公开(公告)号：US20200299835A1

公开(公告)日：2020-09-24

申请号：US16815181

申请日：2020-03-11

Applicant: Tokyo Electron Limited

Inventor： Jun OGAWA ,  Hiroyuki WADA ,  Akihiro KURIBAYASHI ,  Takeshi OYAMA

IPC: C23C16/44 ,  C23C16/34

Abstract: A method of cleaning a deposition apparatus is provided. The method includes cleaning, with a cleaning gas formed into a plasma, an interior of a processing vessel on which a silicon nitride film is deposited. The cleaning gas includes a fluorine-containing gas and oxygen gas.

公开(公告)号：US20180355479A1

公开(公告)日：2018-12-13

申请号：US16001556

申请日：2018-06-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takayuki KARAKAWA ,  Jun OGAWA ,  Noriaki FUKIAGE ,  Yasuo KOBAYASHI

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01L21/02 ,  H01L21/67

CPC classification number: C23C16/4405 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/4584 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/67028

Abstract: A film forming apparatus is provided for forming a film by revolving a substrate placed on a rotary table in a vacuum container, alternately supplying a precursor gas and a reaction gas that reacts with the precursor gas to generate a reaction product multiple times, and depositing the reaction product on the substrate. The film forming apparatus comprises a precursor gas supply region that supplies the precursor gas onto the substrate, one or more plasma generation regions that generate plasma at a position apart from the precursor gas supply region in a rotational direction of the rotary table, and a cleaning region that cleans the rotary table by supplying a cleaning gas onto the rotary table in a region apart from the plasma generation regions and the precursor gas supply region in the rotational direction when a film forming process is not performed on the substrate.

公开(公告)号：US20180237914A1

公开(公告)日：2018-08-23

申请号：US15897209

申请日：2018-02-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun OGAWA ,  Noriaki FUKIAGE ,  Shimon OTSUKI ,  Muneyuki OTANI ,  Kentaro OSHIMO ,  Hideomi HANE

IPC: C23C16/455 ,  C23C16/513 ,  C23C16/458 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687

CPC classification number: C23C16/45544 ,  C23C16/45542 ,  C23C16/45551 ,  C23C16/45578 ,  C23C16/4584 ,  C23C16/511 ,  C23C16/513 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/32449 ,  H01J37/32513 ,  H01J37/32724 ,  H01J37/32752 ,  H01J37/32899 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/67017 ,  H01L21/68764 ,  H01L21/68771

Abstract: An apparatus for forming a nitride film of a raw material component on a substrate, includes: a raw material gas supply part having discharge ports that discharge a raw material gas and a purge gas, and an exhaust port; a reaction region spaced apart from the raw material gas supply part in a circumferential direction of a rotary table; a modification region spaced apart from the reaction region in the circumferential direction and in which the nitride film is modified with a hydrogen gas; a first plasma generating part provided in the modification region and a second plasma generating part provided in the reaction region, and for activating a gas existing in each of the modification and reaction regions; a reaction gas supply part for supplying the ammonia gas to the reaction region; and an exhaust port that evacuates an interior of the vacuum vessel.

公开(公告)号：US20180037992A1

公开(公告)日：2018-02-08

申请号：US15669444

申请日：2017-08-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki FUKIAGE ,  Takeshi OYAMA ,  Jun OGAWA

IPC: C23C16/455 ,  C23C16/52 ,  C23C16/34 ,  H01L21/02 ,  H01L21/687

CPC classification number: C23C16/45529 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45551 ,  C23C16/52 ,  H01L21/0217 ,  H01L21/02186 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/68764 ,  H01L21/68771

Abstract: A silicon nitride film forming method for forming a silicon nitride film on a substrate to be processed, includes forming a silicon nitride film doped with a predetermined amount of titanium by repeating, a predetermined number of times, forming a silicon nitride film by repeating, a first number of times, a process of causing a silicon source gas to be adsorbed onto the substrate and a process of nitriding the adsorbed silicon source gas with plasma of a nitriding gas, and forming a titanium nitride film by repeating, a second number of times, a process of causing a titanium source gas containing chlorine to be adsorbed onto the substrate and a process of nitriding the adsorbed titanium source gas with the plasma of the nitriding gas.

公开(公告)号：US20130213301A1

公开(公告)日：2013-08-22

申请号：US13848849

申请日：2013-03-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuhide HASEBE ,  Shigeru NAKAJIMA ,  Jun OGAWA ,  Hiroki MURAKAMI

IPC: H01L21/027

CPC classification number: H01L21/027 ,  C23C16/02 ,  C23C16/402 ,  C23C16/403 ,  C23C16/45536 ,  G03F7/40 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/31608 ,  H01L21/31616 ,  H01L21/32139 ,  H01L21/76816

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

Abstract translation: 在掩模图案形成方法中，在薄膜上形成抗蚀剂膜，通过光刻将抗蚀剂膜加工成具有预定间距的抗蚀剂图案，进行抗蚀剂图案的减薄，并且在薄膜上形成氧化膜 以及通过供给源气体和氧自由基或含氧气体在成膜装置中减肥步骤结束后的抗蚀剂图案。 在掩模图案形成方法中，在成膜装置中连续进行纤维化和氧化膜形成。

