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公开(公告)号：DE69416564T2
公开(公告)日：1999-07-15
申请号：DE69416564
申请日：1994-04-28
Applicant: TORAY INDUSTRIES
Inventor： OOSEDO HIROKI , KANETSUKI SHIGEYOSHI , TAMURA KAZUTAKA , ASANO MASAYA , KATAOKA MUTSUO DI
Abstract: The present invention relates to a developer for a positive electron beam resist composition containing a cresolnovolak resin, a lower molecular additive with a specific structure and a quinonediazide compound with a specific structure, the developer containing specific amounts of alkali metal ions, weak acid anions and a water soluble organic compound. Use of the developer with the positive electron beam resist composition, which results in excellent dry etching resistance and resolution, enables a fine pattern to be obtained at high sensitivity.
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公开(公告)号：DE69416564D1
公开(公告)日：1999-03-25
申请号：DE69416564
申请日：1994-04-28
Applicant: TORAY INDUSTRIES
Inventor： OOSEDO HIROKI , KANETSUKI SHIGEYOSHI , TAMURA KAZUTAKA , ASANO MASAYA , KATAOKA MUTSUO DI
Abstract: The present invention relates to a developer for a positive electron beam resist composition containing a cresolnovolak resin, a lower molecular additive with a specific structure and a quinonediazide compound with a specific structure, the developer containing specific amounts of alkali metal ions, weak acid anions and a water soluble organic compound. Use of the developer with the positive electron beam resist composition, which results in excellent dry etching resistance and resolution, enables a fine pattern to be obtained at high sensitivity.
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公开(公告)号：DE69430960T2
公开(公告)日：2003-02-20
申请号：DE69430960
申请日：1994-04-28
Applicant: TORAY INDUSTRIES
Inventor： OOSEDO HIROKI , KATAOKA MUTSUO , KANETSUKI SHIGEYOSHI , TAMURA KAZUTAKA , ASANO MASAYA
Abstract: The present invention relates to a developer for a positive electron beam resist composition containing a cresolnovolak resin, a lower molecular additive with a specific structure and a quinonediazide compound with a specific structure, the developer containing specific amounts of alkali metal ions, weak acid anions and a water soluble organic compound. Use of the developer with the positive electron beam resist composition, which results in excellent dry etching resistance and resolution, enables a fine pattern to be obtained at high sensitivity.
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公开(公告)号：DE69430960D1
公开(公告)日：2002-08-14
申请号：DE69430960
申请日：1994-04-28
Applicant: TORAY INDUSTRIES
Inventor： OOSEDO HIROKI , KATAOKA MUTSUO , KANETSUKI SHIGEYOSHI , TAMURA KAZUTAKA , ASANO MASAYA
Abstract: The present invention relates to a developer for a positive electron beam resist composition containing a cresolnovolak resin, a lower molecular additive with a specific structure and a quinonediazide compound with a specific structure, the developer containing specific amounts of alkali metal ions, weak acid anions and a water soluble organic compound. Use of the developer with the positive electron beam resist composition, which results in excellent dry etching resistance and resolution, enables a fine pattern to be obtained at high sensitivity.
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公开(公告)号：EP1031880A4
公开(公告)日：2001-10-17
申请号：EP99940702
申请日：1999-09-07
Applicant: TORAY INDUSTRIES
Inventor： TAMURA KAZUTAKA
CPC classification number: G03F7/039 , G03F7/0045 , Y10S430/111 , Y10S430/143 , Y10S430/167
Abstract: A positive radiation-sensitive composition comprising a polymer whose solubility in an aqueous alkali solution increases by the action of an acid and a compound which generates an acid upon irradiation with a radiation, characterized in that the polymer is more susceptible to radiation-induced backbone cleavage than poly(methyl methacrylate); or a positive radiation-sensitive composition comprising an alkali-soluble polymer, a compound which has the effect of reducing the alkali solubility of the polymer and in which the effect is lessened or eliminated by the action of an acid, and a compound which generates an acid upon irradiation with a radiation, characterized in that the polymer is more susceptible to radiation-induced backbone cleavage than poly(methyl methacrylate). The composition is a high-sensitivity composition having such high resolution that patterns with a line width smaller than a quarter micrometre can be formed therefrom.
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Patent Agency Ranking6.发明公开
公开(公告)号：EP1229390A4
公开(公告)日：2004-06-02
申请号：EP01901436
申请日：2001-01-19
Applicant: TORAY INDUSTRIES
Inventor： NIWA HIROYUKI , TAMURA KAZUTAKA , SENOO MASAHIDE
IPC: C08F20/26 , C08F220/04 , C08F220/14 , C08F220/26 , G03F7/039 , G03F7/075 , C08F12/24 , C08F20/12 , H01L21/027
CPC classification number: C08F220/26 , C08F20/26 , C08F220/04 , C08F220/14 , G03F7/0392 , G03F7/0758 , C08F2220/281 , C08F220/06
Abstract: A positive type radiation-sensitive composition comprising (A) a compound in which an alkali-soluble group comprising a carboxyl group or phenolic hydroxyl group has been protected by an acid-eliminable group (a) which is any of the following (a1) to (a3), and (B) an acid generator which generates an acid upon irradiation with a radiation; and a method of forming a resist pattern using the composition. (a1) The acid-eliminable group (a) is -CR3, provided that at least two of the R's are aromatic rings. (The alkali-soluble group is a carboxyl group.) (a2) The acid-eliminable group (a) is -CR3, provided that at least one of the R's is an aromatic ring having an electron-donating group. (a3) The acid-eliminable group (a) has an alkali-soluble group (a') or has an alkali-soluble group (a') protected by an acid-eliminable group.
