-
公开(公告)号：JP2002059359A
公开(公告)日：2002-02-26
申请号：JP2000253476
申请日：2000-08-24
Applicant: TORAY INDUSTRIES
Inventor： SHIMAGAKI MASAAKI , MINAMIGUCHI NAOSHI
IPC: B24B37/20 , B24B37/22 , B24B37/24 , H01L21/304 , B24B37/00
Abstract: PROBLEM TO BE SOLVED: To reduce dust attachment to a surface of an article to be polished, to reduce scratches, to provide a flattening characteristic in common and to remove defects of fine irregularities of a semiconductor wafer before irregularity working itself expressed as waviness, nanotopology, etc., under a simple polishing method. SOLUTION: This polishing pad is made mainly of an organic high polymer matrix on which more than two sheet layers are accumulated.
-
公开(公告)号：JP2002009024A
公开(公告)日：2002-01-11
申请号：JP2000185763
申请日：2000-06-21
Applicant: TORAY INDUSTRIES
Inventor： OTA MASAMI , SHIMAGAKI MASAAKI , MINAMIGUCHI NAOSHI
IPC: B24B37/20 , B24B37/24 , C08J5/14 , C08L101/00 , H01L21/304 , B24B37/00
Abstract: PROBLEM TO BE SOLVED: To provide a polishing pad for mechanically flattening the surface of an insulating layer or metal wiring formed on a silicon substrate by which the polishing rate is high, the global level difference is small, dishing at the metal wiring is hard to occur, few scratches are caused and little dust is adhered. SOLUTION: The polishing pad has a construction in which polymeric fine grains exhibiting an official moisture regain of 5% or more are dispersed in a matrix resin.
-
公开(公告)号：JP2000232082A
公开(公告)日：2000-08-22
申请号：JP4176499
申请日：1999-02-19
Applicant: TORAY INDUSTRIES
Inventor： MINAMIGUCHI NAOSHI , JIYOU KUNITAKA , OKA TETSUO
IPC: B24B37/20 , B24B37/24 , C08J5/14 , C08L21/00 , C08L51/04 , C08L55/02 , C08L101/00 , H01L21/304 , B24B37/00
Abstract: PROBLEM TO BE SOLVED: To provide a polishing apparatus or pad for use in a mechanically flattening step of smoothing a surface of an insulating or metallic wiring layer formed on a semiconductor substrate by polishing, and also to obtain a technique for uniformly flattening the entire surface of the semiconductor substrate and polishing it with suppressed scratch generation and with superior quality reproducibility. SOLUTION: This polishing pad for polishing a semiconductor substrate includes a polishing layer of a resin composition having a phase separation structure. The polishing apparatus includes the polishing pad provided facing opposite a polishing head, a polishing platen for fixing the polishing pad and a driving device for rotating the polishing head and/or polishing platen. The method for polishing the semiconductor substrate includes the steps of fixing the substrate to the polishing head, and rotating the polishing head and/or polishing platen under a condition in which the pad fixed to the platen is pushed against the substrate.
-
公开(公告)号：JPH09290275A
公开(公告)日：1997-11-11
申请号：JP4574697
申请日：1997-02-28
Applicant: TORAY INDUSTRIES
Inventor： MINAMIGUCHI NAOSHI , TAKEUCHI HIROSHI , FUSAOKA YOSHINARI
Abstract: PROBLEM TO BE SOLVED: To effectively reduce boron dissolved in water in a desalination equipment or a water purifying equipment by providing a means for removing >=2- valent cations in a water to be treated, a means for controlling pH to a specific value and a reverse osmotic membrane for removing boron. SOLUTION: The water to be treated produced from a sea water desalination reverse osmotic membrane separating device is stored in a treating water tank 1 after the removal of turbid components or the sterilization by a pretreating means. The water to be treated is fed successively to the polyvalent cation removing RO membrane separating device 2 and a boron removing RO membrane separating device 6. In such a case, a permeated water 3 in the RO membrane separating device 2 is controlled to >=pH9 by a means 5 for controlling pH by a method such as by charging an aq. solution of lime or the like and supplied to the boron removing RO membrane separating device 6. In such a case, the permeated water 7 removed in boron and the concentrated water 8 enriched in boron are separated from each other and a drinking water is obtained by adding a pH adjuster or a disinfectant in the permeated water 7.
-
公开(公告)号：JPH08206460A
公开(公告)日：1996-08-13
申请号：JP31424595
申请日：1995-12-01
Applicant: TORAY INDUSTRIES
Inventor： MINAMIGUCHI NAOSHI , TAKEUCHI HIROSHI , FUSAOKA YOSHINARI , IKEDA TOSHIHIRO , KURIHARA MASARU
Abstract: PURPOSE: To obtain fresh water in a high yield with a low energy without generating scale in the removal of boron by arranging a unit using a reverse osmosis membrane having a specific salt removing rate and a unit using a low pressure reverse osmosis membrane having transmission flow velocity in a multistage fashion. CONSTITUTION: The reverse osmosis membrane module unit A4 is constituted using a membrane having capacity such that a salt removing rate at the time of measurement using a 3.5% saline soln. under a condition of 56kgf/cm , 25 deg.C and pH6.5 is 90% or more, and a reverse osmosis membrane module unit B7 is obtained using a membrane having capacity such that transmission flow velocity at the time of measurement using a saline solution of 1500ppm under a condition of 15kgf/cm , 25 deg.C and pH6.5 is 0.8m /m .day or more. Both units 4, 7 are arranged in a multistage fashion. High concn. supply water such as seawater is pretreated to be supplied to the first stage unit B7 of a loose RO membrane to be separated into polyvalent ions such as scale components, medium to high-molecular substances, monovalent ions and a low mol.wt. substance. Next, high recovery separation is performed in the unit A4.