公开(公告)号：US20220084811A1

公开(公告)日：2022-03-17

申请号：US17468875

申请日：2021-09-08

Applicant: Tokyo Electron Limited

Inventor： Jun OGAWA ,  Takayuki KARAKAWA

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/34 ,  C23C16/511 ,  C23C16/458 ,  C23C16/455

Abstract: A deposition method for embedding a SiN film in a recessed pattern formed on a surface of a substrate includes: (a) activating and supplying a first process gas containing NH3 to the surface of the substrate and causing NHx groups to adsorb on the surface of the substrate, where x is 1 or 2; (b) supplying a silicon-containing gas to the surface of the substrate on which the NHx groups are adsorbed and causing the silicon-containing gas to adsorb on the NHx groups; and (c) activating and supplying a second process gas containing N2 to the surface of the substrate on which the NHx groups are adsorbed and partly replacing the NHx groups with N groups, wherein (a) and (b) are repeated, and (c) is performed every time (a) and (b) are repeated a predetermined number of times.

公开(公告)号：US20210130950A1

公开(公告)日：2021-05-06

申请号：US17086634

申请日：2020-11-02

Applicant: Tokyo Electron Limited

Inventor： Hideomi HANE ,  Takeshi OYAMA ,  Kentaro OSHIMO ,  Yusuke SUZUKI ,  Jun OGAWA

IPC: C23C16/44 ,  C23C16/511 ,  C23C16/455

Abstract: A processing method according to one aspect of the present disclosure includes varying pressure of a processing chamber in a state in which a plasma of a purge gas is formed in the processing chamber, the varying including removing a film deposited in the processing chamber, with the formed plasma.

公开(公告)号：US20190041756A1

公开(公告)日：2019-02-07

申请号：US16157461

申请日：2018-10-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuhide HASEBE ,  Shigeru NAKAJIMA ,  Jun OGAWA ,  Hiroki MURAKAMI

IPC: G03F7/40 ,  H01L21/027 ,  H01L21/768 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/033 ,  H01L21/02 ,  C23C16/455 ,  C23C16/40 ,  C23C16/02

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

公开(公告)号：US20150228473A1

公开(公告)日：2015-08-13

申请号：US14613541

申请日：2015-02-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuo YABE ,  Jun OGAWA

IPC: H01L21/02 ,  H01L49/02 ,  C23C16/455 ,  C23C16/52 ,  C23C16/44 ,  C23C16/46 ,  H01L21/28 ,  H01L29/51

CPC classification number: H01L21/0228 ,  C23C16/403 ,  C23C16/45523 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/02178 ,  H01L21/02337 ,  H01L21/28229 ,  H01L29/517

Abstract: A metal oxide film forming method includes: repeating a cycle a first predetermined number of times, the cycle including supplying a gas containing an organic metal precursor into a processing chamber where an object to be processed is accommodated, and supplying oxygen gas into the processing chamber after the gas containing the organic metal precursor is supplied into the processing chamber; and supplying ozone gas into the processing chamber, wherein repeating the cycle and supplying the ozone gas are repeated a second predetermined number of times, so that a metal oxide film is formed on a surface of the object to be processed.

Abstract translation: 金属氧化物膜形成方法包括：重复循环第一预定次数，该循环包括将含有有机金属前体的气体供给到被处理物体的处理室中，并将氧气供给到处理室 在含有有机金属前体的气体被供给到处理室中之后; 向所述处理室供给臭氧气体，其中重复所述循环和供给所述臭氧气体的步骤重复第二预定次数，使得在被处理物体的表面上形成金属氧化物膜。

公开(公告)号：US20140179120A1

公开(公告)日：2014-06-26

申请号：US14106926

申请日：2013-12-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun OGAWA

IPC: H01L21/02

CPC classification number: H01L21/02164 ,  C23C16/34 ,  C23C16/405 ,  C23C16/4551 ,  C23C16/45551 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/02312 ,  H01L21/02337

Abstract: A method of depositing a film of forming an oxide film containing a predetermined element on substrates using an apparatus including a turntable mounting substrates, first and second process areas above the upper surface of the turntable provided with gas supplying portions, a separation gas supplying portion between the first and second process areas, and a separation area including depositing the oxide film by rotating the turntable while supplying a reaction gas containing the predetermined element, the oxidation gas from the second gas supplying portion, and the separation gas; and rotating at least one turn while supplying the separation gas from the first gas supplying portion and the separation gas supplying portion, and the oxidation gas from the second gas supplying portion.

Abstract translation: 一种使用包括转台安装基板的设备在基板上形成含有预定元素的氧化物膜的膜的方法，设置有气体供应部分的转盘上表面之上的第一和第二处理区域，分离气体供应部分 第一处理区域和第二处理区域，以及分离区域，包括通过旋转转盘同时提供含有预定元素的反应气体，来自第二气体供给部分的氧化气体和分离气体来沉积氧化物膜; 并且在从第一气体供给部分和分离气体供应部分供应分离气体的同时旋转至少一圈，以及来自第二气体供应部分的氧化气体。