公开(公告)号：US20160259876A1

公开(公告)日：2016-09-08

申请号：US14403938

申请日：2014-04-25

Applicant: THE INSTITUTE OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES

Inventor： Jianhui Bu ,  Shuzhen Li ,  Jiajun Luo ,  Zhengsheng Han

IPC: G06F17/50

CPC classification number: G06F17/5068 ,  G06F17/5009 ,  G06F17/5063 ,  G06F2217/80

Abstract: The invention discloses an STI stress effect modeling method and device of an MOS device, and belongs to the technical field of parameter extraction modeling of devices. The method comprises the following steps: introducing the influence of temperature parameters on the STI stress effect of the MOS device, so as to form a function showing that the STI stress effect of the MOS device changes along with the temperature parameters; extracting the model parameter Model1 of the MOS device at normal temperature; on the basis of the Model1, extracting the parameter Model2 that the STI stress affects the properties of the MOS device at normal temperature; and on the basis of the Model2, extracting fitting parameters of the MOS device in the function so as to acquire final model parameters. The device comprises a first module, a second module, a third module and a fourth module. By establishing the function showing that the STI stress effect of the MOS device changes along with the temperature parameters, the influence of the temperature on the STI stress effect of the MOS device can be accurately described, so that the extracted model parameters are more accurate and reliable.

Abstract translation: 本发明公开了一种MOS器件的STI应力效应建模方法及装置，属于器件参数提取建模技术领域。 该方法包括以下步骤：引入温度参数对MOS器件的STI应力影响的影响，形成MOS器件的STI应力效应随温度参数变化的函数; 在常温下提取MOS器件的Model1型号; 在Model1的基础上，提取STI应力影响常温下MOS器件特性的参数Model2; 并在Model2的基础上，提取功能中MOS器件的拟合参数，以获得最终的模型参数。 该装置包括第一模块，第二模块，第三模块和第四模块。 通过建立显示MOS器件的STI应力效应随温度参数变化的功能，可以准确地描述温度对MOS器件的STI应力影响的影响，从而提取模型参数更准确， 可靠。

公开(公告)号：US10176287B2

公开(公告)日：2019-01-08

申请号：US14403938

申请日：2014-04-25

Applicant: The Institute of Microelectronics of Chinese Academy of Sciences

Inventor： Jianhui Bu ,  Shuzhen Li ,  Jiajun Luo ,  Zhengsheng Han

IPC: G06F17/50

Abstract: The invention discloses an STI stress effect modeling method and device of an MOS device, and belongs to the technical field of parameter extraction modeling of devices. The method comprises the following steps: introducing the influence of temperature parameters on the STI stress effect of the MOS device, so as to form a function showing that the STI stress effect of the MOS device changes along with the temperature parameters; extracting the model parameter Model1 of the MOS device at normal temperature; on the basis of the Model1, extracting the parameter Model2 that the STI stress affects the properties of the MOS device at normal temperature; and on the basis of the Model2, extracting fitting parameters of the MOS device in the function so as to acquire final model parameters. The device comprises a first module, a second module, a third module and a fourth module. By establishing the function showing that the STI stress effect of the MOS device changes along with the temperature parameters, the influence of the temperature on the STI stress effect of the MOS device can be accurately described, so that the extracted model parameters are more accurate and reliable.