公开(公告)号：JP2013072896A

公开(公告)日：2013-04-22

申请号：JP2011209850

申请日：2011-09-26

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： HIENO ATSUSHI ,  HATTORI SHIGEKI ,  NAKAMURA HIROKO ,  MIKOSHIBA SATOSHI ,  ASAKAWA KOUJI ,  SUGANO MASAHIRO ,  KIYONO YURIKO ,  AZUMA TSUKASA

IPC: G03F7/11 ,  G03F7/26 ,  G03F7/36 ,  H01L21/027

CPC classification number: G03F7/40 ,  B32B7/04 ,  B32B2307/40 ,  B82Y30/00 ,  G03F7/0002 ,  G03F7/004 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/11 ,  G03F7/165 ,  G03F7/20

Abstract: PROBLEM TO BE SOLVED: To provide a pattern formation method for easily controlling orientation of a block copolymer and forming a fine pattern in a shorter time by using microphase separation of the block copolymer.SOLUTION: A pattern formation method includes processes of: forming a heat crosslinkable molecular layer 12 by applying heat crosslinkable molecules onto a substrate 11; forming a photosensitive polymer layer 17 by applying photosensitive polymers onto the heat crosslinkable molecular layer 12; adhering the heat crosslinkable molecular layer 12 and the photosensitive polymer layer 17 by a crosslinking reaction caused by heating; forming a photosensitive polymer pattern having exposed parts and unexposed parts by selectively exposing the photosensitive polymer layer 17; and forming a block copolymer layer 14 including first and second block chains on the photosensitive polymer layer 17, performing micro-phase separation of the block copolymer layer, and forming a pattern of the first and second block chains on the basis of a surface energy of the polymer layer 13.

Abstract translation: 解决问题的方法：通过使用嵌段共聚物的微相分离，提供容易控制嵌段共聚物取向并在较短时间内形成精细图案的图案形成方法。 解决方案：图案形成方法包括以下工艺：通过将热交联分子施加到基底11上而形成热交联分子层12; 通过将光敏聚合物涂覆在热交联性分子层12上形成光敏聚合物层17; 通过加热引起的交联反应使热交联性分子层12和感光性聚合物层17粘接; 通过选择性地曝光光敏聚合物层17，形成具有曝光部分和未曝光部分的光敏聚合物图案; 并在感光性聚合物层17上形成包含第一和第二嵌段链的嵌段共聚物层14，进行嵌段共聚物层的微相分离，基于第一和第二嵌段链的表面能形成第一和第二嵌段链的图案 聚合物层13.版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012216755A

公开(公告)日：2012-11-08

申请号：JP2011218681

申请日：2011-09-30

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： FUJIMOTO AKIRA ,  NAKANISHI TSUTOMU ,  NAKAMURA KENJI ,  MASUNAGA KUMI ,  ASAKAWA KOUJI

IPC: H01L31/04

CPC classification number: H01L31/022425 ,  H01L31/02168 ,  H01L31/0288 ,  Y02E10/50

Abstract: PROBLEM TO BE SOLVED: To provide a photoelectric conversion element that can absorb light in the long wavelength region in which a conventional photoelectric conversion element cannot absorb.SOLUTION: A photoelectric conversion element includes a photoelectric conversion layer configured by stacking a first metal layer, a semiconductor layer, and a second metal layer. At least one of the first metal layer and the second metal layer is a metal thin film having a plurality of through holes or a metal thin film having a plurality of metal dots spaced apart from one another on the semiconductor layer. Besides, a layer containing an impurity different from the impurities forming a p-layer and an n-layer exists in the photoelectric conversion layer at a location within 5 nm from the metal thin film.

