公开(公告)号：AU2003262407A1

公开(公告)日：2003-11-03

申请号：AU2003262407

申请日：2003-01-17

Applicant: TOKYO ELECTRON LTD

Inventor： HAGIWARA MASAAKI ,  NISHIMURA EIICHI ,  INAZAWA KOUICHIRO ,  HATAMURA YASUNORI ,  BALASUBRAMANIAM VAIDYANATHAN

IPC: H01L21/3065 ,  H01L21/00 ,  H01L21/302 ,  H01L21/304 ,  H01L21/31 ,  H01L21/461

Abstract: A method is provided for plasma ashing to remove photoresist remnants and etch residues that are formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving an hydrogen-containing gas, where low or zero bias is applied to the substrate in the first cleaning step to remove significant amount of photoresist remnants and etch residues from the substrate, in addition to etching and removing detrimental fluoro-carbon residues from the chamber surfaces. An increased bias is applied to the substrate in the second cleaning step to remove the remains of the photoresist and etch residues from the substrate. The two-step process reduces the memory effect commonly observed in conventional one-step ashing processes. A method of endpoint detection can be used to monitor the ashing process.

公开(公告)号：DE69733962D1

公开(公告)日：2005-09-15

申请号：DE69733962

申请日：1997-10-09

Applicant: TOKYO ELECTRON LTD

Inventor： YATSUDA KOICHI ,  NISHIARA TETSUYA ,  INAZAWA KOUICHIRO ,  OKAMOTO SHIN

IPC: H01L21/3065 ,  H01L21/311

Abstract: An etching gas is supplied into a process chamber (16) and turned into plasma so as to etch a silicon nitride film (12) arranged on a field silicon oxide film (4) on a wafer (w). A mixture gas containing at least CH2F2 gas and O2 gas is used as the etching gas. Parameters for planar uniformity, by which the etching apparatus is set in light of a set value of the planar uniformity, include the process pressure and the mixture ratio (CH2F2/O2) of the mixture gas. As the set value of the planar uniformity is more strict, either one of the process pressure and the mixture ratio is set higher.

公开(公告)号：DE69733962T2

公开(公告)日：2006-05-24

申请号：DE69733962

申请日：1997-10-09

Applicant: TOKYO ELECTRON LTD

Inventor： YATSUDA KOICHI ,  NISHIARA TETSUYA ,  INAZAWA KOUICHIRO ,  OKAMOTO SHIN

IPC: H01L21/3065 ,  H01L21/311

Abstract: An etching gas is supplied into a process chamber (16) and turned into plasma so as to etch a silicon nitride film (12) arranged on a field silicon oxide film (4) on a wafer (w). A mixture gas containing at least CH2F2 gas and O2 gas is used as the etching gas. Parameters for planar uniformity, by which the etching apparatus is set in light of a set value of the planar uniformity, include the process pressure and the mixture ratio (CH2F2/O2) of the mixture gas. As the set value of the planar uniformity is more strict, either one of the process pressure and the mixture ratio is set higher.

公开(公告)号：AU2003262408A1

公开(公告)日：2003-11-03

申请号：AU2003262408

申请日：2003-01-17

Applicant: TOKYO ELECTRON LTD

Inventor： HAGIWARA MASAAKI ,  NISHIMURA EIICHI ,  INAZAWA KOUICHIRO ,  BALASUBRAMANIAM VAIDYANATHAN

IPC: H01L21/3065 ,  B31D3/00 ,  G03F7/42 ,  H01L21/02 ,  H01L21/027 ,  H01L21/304 ,  H01L21/311

Abstract: A method is provided for plasma ashing to remove photoresist remnants and etch residues that are formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving an oxygen-containing gas, where low or zero bias is applied to the substrate in the first cleaning step to remove significant amount of photoresist remnants and etch residues from the substrate, in addition to etching and removing detrimental fluoro-carbon residues from the chamber surfaces. An increased bias is applied to the substrate in the second cleaning step to remove the remains of the photoresist and etch residues from the substrate. The two-step process reduces the memory effect commonly observed in conventional one-step ashing processes. A method of endpoint detection can be used to monitor the ashing process.

公开(公告)号：EP1041613A4

公开(公告)日：2006-02-15

申请号：EP98961548

申请日：1998-12-25

Applicant: TOKYO ELECTRON LTD

Inventor： YAMADA MASAHIRO ,  ITO YOUBUN ,  INAZAWA KOUICHIRO

IPC: C23F4/00 ,  H01L21/311 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/768

CPC classification number: H01L21/76802 ,  H01L21/31116 ,  H01L21/76804 ,  Y02C20/30 ,  Y02P70/605

Abstract: A processing gas constituted of C5F8, O2 and Ar achieving a flow rate ratio of 1 ≤ C5F8 flow rate/O2 flow rate ≤ 1.625 is supplied into a processing chamber 102 of an etching apparatus 100 and the atmosphere pressure is set within a range of 45mTorr SIMILAR 50mTorr. High-frequency power is applied to a lower electrode 110 sustained within a temperature range of 20 DEG C SIMILAR 40 DEG C on which a wafer W is mounted to raise the processing gas to plasma, and using the plasma, a contact hole 210 is formed at an SiO2 film 208 on an SiNx film 206 formed at the wafer W. The use of C5F8 and O2 makes it possible to form a contact hole 210 achieving near-perfect verticality at the SiO2 film 208 and also improves the selection ratio of the SiO2 film 208 relative to the SiNx film 206. C5F8, which becomes decomposed over a short period of time when released into the atmosphere, does not induce the greenhouse effect.

