公开(公告)号：US20040149389A1

公开(公告)日：2004-08-05

申请号：US10720189

申请日：2003-11-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Steven T. Fink

IPC: H01L021/306

CPC classification number: H01J37/32642 ,  H01L21/67069

Abstract: This invention relates to a plasma processing system. A common problem in the manufacture of semiconductors is the maintenance of a constant fluid flow throughout the chamber in which the semiconductors are being etched. The focus ring described herein helps control fluid flow such that all (or substantially all) of a substrate (e.g., semiconductor) surface is exposed to a constant flow of plasma throughout the etching process. An even fluid flow is maintained by adjusting the configuration of a focus ring, a pumping baffle, or a focus ring working with an auxiliary focus ring with respect to the semiconductor surface. By manipulating the position of the focus ring, pumping baffle, and auxiliary focus ring, fluid flow over the surface of the semiconductor can be increased, decreased, or kept stagnant.

Abstract translation: 本发明涉及等离子体处理系统。 半导体制造中的常见问题是在整个室内保持恒定的流体流动，其中半导体被蚀刻。 本文描述的聚焦环有助于控制流体流动，使得在整个蚀刻过程中，所有（或基本上全部）基底（例如半导体）表面暴露于恒定的等离子体流。 通过调整聚焦环，泵送挡板或与辅助聚焦环相对于半导体表面工作的聚焦环的结构来维持均匀的流体流动。 通过操纵聚焦环的位置，泵送挡板和辅助聚焦环，可以增加，减少或保持停滞在半导体表面上的流体流动。

公开(公告)号：US20040017049A1

公开(公告)日：2004-01-29

申请号：US10627599

申请日：2003-07-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Steven T. Fink

IPC: F16J015/08

CPC classification number: F16J15/004 ,  F16J15/061 ,  F16J15/062 ,  Y10S277/91

Abstract: A sealing apparatus includes a sealing arrangement and a groove in a base. The sealing arrangement may comprise an o-ring and a grounding gasket where both the o-ring and the grounding gasket partially protrude in a longitudinal direction from the groove. Thus, the grounding gasket, which is equipped with ends that can be pulled out of the groove, can be removed from the groove by a pulling force. This leaves the o-ring accessible for removal or maintenance at a much lower cost in terms of manufacturing and operational costs. The sealing arrangement may also include inner and outer o-rings which seal a fluid flow from the atmosphere.

Abstract translation: 密封装置包括密封装置和基部中的凹槽。 密封装置可以包括O形环和接地垫圈，其中O形环和接地垫圈都沿着纵向方向从凹槽部分地突出。 因此，配备有能够从槽中拉出的端部的接地衬垫可以通过拉力从槽中移除。 这使得O型环在制造和运营成本方面以低得多的成本进行拆卸或维护。 密封装置还可以包括密封来自大气的流体流的内部和外部O形环。

公开(公告)号：US20030084999A1

公开(公告)日：2003-05-08

申请号：US10287530

申请日：2002-11-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Richard Parsons ,  Steven T. Fink

IPC: H01L021/306 ,  C23C016/00

CPC classification number: H01J37/32082 ,  H01J37/32431 ,  H01J37/3266

Abstract: A plasma processing system that includes a chamber enclosing a plasma region. The system has a plasma source including a power source coupled to an electrode provided within the chamber to deliver RF power into the plasma region. The RF power forms an RF electromagnetic field that interacts with a gas in the plasma region to create a plasma. In one embodiment, an absorbing surface including an RF absorber is provided within the plasma region, and a protective layer is provided on the absorber to seal the absorber from plasma within the plasma region. Alternately, a non-reflecting surface is provided within the plasma region. The non-reflecting surface comprises a layer of dielectric material and acts to minimize reflection of RF power at a design frequency. The non-reflecting surface further includes a thickness equivalent to the quarter wavelength of a wave propagating in the dielectric layer at the design frequency.