Abstract translation: 要解决的问题：提供能够吸收常规光电转换元件不能吸收的长波长区域中的光的光电转换元件。 解决方案：光电转换元件包括通过堆叠第一金属层，半导体层和第二金属层构成的光电转换层。 第一金属层和第二金属层中的至少一个是具有多个通孔的金属薄膜或在半导体层上具有彼此间隔开的多个金属点的金属薄膜。 此外，在距离金属薄膜5nm以内的位置处，在光电转换层中存在含有与形成p层和n层的杂质不同的杂质的层。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012059791A

公开(公告)日：2012-03-22

申请号：JP2010199345

申请日：2010-09-06

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： ASAKAWA KOUJI ,  FUJIMOTO AKIRA ,  KITAGAWA RYOTA ,  KAMAKURA TAKANOBU ,  NUNOTANI NOBUHITO ,  TSUTSUMI EIJI ,  OGAWA MASAAKI

IPC: H01L33/38 ,  H01L29/41

CPC classification number: H01L33/38 ,  H01L33/405 ,  H01L2933/0016

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having high luminance and a manufacturing method of the same.SOLUTION: The semiconductor light-emitting element according to an embodiment comprises a structure, a first electrode layer and a second electrode layer. The structure includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a luminescent layer provided between the first semiconductor layer and the second semiconductor layer. The first electrode layer includes a metal portion, a plurality of first openings and second openings. The first electrode layer is provided on the second semiconductor layer on the side opposite to the first semiconductor layer. The metal portion has a thickness ranging from 10 nanometers to 200 nanometers. The plurality of first openings have circle equivalent diameters ranging from 10 nanometers to 1 micrometer. The second openings have circle equivalent diameters ranging from more than 1 micrometer to 30 micrometers. The first electrode layer is in electrical conduction with the second semiconductor layer and the second electrode layer is in electrical conduction with the first semiconductor layer.

Abstract translation: 要解决的问题：提供一种具有高亮度的半导体发光元件及其制造方法。 解决方案：根据实施例的半导体发光元件包括结构，第一电极层和第二电极层。 该结构包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。 第一电极层包括金属部分，多个第一开口和第二开口。 第一电极层设置在与第一半导体层相反的一侧的第二半导体层上。 金属部分的厚度范围为10纳米至200纳米。 多个第一开口具有范围从10纳米到1微米的圆当量直径。 第二个开口具有大于1微米至30微米的圆当量直径。 第一电极层与第二半导体层导通，第二电极层与第一半导体层导通。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2012033534A

公开(公告)日：2012-02-16

申请号：JP2010169279

申请日：2010-07-28

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： HATTORI SHIGEKI ,  ASAKAWA KOUJI ,  NAKAMURA HIROKO ,  KITAGAWA RYOTA ,  KIYONO YURIKO ,  SUGANO MASAHIRO ,  HIGA MOMOKA

IPC: H01L21/027 ,  B82B3/00 ,  G03F7/26 ,  G03F7/40 ,  G03F7/42 ,  H01L21/312

CPC classification number: H01L21/3081 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/0337

Abstract: PROBLEM TO BE SOLVED: To provide a pattern formation method capable of forming a pattern having a high orientation and a phase-separated structure on a polymer alloy in a short time.SOLUTION: The pattern formation method includes the steps of: laminating a self-assembled monolayer and a polymer film on a substrate; chemically bonding the polymer film to the self-assembled monolayer with an irradiation of an energy ray, thereby forming a polymer surface layer on the self-assembled monolayer; and forming a polymer alloy having a pattern of a phase-separated structure on the polymer surface layer.

Abstract translation: 要解决的问题：提供能够在短时间内在聚合物合金上形成具有高取向和相分离结构的图案的图案形成方法。 解决方案：图案形成方法包括以下步骤：在基底上层叠自组装单层和聚合物膜; 通过照射能量射线将聚合物膜化学键合到自组装单层，从而在自组装单层上形成聚合物表面层; 并在聚合物表面层上形成具有相分离结构图案的聚合物合金。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2011187787A

公开(公告)日：2011-09-22

申请号：JP2010052809

申请日：2010-03-10

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： FUJIMOTO AKIRA ,  KITAGAWA RYOTA ,  TSUTSUMI EISHI ,  ASAKAWA KOUJI