Abstract translation: 将由C5F8，O2和Ar构成的处理气体，将流量比为1≤C5F8流量/ O2流量≤1.625的流量供给到蚀刻装置100的处理室102中，将气氛压力设定在45mTorr 类似于50mTorr。 将高频电力施加到在安装有晶片W的20℃，类似于40℃的温度范围内保持的下电极110，以将处理气体升高到等离子体，并且使用等离子体，形成接触孔210 在形成在晶片W上的SiNx膜206上的SiO 2膜208上。使用C5F8和O2使得可以形成在SiO 2膜208处实现接近完全垂直度的接触孔210，并且还改善了SiO 2膜的选择比 膜208相对于SiNx膜206.当释放到大气中时，在短时间内分解的C5F8不诱导温室效应。

公开(公告)号：EP1120822A4

公开(公告)日：2004-11-10

申请号：EP99940607

申请日：1999-09-01

Applicant: TOKYO ELECTRON LTD

Inventor： AKAHORI TAKASHI ,  INAZAWA KOUICHIRO ,  SENOO KOUJI ,  HAGIWARA MASAAKI

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/311 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/768

CPC classification number: H01L21/76832 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/3127 ,  H01L21/31612 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76835 ,  H01L2221/1031 ,  H01L2221/1036

Abstract: A semiconductor device using, e.g., a fluorine containing carbon film, as an interlayer dielectric film is produced by a dual damascene method which is a simple technique. After an dielectric film, e.g., an SiO2 film 3, is deposited on a substrate 2, the SiO2 film 3 is etched to form a via hole 31 therein, and then, a top dielectric film, e.g., a CF film 4, is deposited on the top face of the SiO2 film 3. If the CF film is deposited by activating a thin-film deposition material having a bad embedded material, e.g., C6F6 gas, as a plasma, the CF film 4 can be deposited on the top face of the SiO2 film 3 while inhibiting the CF film from being embedded into the via hole 31. Subsequently, by etching the CF film 4 to form a groove 41 therein, it is possible to easily produce a dual damascene shape wherein the groove 41 is integrated with the via hole 31.

公开(公告)号：JP2011066441A

公开(公告)日：2011-03-31

申请号：JP2010261500

申请日：2010-11-24

Applicant: Tokyo Electron Ltd ,  東京エレクトロン株式会社

Inventor： BALASUBRAMANIAM VAIDYANATHAN ,  HAGIWARA MASAAKI ,  NISHIMURA EIICHI ,  INAZAWA KOUICHIRO

IPC: H01L21/3065 ,  B31D3/00 ,  G03F7/42 ,  H01L21/02 ,  H01L21/027 ,  H01L21/304 ,  H01L21/311

CPC classification number: H01L21/02063 ,  G03F7/427 ,  H01L21/31138

Abstract: PROBLEM TO BE SOLVED: To provide a plasma processing method for removing photoresist and etching residue, where erosion of the surrounding substrate layer is reduced as compared with that in one-step ashing.
SOLUTION: An ashing method uses a two-step plasma process involving a hydrogen-containing gas, where a low bias or zero bias is applied to a substrate in a first cleaning step to remove a significant amount of photoresist remnant and etching residue from the substrate, and removing a detrimental fluorocarbon residue is removed from a chamber surface by etching. An increased bias is applied to the substrate in a second cleaning step to remove the photoresist remnant and etching residue from the substrate. The two-step process reduces the memory effect commonly observed in each conventional one-step ashing process. A method of endpoint detection can be used to monitor the ashing process.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种等离子体处理方法，用于去除光刻胶和蚀刻残留物，与一步灰化相比，周围基底层的侵蚀减小。 解决方案：灰化方法使用涉及含氢气体的两步等离子体工艺，其中在第一清洁步骤中向衬底施加低偏压或零偏压以除去大量光致抗蚀剂残留物和蚀刻残留物 通过蚀刻从室内表面除去有害的碳氟化合物残渣。 在第二清洗步骤中，对衬底施加增加的偏压以除去光致抗蚀剂残余物并从衬底上蚀刻残留物。 两步法减少了常规一步灰化过程中常见的记忆效应。 端点检测方法可用于监测灰化过程。 版权所有（C）2011，JPO＆INPIT