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公开(公告)号：JP2007258571A
公开(公告)日：2007-10-04
申请号：JP2006083366
申请日：2006-03-24
Applicant: Toshiba Corp , 株式会社東芝
Inventor： SHUDO NAOKI , TAKEDA HIROMITSU , SAKURADA SHINYA
CPC classification number: H01L35/32
Abstract: PROBLEM TO BE SOLVED: To provide a thermoelectric conversion module which has high resistance to a high-temperature oxidizing atmosphere and is capable of efficiently utilizing thermal energy.
SOLUTION: The thermoelectric conversion module is equipped with a first insulating substrate; p-type and n-type semiconductor thermoelectric conversion members which are alternately arranged into a cylindrical form on the first insulating substrate; a second insulating substrate which is arranged in face to face with the first insulating substrate and interposing the p-type and n-type semiconductor thermoelectric conversion members between itself and the first insulating substrate; a first electrode and a second electrode which are interposed between the first insulating substrate and the p-type and n-type semiconductor thermoelectric conversion members, and between the second insulating substrate and the p-type and n-type semiconductor thermoelectric conversion members respectively, and connect the p-type and n-type semiconductor thermoelectric conversion members in series; and a glass film which is deposited to cover the exposed surface of the first electrode on the first insulating substrate side, and to cover a part of the exposed surface of the p-type and n-type semiconductor thermoelectric conversion members extending from the first electrode to the second electrode.
COPYRIGHT: (C)2008,JPO&INPITAbstract translation: 要解决的问题：提供一种对高温氧化气氛具有高耐性且能够有效利用热能的热电转换组件。 解决方案：热电转换模块配备有第一绝缘基板; p型和n型半导体热电转换构件，其在第一绝缘基板上交替布置成圆柱形; 第二绝缘基板，其与第一绝缘基板面对面并且在其自身与第一绝缘基板之间插入p型和n型半导体热电转换元件; 第一电极和第二电极分别介于第一绝缘基板与p型半导体热电转换部件和n型半导体热电转换部件之间，分别位于第二绝缘基板与p型半导体热电转换部件和n型半导体热电转换部件之间， 并连接p型和n型半导体热电转换元件; 以及玻璃膜，其被沉积以覆盖第一绝缘基板侧上的第一电极的暴露表面，并且覆盖从第一电极延伸的p型和n型半导体热电转换元件的暴露表面的一部分 到第二电极。 版权所有（C）2008，JPO＆INPIT
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公开(公告)号：JP2005294568A
公开(公告)日：2005-10-20
申请号：JP2004108065
申请日：2004-03-31
Applicant: Toshiba Corp , 株式会社東芝
Inventor： TAKEDA HIROMITSU , SHUDO NAOKI , SAKURADA SHINYA
Abstract: PROBLEM TO BE SOLVED: To provide a thermoelectric module that stably operates at high temperature for a long period of time.
SOLUTION: The thermoelectric module has a plurality of p-type semiconductor thermoelectric elements, a plurality of n-type semiconductor thermoelectric elements arranged to neighbor each of the p-type semiconductor thermoelectric elements, electrodes arranged on the upper and lower surfaces to connect the p-type semiconductor thermoelectric elements and n-type semiconductor thermoelectric elements alternately and in series, and antioxidant layers arranged on the side walls of the p-type semiconductor thermoelectric modules and n-type semiconductor thermoelectric elements neighboring each other. The antioxidant layers are made of a low-melting glass mainly comprising an amorphous boric anhydride.
