1.
    发明专利
    未知

    公开(公告)号:DE68928789T2

    公开(公告)日:1998-12-24

    申请号:DE68928789

    申请日:1989-05-17

    Abstract: The present invention is concerned with a printing plate of which image formation is done by photoirradiation, having a front side covered with a peelable or removable protective layer which contains a photofading material. The printing plate is safe against fogging to light and can be used under ordinary illumination.

    3.
    发明专利
    未知

    公开(公告)号:DE69827429D1

    公开(公告)日:2004-12-16

    申请号:DE69827429

    申请日:1998-05-15

    Abstract: An actinic radiation sensitive polymer composition containing (a) a polyimide precursor obtainable by the interaction of an amine compound having a photocrosslinking group with carboxyl groups of a poly(amic acid) chain, and (b) a photoinitiator and/or photosensitizer, in which the degree of imidization Ia is 0.03 ≤ Ia ≤ 0.6, has the characteristic features of both good stability of viscosity with lapse of time and good photosensitive performance.

    5.
    发明专利
    未知

    公开(公告)号:DE69827429T2

    公开(公告)日:2005-11-10

    申请号:DE69827429

    申请日:1998-05-15

    Abstract: An actinic radiation sensitive polymer composition containing (a) a polyimide precursor obtainable by the interaction of an amine compound having a photocrosslinking group with carboxyl groups of a poly(amic acid) chain, and (b) a photoinitiator and/or photosensitizer, in which the degree of imidization Ia is 0.03 ≤ Ia ≤ 0.6, has the characteristic features of both good stability of viscosity with lapse of time and good photosensitive performance.

    6.
    发明专利
    未知

    公开(公告)号:DE69430960T2

    公开(公告)日:2003-02-20

    申请号:DE69430960

    申请日:1994-04-28

    Abstract: The present invention relates to a developer for a positive electron beam resist composition containing a cresolnovolak resin, a lower molecular additive with a specific structure and a quinonediazide compound with a specific structure, the developer containing specific amounts of alkali metal ions, weak acid anions and a water soluble organic compound. Use of the developer with the positive electron beam resist composition, which results in excellent dry etching resistance and resolution, enables a fine pattern to be obtained at high sensitivity.

    7.
    发明专利
    未知

    公开(公告)号:DE69430960D1

    公开(公告)日:2002-08-14

    申请号:DE69430960

    申请日:1994-04-28

    Abstract: The present invention relates to a developer for a positive electron beam resist composition containing a cresolnovolak resin, a lower molecular additive with a specific structure and a quinonediazide compound with a specific structure, the developer containing specific amounts of alkali metal ions, weak acid anions and a water soluble organic compound. Use of the developer with the positive electron beam resist composition, which results in excellent dry etching resistance and resolution, enables a fine pattern to be obtained at high sensitivity.

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