Abstract translation: 一种等离子体处理系统，其包括包围等离子体区域的腔室。 该系统具有等离子体源，其包括耦合到设置在室内的电极的电源，以将RF功率输送到等离子体区域中。 RF功率形成与等离子体区域中的气体相互作用以产生等离子体的RF电磁场。 在一个实施例中，在等离子体区域内设置包括RF吸收体的吸收表面，并且在吸收器上设置保护层以将吸收体与等离子体区域内的等离子体密封。 或者，在等离子体区域内设置非反射表面。 非反射表面包括介电材料层，并且用于使设计频率处的RF功率的反射最小化。 非反射表面还包括相当于以设计频率在介电层中传播的波的四分之一波长的厚度。

公开(公告)号：US20030041970A1

公开(公告)日：2003-03-06

申请号：US10230175

申请日：2002-08-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Steven T. Fink

IPC: C23F001/00 ,  C23C016/00

CPC classification number: H01J37/32532 ,  H01J37/32834 ,  H01L21/67069

Abstract: A system and method for processing plural wafers in a plasma processing system using a single upper electrode. By placing plural wafer holders into a single plasma processing chamber, the footprint of a resulting plasma chamber may be made smaller than the total footprint of an equivalent number of individual chambers. Moreover, pumping may be increased by placing plural pumps below the wafer holders, and preferably in positions not obstructed by the wafer holders.

Abstract translation: 一种用于在使用单个上电极的等离子体处理系统中处理多个晶片的系统和方法。 通过将多个晶片保持器放置在单个等离子体处理室中，所得到的等离子体室的占地面积可以小于等同数量的单独室的总占地面积。 此外，可以通过将多个泵放置在晶片保持器下方，并且优选地在不被晶片保持器阻挡的位置中来增加泵送。

公开(公告)号：US20040189336A1

公开(公告)日：2004-09-30

申请号：US10807383

申请日：2004-03-24

Applicant: Tokyo Electron Limited

Inventor： Steven T. Fink

IPC: G01R031/02

CPC classification number: G01R31/04

Abstract: An apparatus and method for determining the connection status between a first apparatus and a second apparatus configured to be electrically and mechanically coupled to the first apparatus. A probe is coupled to the first apparatus. The probe is electrically coupled to the second apparatus when the first apparatus and the second apparatus are coupled. When the first apparatus and the second apparatus are separated, the probe disengages the second apparatus to signal disconnection of the first apparatus and the second apparatus.

Abstract translation: 一种用于确定第一装置和第二装置之间的连接状态的装置和方法，所述第一装置和第二装置被配置为电和机械耦合到第一装置。 探头耦合到第一装置。 当第一装置和第二装置耦合时，探针电耦合到第二装置。 当第一装置和第二装置分离时，探针使第二装置脱离信号以断开第一装置和第二装置的断开。

公开(公告)号：US20040185279A1

公开(公告)日：2004-09-23

申请号：US10764456

申请日：2004-01-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Steven T. Fink

IPC: B32B015/04

CPC classification number: H01J37/32477

Abstract: This invention relates to an improved component for a plasma processing system, and more particularly, to fasteners for internal chamber parts in a plasma processing chamber. Further, this invention relates to a method of manufacturing such a fastener.

Abstract translation: 本发明涉及一种用于等离子体处理系统的改进组件，更具体地说，涉及等离子体处理室内部腔室部件的紧固件。 此外，本发明涉及制造这种紧固件的方法。

公开(公告)号：US20040107561A1

公开(公告)日：2004-06-10

申请号：US10670742

申请日：2003-09-26

Applicant: Tokyo Electron Limited

Inventor： Steven T. Fink ,  Robert G. Hostetler

IPC: B01J019/08

CPC classification number: H01J37/321 ,  H01L21/67069 ,  Y10T29/49002

Abstract: An electrostatically shielded radio frequency (ESRF) plasma apparatus includes a process chamber which encloses a plasma area and a resonator assembly which surrounds the plasma area and includes a coil. The ESRF plasma apparatus also includes a clamping plate which secures the resonator assembly to at least the process chamber. In this manner, the geometry of the resonator chamber can be altered while maintaining the plasma area in an evacuated state. Additionally, an electrostatic shield may be provided and the ESRF plasma apparatus may also be configured such that the electrostatic shield can be replaced while maintaining the plasma area in an evacuated state. Additionally, the resonator assembly may be constructed of sheet metal and may be assembled using standard flanges. Additionally, seals, which are used to seal the plasma area and the resonator assembly, are standard seals.