Abstract translation: 本发明涉及一种正性辐射敏感性组合物，其特征在于，其含有满足条件a1）〜a3）中任一项的化合物，以及b）通过辐射照射产生酸的酸发生剂; 并且还涉及制备使用其的抗蚀剂图案的方法。 a1）其中羧基被通式（1）表示的酸不稳定基团保护的化合物
（R 1和R 2）是芳环，R 3表示烷基， 取代的烷基，环烷基或芳香环，R 1至R 3可以相同或不同。）a2）其中碱溶性基团被一般表示的酸不稳定基团保护的化合物 式（2） （R 4〜R 6）各自为烷基，取代的烷基，环烷基或芳香环，R 4〜R 6中的至少一个为 是具有给电子基团的芳香环，R 4〜R 6可以相同或不同。）a3）碱溶性基团被酸不稳定基团a保护的化合物， 酸不稳定基团a具有碱溶性基团或酸不稳定基团a具有被酸不稳定基团b保护的碱溶性基团。 利用该结构，可以通过本发明获得具有能够进行二分之一微米图案处理的分辨率的高灵敏度的正性辐射敏感性组合物。 -
7.发明公开
公开(公告)号：EP0649061A4
公开(公告)日：1995-08-09
申请号：EP94914572
申请日：1994-04-28
Applicant: TORAY INDUSTRIES
Inventor： OOSEDO HIROKI , KANETSUKI SHIGEYOSHI , TAMURA KAZUTAKA , ASANO MASAYA , KATAOKA MUTSUO DI
CPC classification number: G03F7/322 , G03F7/022 , G03F7/0226 , G03F7/32 , Y10S430/143
Abstract: A positive electron-beam resist composition comprising a cresol novolak resin, a low-molecular additive with a specified structure, and a quinone diazide compound with a specified structure; and a developer for positive electron-beam resist containing an alkali metal ion, a weak acid radical ion, and a water-soluble organic compound each in a specified amount. The invention resist composition is excellent in dry etching resistance and resolution, and can provide fine patterns at a high sensitivity especially when the invention developer is used.
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公开(公告)号：JP2002173467A
公开(公告)日：2002-06-21
申请号：JP2000371231
申请日：2000-12-06
Applicant: TORAY INDUSTRIES
Inventor： NIO HIROYUKI , TAMURA KAZUTAKA
IPC: G03F7/039 , C07C67/14 , C07C69/54 , C07C69/653 , C07C71/00 , C08F20/16 , C08K5/00 , C08L33/00 , H01L21/027
Abstract: PROBLEM TO BE SOLVED: To provide a method for easily producing in high yield an acrylic monomer comprising a tertiary ester, and to provide a polymer for a positive- type radiation-sensitive composition by the use of the acrylic monomer, and to provide the positive-type radiation-sensitive composition. SOLUTION: This method for producing an acrylic monomer comprising a tertiary ester comprises reaction between a tertiary alcohol and an α- substituted or nonsubstituted acrylic acid chloride prepared by the reaction between an α-substituted or nonsubstituted acrylic acid and oxalyl chloride, or comprises reaction between a metal alkoxide of the general formula 2 or 3 (R4 to R9 are each independently a 1-20C organic group) and an α-substituted or nonsubstituted acrylic acid chloride prepared by reaction between an α- substituted or nonsubstituted acrylic acid and oxalyl chloride.
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公开(公告)号：JP2002156761A
公开(公告)日：2002-05-31
申请号：JP2000352489
申请日：2000-11-20
Applicant: TORAY INDUSTRIES
Inventor： NIO HIROYUKI , TAMURA KAZUTAKA , SENOO MASAHIDE
IPC: G03F7/039 , C08L25/18 , C08L33/14 , C08L101/06 , H01L21/027
Abstract: PROBLEM TO BE SOLVED: To obtain a positive radiation-sensitive composition having high sensitivity and high resolution for making sub-quarter micron pattern processing possible. SOLUTION: The positive radiation sensitive composition contains (a) an alkali-soluble resin with the alkali-soluble groups protected with acid releasing groups and (b) an acid producing agent, which produces acids by irradiation of radiation. The acid leaving groups of (a) have at least one phenolic hydroxyl group or have the phenolic hydroxyl group protected by an acid releasing group.
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公开(公告)号：JP2001194790A
公开(公告)日：2001-07-19
申请号：JP2000004306
申请日：2000-01-13
Applicant: TORAY INDUSTRIES
Inventor： TAMURA KAZUTAKA , NIO HIROYUKI , OBAYASHI GENTARO
IPC: H01L21/027 , G03F7/039
Abstract: PROBLEM TO BE SOLVED: To obtain a high sensitivity positive type radiation sensitive composition having such resolution as to attain sub-quarter-micron patterning. SOLUTION: The positive type radiation sensitive composition contains a polymer containing a structural unit of formula 1 (where X is fluorine-containing alkyl; and A is a monovalent organic group having tertiary carbon combined to oxygen and containing an aromatic ring) and an acid generating agent which generates an acid when irradiated.
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