IPC: H01L33/38

CPC classification number: H01L33/58 ,  H01L33/38 ,  H01L33/387 ,  H01L33/42 ,  H01L33/44

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element that has improved luminance characteristics, a lighting device using the same, and a method of manufacturing the semiconductor light emitting element. SOLUTION: The semiconductor light emitting element includes a compound semiconductor layer, a metal electrode layer formed thereupon and having a plurality of openings, and a specified light extraction layer formed further thereupon. The metal electrode layer has the openings of specified size. Further, the light extraction layer is 20 to 70 nm thick to cover the metal electrode layer, or has an uneven structure formed on a surface, a height from a surface of the metal electrode layer to a top of a projection portion being 200 to 700 nm. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种具有改善的亮度特性的半导体发光元件，使用该半导体发光元件的照明装置以及制造该半导体发光元件的方法。 解决方案：半导体发光元件包括化合物半导体层，在其上形成并具有多个开口的金属电极层，以及进一步形成的特定光提取层。 金属电极层具有规定尺寸的开口。 此外，光提取层的厚度为20〜70nm以覆盖金属电极层，或者具有形成在表面上的不均匀结构，从金属电极层的表面到突出部的顶部的高度为200〜700 纳米。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010219408A

公开(公告)日：2010-09-30

申请号：JP2009066169

申请日：2009-03-18

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： TSUTSUMI EISHI ,  MASUNAGA KUMI ,  KITAGAWA RYOTA ,  NAKANISHI TSUTOMU ,  FUJIMOTO AKIRA ,  NISHIZAWA HIDEYUKI ,  ASAKAWA KOUJI

IPC: H01L31/04

CPC classification number: H01L31/022433 ,  H01L31/03921 ,  H01L31/075 ,  H01L31/1884 ,  Y02E10/548

Abstract: PROBLEM TO BE SOLVED: To provide a light transmissive electrode achieving both of high generating efficiency and high transmittance, and a method of manufacturing the light transmissive electrode.
SOLUTION: A solar cell is equipped with: a photoelectric conversion layer; a light incidence surface side electrode layer; and a counter electrode layer. The light incidence surface side electrode layer is provided with a plurality of openings penetrating the light incidence surface side electrode layer, and a film thickness thereof is in a range of 10 nm or more and 200 nm or less, and an area per one opening of the openings is in a range of 80 nm
2 or more and 0.8 μm
2 or less, and numerical apertures of the openings are in a range of 10% or more and 66% or less, and the whole transmittance is 5% or more at 700 nm. The light incidence surface side electrode layer of this solar cell can be formed by etching using a single particle layer of fine particles and dot patterns of a self-organization of a block copolymer as a mask, and by utilizing a stamper.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供实现高发射效率和高透射率两者的透光电极以及制造透光电极的方法。

解决方案：太阳能电池配备有：光电转换层; 光入射面侧电极层; 和对电极层。 光入射面侧电极层设置有贯穿入射面侧电极层的多个开口，其膜厚度在10nm以上且200nm以下的范围内，每1个开口的面积 开口在80nm 2 以上且0.8μm 2 以下的范围内，开口的数值孔径在10％以上且66以上的范围内 ％以下，700nm处的全透光率为5％以上。 该太阳能电池的光入射面侧电极层可以通过使用单粒子层的细颗粒和嵌段共聚物的自组织的点图案作为掩模，并利用压模来形成。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010219388A

公开(公告)日：2010-09-30

申请号：JP2009065928

申请日：2009-03-18

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： NAKANISHI TSUTOMU ,  TSUTSUMI EISHI ,  FUJIMOTO AKIRA ,  MASUNAGA KUMI ,  KITAGAWA RYOTA ,  ASAKAWA KOUJI ,  NISHIZAWA HIDEYUKI

IPC: H01L31/04

CPC classification number: H01L31/1884 ,  H01L31/022433 ,  H01L31/075 ,  Y02E10/548

