公开(公告)号：US20250129474A1

公开(公告)日：2025-04-24

申请号：US18999454

申请日：2024-12-23

Applicant: Tokyo Electron Limited

Inventor： Ryota IFUKU ,  Masataka TOIYA ,  Eiki KAMATA ,  Hiroki YAMADA ,  Takashi MATSUMOTO

IPC: C23C16/455 ,  H01J37/32 ,  H01L21/02

Abstract: A method of processing a substrate includes placing the substrate on a stage in a process container, supplying a plasma generating gas into the process container to generate plasma of first power at a first pressure, controlling an inside of the process container to a second pressure lower than the first pressure, and supplying a carbon-containing gas into the process container to form a graphene film on the substrate.