COPYRIGHT: (C)2006,JPO&NCIPIAbstract translation: 要解决的问题：提供一种在高温下长期稳定运行的热电模块。 解决方案：热电模块具有多个p型半导体热电元件，多个n型半导体热电元件布置成邻近每个p型半导体热电元件，布置在上表面和下表面上的电极 交替地串联连接p型半导体热电元件和n型半导体热电元件，并且配置在p型半导体热电模块和n型半导体热电元件的侧壁上的抗氧化层彼此相邻。 抗氧化层由主要包含无定形硼酸酐的低熔点玻璃制成。 版权所有（C）2006，JPO＆NCIPI
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公开(公告)号：JP2005174856A
公开(公告)日：2005-06-30
申请号：JP2003416457
申请日：2003-12-15
Applicant: Toshiba Corp , 株式会社東芝
Inventor： YAMADA AKIYOSHI , TAKEDA HIROMITSU , UNNO HIROTAKA , SHINBA YUICHI
CPC classification number: H01J9/261 , H01J29/863 , Y10T428/31663
Abstract: PROBLEM TO BE SOLVED: To provide a sealant with a high vacuum degree maintained and reliability improved, and an image display device using the same. SOLUTION: The sealant is provided with two sheets of substrates 11, 12 arranged in opposition with a gap, and a vacuum seal part 33 sealing the substrates together at a given position and defining an airtight space between the substrates. The vacuum seal part 33 is equipped with a sealing layer 32 made of a sealant filled along the given position. The sealant has a melting point of 400°C or less with a contraction volume at coagulation within the range of +0.5% and -2.5%. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract translation: 要解决的问题：提供一种保持高真空度并提高可靠性的密封剂，以及使用该密封剂的图像显示装置。 解决方案：密封剂设置有两个与间隙相对布置的基板11,12;以及真空密封部33，其在给定位置处将基板密封在一起并限定基板之间的气密空间。 真空密封部33配备有沿着给定位置填充的密封剂制成的密封层32。 密封胶的熔点为400℃以下，凝固时的收缩体积为+ 0.5％〜-2.5％。 版权所有（C）2005，JPO＆NCIPI
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公开(公告)号：JP2001343230A
公开(公告)日：2001-12-14
申请号：JP2001102190
申请日：2001-03-30
Applicant: TOSHIBA CORP
Inventor： URANO TAEKO , IKEDA SHIGERU , SANO KENJI , TAKEDA HIROMITSU , YAMAJI TAKAMI , MOTOMIYA YOSHINORI
Abstract: PROBLEM TO BE SOLVED: To provide a simple and inexpensive apparatus which can read pattern data from cloths having unnoticeable patterns of dents and bumps. SOLUTION: This apparatus for reading the pattern with dents and bumps formed on the cloth has means for detecting a move amount of a probe in an up-down direction by relatively moving the probe to the cloth while the probe held to be movable up and down is kept in contact with the cloth and the pattern, and means for processing signals of the detected up-down movement amount and restoring pattern information.
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公开(公告)号：JP2001085717A
公开(公告)日：2001-03-30
申请号：JP26190899
申请日：1999-09-16
Applicant: TOSHIBA CORP
Inventor： KAMATA ATSUSHI , TAKEDA HIROMITSU , MOGI NAOTO
Abstract: PROBLEM TO BE SOLVED: To provide a substrate and a solar battery of low cost, where generation of thermal stresses which will introduce breakdown of a semiconductor thin film are suppressed, without forming a passivation film when a silicon crystal thin film is formed on the substrate, strength as a structural member is ensured and large size is enabled. SOLUTION: A substrate, on which surface carbon powder is densely stuck by mixing and baking thermosetting resin compound classified in phenol based or furan-based resin and carbon powder is used. Silicon powder is deposited on the surface, and is fused and crystallized, thereby forming a thin film of silicon crystal on a carbon substrate 11. A solar battery is manufactured by using the silicon layer.
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Patent Agency Ranking
公开(公告)号：JP2000022183A
公开(公告)日：2000-01-21
申请号：JP18490498
申请日：1998-06-30
Applicant: TOSHIBA CORP
Inventor： INAGAKI HIROTAKA , KAMATA ATSUSHI , SUENAGA SEIICHI , TAKEDA HIROMITSU
IPC: H01L31/04
Abstract: PROBLEM TO BE SOLVED: To improve a generation efficiency even if an impurity such as an oxide exists in a crystal grain boundary, by separating a polycrystal semiconductor film with an oxide or a nitride particle being formed at the crystal grain boundary among a plurality of semiconductor crystal particles, and setting the average thickness of the grain boundary layer to a specific range. SOLUTION: Powder-shaped or glass-shaped silicon that becomes a raw material is introduced from a raw material supply part 3 to a high-temperature plasma generation part 1 for generating a high-temperature plasma at several thousands - several tens of thousands deg.C, a melted object is deposited on a substrate 4, and a cooling speed is properly controlled by a substrate-heating part 6, thus forming a polycrystalline semiconductor film. The polycrystalline semiconductor film is separated by an oxide being formed at the crystal grain boundary among a plurality of semiconductor crystal particles or the grain boundary layer of a nitride, and the average thickness of the separated grain boundary layer is set to 10 nm-300 nm, thus improving a generation efficiency even if an impurity such as an oxide exists at the crystal grain boundary.