Abstract: PROBLEM TO BE SOLVED: To provide a thin film solar cell that can obtain superior conversion efficiency even when a photoelectric conversion layer is made thin in film thickness, and to provide a method of manufacturing the thin film solar cell. SOLUTION: The thin film solar cell 1 includes a substrate 2, the photoelectric conversion layer 4 of ≤1 μm in thickness formed on the substrate 2 and including at least a p-type semiconductor layer 4a, an n-type semiconductor layer 4c, and an i-type semiconductor layer 4b disposed between the p-type semiconductor layer 4a and n-type semiconductor layer 4c, a light incident surface-side electrode layer 5 formed on a light incident surface 4d of the photoelectric conversion layer 4, and a counter electrode layer 3 formed on the surface on the opposite side from the light incident surface 4d, wherein the light incident surface-side electrode layer 5 has a plurality of openings 5a penetrating the light incident surface-side electrode layer 5 and is 10 nm to 200 nm thick, the area of each opening 5a being 80 nm 2 to 0.8 μm 2 , and the numerical aperture as the rate of the total area of the openings 5a to the total area of the light incident surface-side electrode layer 5 being 10 to 66%. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供即使当光电转换层的膜厚变薄时也能获得优异的转换效率的薄膜太阳能电池，并且提供制造薄膜太阳能电池的方法。 解决方案：薄膜太阳能电池1包括基板2，厚度≤1μm的光电转换层4形成在基板2上，并且至少包括p型半导体层4a，n型半导体层 4c和设置在p型半导体层4a和n型半导体层4c之间的i型半导体层4b，形成在光电转换层4的光入射表面4d上的光入射表面侧电极层5， 以及形成在与光入射面4d相反一侧的表面上的对电极层3，其中，光入射表面侧电极层5具有穿过光入射表面侧电极层5的多个开口5a，并且为10 nm至200nm厚，每个开口5a的面积为80nm 2 至0.8μm 2 ，并且作为开口5a的总面积率的数值孔径 相对于光入射表面侧电极层的总面积 5是10到66％。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2009230960A

公开(公告)日：2009-10-08

申请号：JP2008073144

申请日：2008-03-21

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： NAKANISHI TSUTOMU ,  FUJIMOTO AKIRA ,  KITAGAWA RYOTA ,  TSUTSUMI EISHI ,  ASAKAWA KOUJI

IPC: H05B33/26 ,  H01L51/50 ,  H05B33/10

CPC classification number: H01L51/5203 ,  H01L51/5234 ,  H01L2251/5315

Abstract: PROBLEM TO BE SOLVED: To provide an organic electroluminescent (EL) display or an organic EL illumination device of high efficiency. SOLUTION: This is the organic electroluminescent display equipped with a substrate, a circuit part for pixel driving, and a pixel part aligned in a matrix shape on the substrate. The pixel part is equipped with a light-emitting part including at least one layer or more of organic layers pinched by a first electrode installed at a position near the substrate and a second electrode installed at a position far from the substrate. The second electrode is equipped with a metal electrode layer, and has a plurality of opening parts through which the metal electrode layer penetrates. The metal electrode layer is seamlessly continued between arbitrary two points of a metal site of the metal electrode layer, the diameter of the opening parts is within a range of 10 nm or more and 780 nm or less, the film thickness of the metal electrode layer is within a range of 10 nm or more and 200 nm or less, and in the case distribution of an alignment period of the opening parts is expressed by a radial distribution curve, its half value width is within a range of 5 to 300 nm. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供高效率的有机电致发光（EL）显示器或有机EL照明装置。 解决方案：这是配备有基板，用于像素驱动的电路部分和在基板上以矩阵形状排列的像素部分的有机电致发光显示器。 像素部件配备有发光部，该发光部包括由安装在基板附近的位置的第一电极夹持的有机层的至少一层以上，以及安装在远离基板的位置的第二电极。 第二电极配备有金属电极层，并且具有金属电极层穿过的多个开口部。 金属电极层在金属电极层的金属部位的任意两点之间无缝连续，开口部的直径在10nm以上且780nm以下的范围内，金属电极层的膜厚 在10nm以上且200nm以下的范围内，并且在开口部的取向周期的分布由径向分布曲线表示的情况下，其半值宽度在5〜300nm的范围内。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2009199990A

