METHOD OF ETCHING OXIDE FILM AND MANUFACTURE OF THIN-FILM TRANSISTOR

    公开(公告)号:JPH08330272A

    公开(公告)日:1996-12-13

    申请号:JP1608496

    申请日:1996-01-31

    Applicant: TOSHIBA CORP IBM

    Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing thin-film transistors which ensure etching for a substance having a metallic film and an oxide film. SOLUTION: In an etching step of a second gate insulated film 4 and a first gate insulated film 3, a glass substrate 1 having a gate electrode 2 of Al, of which a surface is coated with a first insulation film 3 of Al2 O3 is placed in an etching solution containing a hydrofluoric acid together with a counter electrode, and Al of the gate electrode 2 is set in an inactive potential, so that a surface of Al of the gate electrode 2 is held in an unetching state. A potential of a surface of Al2 O3 of the first gate insulated film 3 on Al of the gate electrode 2 is determined according to a potential of a counter electrode as Al2 O3 is an insulation film of high resistance, and the potential of the counter electrode is set at a nobler potential than Al and in a region where Al is ionized, and the potential of the surface of Al2 O3 is also set at a potential that Al is active. Only Al2 O3 of the first gate insulation film 3 on Al of the gate electrode 2 is removed.

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