Abstract translation: 静电屏蔽射频（ESRF）等离子体装置包括封闭等离子体区域的处理室和围绕等离子体区域并包括线圈的谐振器组件。 ESRF等离子体装置还包括夹紧板，其将谐振器组件固定到至少处理室。 以这种方式，可以改变谐振腔的几何形状，同时保持等离子体区域处于抽空状态。 另外，也可以设置静电屏蔽，并且也可以将ESRF等离子体装置构造为使得能够在保持等离子体区域处于抽空状态的同时更换静电屏蔽。 此外，谐振器组件可以由金属板构成，并且可以使用标准法兰来组装。 此外，用于密封等离子体区域和谐振器组件的密封件是标准密封件。

公开(公告)号：US20040062021A1

公开(公告)日：2004-04-01

申请号：US10664903

申请日：2003-09-22

Applicant: Tokyo Electron Limited

Inventor： Steven T. Fink

IPC: H05K009/00

CPC classification number: H01J37/321

Abstract: A plasma reactor sub-assembly includes both an electrostatic shield and a process tube. Optionally, the electrostatic shield and the process tube are connected. Alternatively, they are configured to fit together without being physically connected. The sub-assembly may be manufactured using a process tube nested within the circumference of an electrostatic shield, en electrostatic shield patterned directly on a process tube using, for example, thin film deposition, or a process tube bonded or not bonded to an electrostatic shield made of a flexible, electrical film material.

Abstract translation: 等离子体反应器子组件包括静电屏蔽和处理管。 可选地，静电屏蔽和处理管被连接。 或者，它们被配置成在没有物理连接的情况下装配在一起。 子组件可以使用嵌套在静电屏蔽体的圆周内的工艺管制造，使用例如薄膜沉积直接在工艺管上图案化的静电屏蔽，或者结合或未结合到静电屏蔽的工艺管 由柔性电膜材料制成。

公开(公告)号：US20040182833A1

公开(公告)日：2004-09-23

申请号：US10766474

申请日：2004-01-29

Applicant: Tokyo Electron Limited

Inventor： Steven T. Fink

IPC: B23K010/00

CPC classification number: H01L21/67069 ,  C23C16/4404 ,  H01J37/32082

Abstract: A method for manufacturing a substrate with a plasma processing system having preconditioned components. The method comprises obtaining a component of a plasma processing system that has been coated with a film of material, disposing the component in a plasma processing chamber, disposing a substrate on a chuck in the plasma processing chamber, and forming a plasma in a processing region within the plasma processing chamber.

Abstract translation: 一种用具有预处理组件的等离子体处理系统制造衬底的方法。 该方法包括获得已经涂覆有材料膜的等离子体处理系统的部件，将该部件设置在等离子体处理室中，将基板设置在等离子体处理室中的卡盘上，以及在处理区域中形成等离子体 在等离子体处理室内。

公开(公告)号：US20040129226A1

公开(公告)日：2004-07-08

申请号：US10739127

申请日：2003-12-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Eric J. Strang ,  Steven T. Fink

IPC: C23C016/00

CPC classification number: H01L21/67069 ,  H01J37/32642 ,  H01L21/68735

Abstract: A focus ring configured to be coupled to a substrate holder comprises a first surface exposed to a process; a second surface, opposite the first surface, for coupling to an upper surface of the substrate holder; an inner radial edge for facing a periphery of a substrate; and an outer radial edge. The second surface further comprises one or more contact features, each of which is configured to mate with one or more receiving features formed within the upper surface of the substrate holder. The focus ring can further comprise a clamping feature for mechanically clamping the focus ring to the substrate holder. Furthermore, a gas can be supplied to the contact space residing between the one or more contact features on the focus ring and the one or more receiving features on the substrate holder.

Abstract translation: 被配置为联接到衬底保持器的聚焦环包括暴露于过程的第一表面; 与所述第一表面相对的第二表面，用于联接到所述衬底保持器的上表面; 用于面对衬底的周边的内部径向边缘; 和外部径向边缘。 第二表面还包括一​​个或多个接触特征，每个接触特征被配置为与形成在衬底保持器的上表面内的一个或多个接收特征配合。 聚焦环还可以包括用于将聚焦环机械地夹持到基板保持器的夹紧特征。 此外，可以将气体供应到驻留在聚焦环上的一个或多个接触特征与衬底保持器上的一个或多个接收特征之间的接触空间。