公开(公告)日：2009-09-03

申请号：JP2008042894

申请日：2008-02-25

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： TSUTSUMI EISHI ,  NAKANISHI TSUTOMU ,  FUJIMOTO AKIRA ,  ASAKAWA KOUJI

IPC: H01B5/14 ,  H01B13/00 ,  H01J9/02 ,  H01J11/02 ,  H01J11/22 ,  H01J11/34

CPC classification number: H01B13/0036 ,  H01J1/02 ,  H01J9/02 ,  H01J17/04 ,  H01J63/02 ,  H01J2217/49207

Abstract: PROBLEM TO BE SOLVED: To provide a light transmitting metal electrode having light transmissivity while using highly conductive metal by giving a very fine structure to a metal layer. SOLUTION: The light transmitting metal electrode includes a substrate, and a metal electrode layer having a plurality of opening portions. Selective two points of metal sites in the metal electrode layer continuously run on with each other. In the metal electrode layer, the opening portions are cyclically arrayed to form a plurality of micro domains, and the plurality of micro domains are mutually independent in in-plane arraying directions. The film thickness of the metal electrode layer is within 10-200 nm. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：通过给金属层提供非常精细的结构，提供具有透光性的透光金属电极，同时使用高导电性金属。 解决方案：透光金属电极包括基板和具有多个开口部分的金属电极层。 金属电极层中选择性的两点金属部位彼此连续运行。 在金属电极层中，开口部分被循环排列以形成多个微区域，并且多个微区域在面内排列方向上相互独立。 金属电极层的膜厚在10-200nm以内。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008085372A

公开(公告)日：2008-04-10

申请号：JP2007325301

申请日：2007-12-17

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： ASAKAWA KOUJI ,  FUJIMOTO AKIRA ,  SUGIYAMA HITOSHI ,  OHASHI KENICHI ,  TONOTANI JUNICHI ,  SUZUKI HIROYUKI

IPC: H01L33/22 ,  H01L33/30

Abstract: PROBLEM TO BE SOLVED: To improve emission efficiency by forming concave-convex structure sized in nanometer on a surface of light-emitting element or the like. SOLUTION: A concave-convex profile of light-emitting element surface is formed so that refractive index may smoothly vary from bulk as follows: namely, (1) an average diameter of the concave-convex profile is smaller than optical wave length; (2) a pitch of the concave-convex profile is equipped with irregularity; and (3) a height and location of bottom of the concave-convex profile are the optical wave length or less, and are made to have a margin from the average value for holding a smooth inclination of the refractive index. Furthermore, these element surfaces can be obtained by: containing block copolymer or graft copolymer; forming thin film on a surface of the light-emitting element using resin composition forming micro phase separation structure in such a manner of self-organization; selectively removing at least one side of the thin film micro phase separation structure formed on the surface; and etching the light-emitting element surface using residual phase as an etching mask. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：通过在发光元件等的表面上形成尺寸为纳米的凹凸结构来提高发光效率。 解决方案：形成发光元件表面的凹凸轮廓，使得折射率可以从体积平滑地变化如下：即，（1）凹凸轮廓的平均直径小于光波长 ; （2）凹凸轮廓的间距具有不规则性; 和（3）凹凸轮廓的底部的高度和位置是光波长或更小，并且使得具有从平均值的余量以保持折射率的平滑倾斜。 此外，这些元素表面可以通过以下方式获得：含有嵌段共聚物或接枝共聚物; 使用以自组织的方式形成微相分离结构的树脂组合物在发光元件的表面上形成薄膜; 选择性地除去形成在表面上的薄膜微相分离结构的至少一面; 并使用残留相蚀刻发光元件表面作为蚀刻掩模。 版权所有（C）2008，JPO＆INPIT