公开(公告)号：JPH07202119A

公开(公告)日：1995-08-04

申请号：JP33545693

申请日：1993-12-28

Applicant: TOSHIBA CORP

Inventor： SASAKI TOMIYA ,  KUNO KATSUMI ,  IWASAKI HIDEO ,  ISHIZUKA MASARU

IPC: H01L25/18 ,  H01L25/04

Abstract: PURPOSE:To provide a semiconductor device connecting device with which mounting density can be enhanced, and also an electronic apparatus and the like can be miniaturized, enhanced in efficiency and also can be increased in operating speed. CONSTITUTION:The input-output terminal 2 of an IC chip 21, to be electrically connected to the corresponding external terminal, is provided on the side face 24 of the IC chip 21 or on the opposed surface 23 of the circuit constituting surface 22, and they are electrically connected by bringing them into contact with the external terminal. As a result, a wiring and the like is unnecessary when the IC chip is mounted on a substrate, the area of substrate required for mounting can be made small, and the outer terminal, corresponding to an input-output terminal 25, is electrically connected directly. As a result, the area of substrate required for mounting can be made small, the mounting density of the IC chip 21 can be increased, and an electronic apparatus, on which the IC chip 21 is mounted, and the like can be miniaturized, its function can be enhanced and it can be operated at high speed.

公开(公告)号：JPH06326226A

公开(公告)日：1994-11-25

申请号：JP32732493

申请日：1993-12-24

Applicant: TOSHIBA CORP

Inventor： KAWANO KOICHIRO ,  MIZUKAMI HIROSHI ,  IWASAKI HIDEO ,  KUNO KATSUMI ,  ISHIZUKA MASARU

IPC: H01L23/473

Abstract: PURPOSE:To protect a semiconductor element and the like against fracture by suppressing the pressure drop at the time of feeding refrigerant. CONSTITUTION:A plurality of grooves 2 are made in the main surface of a substrate 1 thus constituting a plurality of fins 7. The top face of the fin 7 is set lower than the peripheral part of the substrate 1, for example, and a gap is provided between the main face of the substrate 1 and the opposing face of a cover plate 3 having through holes 4, 5 applied entirely thereto thus enlarging the channel area when the region, formed between the substrate 1 and the cover plate 3, is utilized as a channel for refrigerant. This constitution realizes a cooling unit in which the pressure drop can be suppressed at the time of feeding refrigerant.

公开(公告)号：JPH01315146A

公开(公告)日：1989-12-20

申请号：JP6585989

申请日：1989-03-20

Applicant: TOSHIBA CORP

Inventor： ISHIZUKA MASARU ,  YOKONO YASUYUKI ,  OHASHI HIROMICHI ,  KAMEI YOSHIO ,  MATSUURA ASAKO

IPC: H01L29/74 ,  H01L21/52

Abstract: PURPOSE:To realize a large capacity and high performance by a method wherein a heat-conducting means used to relax a thermal stress generated in a chip and to conduct heat to both electrodes from the surface of the chip is installed around the chip constituting a semiconductor switching element. CONSTITUTION:An aluminum nitride sheet (an AlN sheet) 13 is constituted in such a way that a first AlN sheet 16 is piled up on a second AlN sheet 7. When these sheets are piled up, a space 18 is formed between an anode electrode 11 and a cathode electrode 12; each chip 14 is mounted in this cubic space in a state that a molybdenum sheet 21 is laid between the electrodes. The molybdenum sheet 21 relaxes a thermal stress, in a thickness direction, generated in the chip 14 due to a difference in a coefficient of thermal expansion between the anode electrode 11 and the cathode electrode 12 and the chip 14; the AlN sheet 13 resuces a thermal resistance. By this setup, since it is possible to adopt a system where the required number of chips is arranged in parallel, a large capacity and high performance can be realized.

公开(公告)号：JPS6489351A

公开(公告)日：1989-04-03

申请号：JP24548287

申请日：1987-09-29

Applicant: TOSHIBA CORP

Inventor： ISHIZUKA MASARU

IPC: H01L23/34 ,  H01L23/36 ,  H01L23/373

Abstract: PURPOSE:To preferably cool generated heat at the normal time even if a thermal load is temporarily increased by sealing wax in a sealed space formed between a cap and a substrate, and further connecting fins between the cap and the substrate. CONSTITUTION:The face of a substrate 2, disposed at opposite side to the face for placing a semiconductor IC chip 1 is thermally connected to a cap 3 with fins 11. With such a configuration, when the chip 1 generates heat, the heat is transferred to the substrate 2. The heat transferred to the substrate 2 is transmitted at one side to the mixture 4 of wax and powder metal, and at the other to the cap 3 through the fins 11. In this case, when the quantity of the generated heat of the chip 1 is abruptly increased, the wax is melted by the heat at that time, the heat is absorbed by the phase change, thereby maintaining the temperature constant. On the other hand, if the generated heat is of the degree not melting the wax, it is transferred to the cap 3 by thermal conduction of the fins 11 and the metal powder, and dissipated through the cap 3.

