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公开(公告)号:DE2611056A1
公开(公告)日:1976-09-30
申请号:DE2611056
申请日:1976-03-16
Applicant: TYCO LABORATORIES INC
Inventor: LABELLE JUN HAROLD E
Abstract: The invention is an improved apparatus for use in a system for growing crystalline bodies from the melt. The apparatus has a novel crucible die assembly in which the dies are located in cavities in the crucible side wall.
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公开(公告)号:DE2254616A1
公开(公告)日:1973-05-10
申请号:DE2254616
申请日:1972-11-08
Applicant: TYCO LABORATORIES INC
Inventor: LABELLE JUN HAROLD E , MLAVSKY ABRAHAM I , CRONAN CHARLES J
Abstract: 1382529 Crystal pulling TYCO LABORATORIES INC 30 Oct 1972 [8 Nov 1971] 49861/72 Heading BIS A "substantially monocrystalline" elongated body twisted along a selected axis is made by pulling a seed from a thin liquid film of material on a horizontal surface which terminates in sharp edges and has an edge configuration conforming to the desired cross-sectional configuration desired and simultaneously rotating the crystalline body about a selected axis whilst supplying material to the surface to maintain the film. The temperature of the film is controlled so that it is hottest near the surface. By "substantially monocrystalline" is meant a crystalline body comprised of a single crystal or two or more crystals growing together longitudinally but separated by a grain boundary of less than about 4. The material may be alumina ruby, spinel, beryllia, barium titanate, ythrium aluminium garnet, lithium niobate, lithium fluoride or calcium fluoride. The body may be a round rod with a spiral hole extending lengthwise, a hollow tube with a twist, a helical rod or tube, or a plate of dual axis curvature. Using the apparatus of figures 1 and 3, a monocrystalline tube of rectangular cross-section and having an axial twist is made by mounting a seed crystal 24, in chuck 22 with pulling rod 20 axially aligned with rod 38 of the die assembly shown in Figure 3. The crucible 12 is then filled with an inert gas and the R.F. coil 6 energized to melt the charge. The capillaries 46, fill with melt from melt 27 and the heating is adjusted so that the upper surface 44 of the die is about 10-40C higher than the melting point of the seed after which the seed crystal is lowered into contact with surface 44 and held there until connected with the melt in and from the capillaries by a film 48 (Figure 4) of the order of 0.1 mm. thickness. When the film is conected the pulling mechanism 18 is actuated to pull seed 24 upwards from the surface 44 without any rotation until growth is occurring from all points of the film, then the pulling mechanism is rotated. Growth is generally continued until the supply of melt is exhausted. Complex shapes can be produced by combining rotation of the seed crystal with a pulling movement of the type illustrated in Figures 11-13 (not shown), or by reverse rotation of the seed crystal.
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