter and the mobility of each of the target devices under corresponding operating conditions; establishing a surface potential database based on the surface potentials and the parameter information; constructing a surface potential analytical model according to neural network based on the surface potential database; and determining the surface potential of a device fabricated by using a second new material by using the surface potential analytical model.

公开(公告)号：US11010530B2

公开(公告)日：2021-05-18

申请号：US16647027

申请日：2018-08-09

Applicant: THE INSTITUTE OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES

Inventor： Nianduan Lu ,  Ling Li ,  Ming Liu ,  Qi Liu

IPC: G06F30/398 ,  G06F16/903 ,  G06F113/26 ,  H01L45/00

Abstract: The disclosure provides a method and apparatus for designing a resistive random access memory, and the method comprise: receiving a preset first parameter standard of a resistive switching material, searching for and outputting a first resistive switching material based on the first parameter standard, first parameters including: band gap, charge transfer, vacancy, migration barrier, carrier activation energy. Schottky barrier and number of mesophase: establishing a resistive switching material database according to the first resistive switching materials; receiving a second parameter standard for a resistive random access memory device model, and selecting a second resistive switching material from the resistive switching material database according to the second parameter standard, second parameters including: Forming voltage, SET voltage, RESET voltage, erasing and writing speed, power consumption, storage window, stability, durability, on-off ratio, fluctuation of current parameter and storage density of the device model; and designing a resistive random access memory by using the second resistive switching material, corresponding electrode material, and a predetermined storage structure.