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公开(公告)号：JPH09113870A
公开(公告)日：1997-05-02
申请号：JP27251095
申请日：1995-10-20
Applicant: TOSHIBA CORP
Inventor： URANO TAEKO , TAKEDA HIROMITSU
Abstract: PROBLEM TO BE SOLVED: To eliminate deterioration in display performance caused by electric field responding impurities by providing a means which applies an AC pulse electric field that is inverted in polarity with time. SOLUTION: A liquid crystal cell 10 is applied with a specific electric field from a driver 11 for liquid crystal driving to display an image. To build, for example, the liquid crystal display element in a computer as a 2nd electric field applying means for preventing the omnipresence of electric field responding impurities, the clock generator 1 of the computer is utilized. At this time, the clock of the computer has a high frequency, so its pulse width is adjusted by a pulse stretcher 3 to a proper value. Then the AC pulse electric field having proper waveform is generated by using a computing unit 4 at need to prevent the deterioration, and this is applied between the source and drain of a TFT. In this case, the AC pulse width is set in the range of 10μs-2ms.
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公开(公告)号：JPH03183754A
公开(公告)日：1991-08-09
申请号：JP16271690
申请日：1990-06-22
Applicant: TOSHIBA CORP
Inventor： ITO MASAYUKI , SUZUKI TAKAO , OKUDE SHINICHIRO , NAKABASHI MASAKO , TAKEDA HIROMITSU
Abstract: PURPOSE:To obtain high strength at high temp. and to stably use a composite over a long period by providing refractory metal fiber coated with Nb layer and Nb-Al alloy layer into a matrix composed of super alloy of Fe base, Ni base, etc. CONSTITUTION:A beat resisting composite is formed by providing refractory metal fiber into a matrix composed of Fe-base, Ni-base, or Co-base super alloy. Refractory metal fiber composed of tungsten alloy, etc., and coated with Nb layer consisting of Nb or Nb alloy and further coated with Nb-Al alloy layer on the above Nb layer are used as the above refractory metal fiber. In this heat resisting composite, thermal deformation can be prevented even if repeated thermal load between high temp. and ordinary temp. is applied. Since the surface of the Nb layer is coated with the Nb-Al alloy layer, mutual diffusion between the super alloy as matrix and the refractory metal fiber at high temp. can be prevented and, as a result, deterioration in a reinforcement consisting of the above refractory metal fiber can be prevented.
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公开(公告)号：JPH03183538A
公开(公告)日：1991-08-09
申请号：JP15980190
申请日：1990-06-20
Applicant: TOSHIBA CORP
Inventor： ITO MASAYUKI , SUZUKI TAKAO , NAKABASHI MASAKO , TAKEDA HIROMITSU , OKUDE SHINICHIRO
Abstract: PURPOSE:To enable sufficient strength to be obtained even when subjected to high temperature and also enable it to be used stably for a long period by making fire-proof metallic fibers disposed in a basic body comprising a super alloy of a nickel or a cobalt have a specific coated layer of a niobium or a niobic alloy. CONSTITUTION:The title compound has a two layered construction of basic bodies 6 consisting of a nickel or a cobalt, fireproof metallic fibers 3 disposed within the basic bodies and niobic layers 4 consisting of niobium or niobic alloy, and hard metallic layers 5 comprising the hard metal of an iron group covering the niobic layers, and is equipped with coating layers coating the fireproof metallic fibers. As fire-proof metallic fibers, it is preferred to employ W wire, Mo wire and Ta wire, and W wire containing at least a kind of ThO2, K, Si and Al. A fireproof composite serves to cover the surface of the fireproof metallic fibers 3 disposed within the basic bodies 6 comprising a hard metal of an Ni or a Co with super alloy layers comprising the niobic layers 4 and iron-based super alloy 5 and also serves to prevent various elements from dispersing from the super alloy of the Ni or Co as a matrix 6 to the fire-proof metallic fibers.
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公开(公告)号：JPH03122062A
公开(公告)日：1991-05-24
申请号：JP25966089
申请日：1989-10-04
Applicant: TOSHIBA CORP
Inventor： NAKABASHI MASAKO , SUENAGA SEIICHI , MIYAGAWA SHIGERU , TAKEDA HIROMITSU
Abstract: PURPOSE:To improve sealing property and resistance to corrosion of an enveloper by joining a ceramic cylinder constructing ceramic enveloper sealing semiconductor element at inside and metallic sealing part materials through a specific alloy brazing material layer in a semiconductor device for a large electric power. CONSTITUTION:The aimed semiconductor device is composed of a ceramic cylinder 1, metallic sealing part materials 4 and 10 sealing an opening of the ceramic cylinder 1, a semiconductor element 7 mounted at inside of the ceramic cylinder 1 and a lead or an electrode part material connected to an electrode of the semiconductor element 7 and elongated to outside of the ceramic cylinder 1. The ceramic cylinder 1 is joined with the metallic sealing part materials 4 and 10 through an alloy brazing material layer 5 containing Ti and/or Zr (upper end part of the ceramic cylinder 1 is joined with seal cup 103 and lower end part of the ceramic cylinder 1 is joined with annular seal plate 41, respectively through brazing material layer 5).
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