-
Patent Agency Ranking
公开(公告)号：JPH02218421A
公开(公告)日：1990-08-31
申请号：JP4107889
申请日：1989-02-21
Applicant: TORAY INDUSTRIES
Inventor： MINAMIGUCHI NAOSHI , MURAKISHI HIDEO , NAKAGAWA YUKIO
Abstract: PURPOSE:To exhibit an excellent separation performance by using a net made of a mesh-type textile as a material for permeating liquid path of a liquid separation unit. CONSTITUTION:A liquid separation unit is fitted to a center tube 1 and has the first semi-permeable membrane 2 and a material 4b for permeating liquid path. Thickness (a) of a net is determined by a fineness (b) of monofilament and, therefore, it is possible to set up its thickness optionally by changing the thickness of monofilament. A minimum mesh size is restricted by a rigidity of fiber and the fineness (b) of the monofilament. As for a type of yarn, either multifilament or monofilament is usable. By using this construction, it is possible to improve a separation performance and durability of a spiral type liquid separation unit.
-
公开(公告)号：JP2002059357A
公开(公告)日：2002-02-26
申请号：JP2000252133
申请日：2000-08-23
Applicant: TORAY INDUSTRIES
Inventor： MINAMIGUCHI NAOSHI , SHIMAGAKI MASAAKI , OTA MASAMI
IPC: B24B37/20 , B24B37/22 , B24B37/26 , H01L21/304 , H01L21/306 , B24B37/00
Abstract: PROBLEM TO BE SOLVED: To provide a polishing pad, a polishing device and a polishing method capable of speedily eliminating a global step difference by selectively polishing a protruded part of an irregularity on a semiconductor substrate surface in flattening of the semiconductor substrate by a CMP, reducing recessing quantity of dishing and thinning even in polishing in metallic wiring and an STI and providing the high quality semiconductor substrate with few scratch flaws and residual dust. SOLUTION: The polishing pad to be used for chemical mechanical polishing to flatten the substrate constitutes its characteristic feature of containing a polishing layer a contact angle with water of which is less than 75 degrees and to satisfy conditions of (A) and/or (B) shown hereinunder. (A) A flexural elastic modulus is more than 2 GPa. (B) Surface hardness is more than 80 in durometer D hardness.
-
公开(公告)号：JP2002009025A
公开(公告)日：2002-01-11
申请号：JP2000185764
申请日：2000-06-21
Applicant: TORAY INDUSTRIES
Inventor： OTA MASAMI , SHIMAGAKI MASAAKI , MINAMIGUCHI NAOSHI
IPC: B24B37/20 , B24B37/24 , C08J5/14 , H01L21/304 , B24B37/00
Abstract: PROBLEM TO BE SOLVED: To provide a polishing pad for mechanically flattening the surface of an insulating layer or metal wiring formed on a silicon substrate by which the polishing rate is high, the global level difference is small, dishing at the metal wiring is hard to occur, few scratches are caused and little dust is adhered. SOLUTION: The polishing pad has a construction in which a fiber and/or an intermingle element of fibers exhibiting an official moisture regain of 5% or more are dispersed in a matrix resin.
-
公开(公告)号：JP2001179607A
公开(公告)日：2001-07-03
申请号：JP36401699
申请日：1999-12-22
Applicant: TORAY INDUSTRIES
Inventor： SHIMAGAKI MASAAKI , MINAMIGUCHI NAOSHI
IPC: B24B37/20 , B24B37/24 , H01L21/304 , B24B37/00
Abstract: PROBLEM TO BE SOLVED: To provide a polishing pad capable of retaining suitable polishing characteristic only in a simple bristle brushing operation. SOLUTION: The polishing pad comprises the variation of a value for an average roughness Ra of a center line of one silicon wafer with an oxide film being 0.2 μm or less after polishing with an uneven surface profile dressed before polishing, as a reference.
-
公开(公告)号：JPH119978A
公开(公告)日：1999-01-19
申请号：JP16438097
申请日：1997-06-20
Applicant: TORAY INDUSTRIES
Inventor： MINAMIGUCHI NAOSHI , ITO AKIHIKO , FUSAOKA YOSHINARI
Abstract: PROBLEM TO BE SOLVED: To manufacture a new composite translucent film of high solute removal performance and also high water permeation performance. SOLUTION: In a composite translucent film formed of a microporous substrate film coated with a microfilm, a microfilm layer is formed of a crosslinking polyamide polymer containing acyl residue composed of π-shortage aromatic rings bonded with three carbonyls or more. In that case, the π-shortage aromatic heterocyclic structure is the pyridine cyclic structure, and it is preferable that the crosslinking polyamide polymer contains units represented by a formula (In the formula,-X represents-H, -CH3 or-NH-).
-
-
-
-
-
-
-
-
-
Search Results
39
records
(took 0.024 seconds)