公开(公告)号：JPS6326903A

公开(公告)日：1988-02-04

申请号：JP16981686

申请日：1986-07-21

Applicant: TOSHIBA CORP

Inventor： SASAKI TOMIYA ,  ISHIZUKA MASARU

IPC: F21S2/00 ,  F21V23/00 ,  F21V23/02 ,  H01J61/52

公开(公告)号：JPS61265393A

公开(公告)日：1986-11-25

申请号：JP10609385

申请日：1985-05-20

Applicant: TOSHIBA CORP

Inventor： ISHIZUKA MASARU ,  MIYAZAKI YOSHIRO

IPC: F04F1/04

Abstract: PURPOSE:To smoothly discharge the fluid in liquid phase which is positioned on a suction and discharge port side by a vapor pressure by installing a buffer between a heater in an accumulator and the suction and discharge port and regulating the straight advance of the vapor phase which is generated in the accumulator and directed towards the suction and discharge port. CONSTITUTION:When an accumulator 5A (5B) is heated by turning-ON a heater 13, the liquid in the accumulator is evaporated, and the vapor pressure increases, and the circulation fluid inside flows out from a suction and discharge port 11, and recirculates into an evaporator (not shown in the figure) through a suction and discharge chamber 23, endothermic-side check valve 9, and a conduit 27. As for, at this time, the vapor phase generated in the accumulators 5A and 5B, straight advance to the suction and discharge port 11 is regulated by a detour circuit which is shown by the arrows (a) and (b) and is constituted of the plate members 15A and 15B of a buffer 15 installed between the heater 13 and the suction and discharge port 11, and the vapor phase exerts the pressure for discharge onto the introduced fluid without flowing to the suction and discharge port 11. Therefore, the stable pumping-up action can be obtained even in the gravitation-free field such as in universe space.

公开(公告)号：JPS6129200A

公开(公告)日：1986-02-10

申请号：JP14860484

申请日：1984-07-19

Applicant: Toshiba Corp

Inventor： ISHIZUKA MASARU ,  SASAKI TOMIYA

IPC: H05K7/20 ,  F28D15/02 ,  H01L23/427 ,  H01L23/44

公开(公告)号：JPS59180283A

公开(公告)日：1984-10-13

申请号：JP5144983

申请日：1983-03-29

Applicant: Toshiba Corp

Inventor： ISHIZUKA MASARU ,  MIYAZAKI YOSHIROU

IPC: F28D15/06

CPC classification number: F28D15/06

Abstract: PURPOSE:To provide a variable conductance heat pipe with an excellent temperature controlability by disposing a heater in a reservoir to directly heat the gas in the reservoir by the heater. CONSTITUTION:When heat is inputted from an evaporation section 3, the vapor pressure becomes greater to compress the non-condensible gas 1 so as to enlarge the effective hat conducting area of a condensing section 2. As the heat transfer rate to a cooling/heating source is hightened as a result, it tends to prevent a temperature increase in the evaporation section 3, while when there is no heat input from the evaporation section 3, the non-condensible gas fills the entire space to prevent a heat radiation from the condensing section 2. Since the inside of the reservoir 4 is directly heated by a heater 5, the response of the electrical feedback for temperature control of the evaporation section 3 is very high.

Abstract translation: 目的：通过将加热器设置在储存器中以通过加热器直接加热储存器中的气体来提供具有优异温度控制性的可变电导热管。 构成：当从蒸发部分3输入热量时，蒸汽压力变大以压缩不可冷凝气体1，以便扩大冷凝部分2的有效帽的导电面积。作为冷却/加热的传热速率 因此，由于蒸发部3的温度上升，因而不会从蒸发部3输入热量，所以不可冷凝气体填充整个空间，防止冷凝的热辐射 由于储存器4的内部被加热器5直接加热，所以用于蒸发部3的温度控制的电反馈的响应非常高。

公开(公告)号：JPS59155156A

公开(公告)日：1984-09-04

申请号：JP2850683

申请日：1983-02-24

Applicant: Toshiba Corp

Inventor： ISHIZUKA MASARU ,  MIYAZAKI YOSHIROU

IPC: H01L23/42

CPC classification number: H01L23/42 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PURPOSE:To enable an effective transient cooling by enclosing a mixture of wax and a powdered metal in a sealed space between a cap and a substrate. CONSTITUTION:A mixture 4 of wax and a powdered metal is enclosed in a space consisting of a substrate 2 having fins on the surface on the side reverse to the surface, on which IC chips 1 are loaded, and a cap 3 brazed to the surface on the fin side. Heat passing through the substrate 2 is absorbed to the mixture 4. Since heat on a phase change of wax is utilized at that time, a temperature is kept constant, and conductivity is improved by the powdered metal and the fins. Accordingly, an effective transient cooling is enabled.

Abstract translation: 目的：通过将蜡和粉末金属的混合物包封在盖子和基材之间的密封空间中来实现有效的瞬态冷却。 构成：将蜡和粉末金属的混合物4封闭在由在其上装载有IC芯片1的表面的背面的表面上具有翅片的基板2构成的空间中，并将盖3钎焊到表面 在翅膀一边。 通过基板2的热量被吸收到混合物4.由于此时利用蜡的相变热，所以温度保持恒定，通过粉末金属和散热片改善导电性。 因此，能够实现有效的瞬态冷却。

公开(公告)号：JPH0982732A

公开(公告)日：1997-03-28

申请号：JP23355795

申请日：1995-09-12

Applicant: TOSHIBA CORP

Inventor： KUNO KATSUMI ,  IWASAKI HIDEO ,  ISHIZUKA MASARU

IPC: H01L23/32 ,  H01L21/52

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device of which heat radiation is efficient and the temperature rise of the semiconductor chip is suppressed. SOLUTION: A metal layer 41, that is provided with a mesh pattern of which mounting material 35 is formed with closed cells X, is arranged on the other side of the mounting material 35 that is fixed to a wiring substrate 32, on the other side of the surface on which a circuit 38 with the region 39 of higher heat density and the region 40 of lower heat density of a semiconductor chip are formed. In the circuit of metal layer 41, the pattern of a first region 42 that corresponds to the region 39 of higher heat density is formed relatively larger than the pattern of a second region 43 that corresponds to the region 40 of lower heat density and the mounting material 35 is thinner at the region of the metal layer 41 by the thickness of it and the gradient distribution of heat transfer rate can be formed.