公开(公告)号：EP2854160B1

公开(公告)日：2020-04-08

申请号：EP13794483.1

申请日：2013-04-16

Applicant: Tokyo Electron Limited

Inventor： NISHIMURA Eiichi ,  SHIMIZU Akitaka ,  YAMASHITA Fumiko ,  URAYAMA Daisuke

IPC: H01L21/3065 ,  H01J37/32

公开(公告)号：EP2975633A1

公开(公告)日：2016-01-20

申请号：EP14785929.2

申请日：2014-04-09

Applicant: Tokyo Electron Limited

Inventor： MORIKITA Shinya ,  NISHIMURA Eiichi ,  YAMASHITA Fumiko

IPC: H01L21/3065 ,  H01L21/027 ,  H05H1/46

CPC classification number: H01L21/31133 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0002 ,  H01J37/32091 ,  H01J37/32577 ,  H01L21/02118 ,  H01L21/02351 ,  H01L21/0271 ,  H01L21/31138 ,  H01L21/31144

Abstract: A pattern is formed on an underlying layer of a target object by a pattern forming method. The pattern forming method includes (a) forming a block copolymer layer, which includes a first polymer and a second polymer and is configured to be self-assembled, on the underlying layer; (b) processing the target object to form a first region containing the first polymer and a second region containing the second polymer in the block copolymer layer; (c) etching the second region partway in a thickness direction of the second region in a capacitively coupled plasma processing apparatus after the processing of the target object; (d) generating secondary electrons from an upper electrode of the plasma processing apparatus by applying a negative DC voltage to the upper electrode and irradiating the secondary electrons onto the target object, after the etching of the second region; and (e) additionally etching the second region in the plasma processing apparatus after the irradiating of the secondary electrons onto the target object.

Abstract translation: 通过图案形成方法在目标物体的下层上形成图案。 该图案形成方法包括：（a）在底层上形成包括第一聚合物和第二聚合物并被配置为自组装的嵌段共聚物层; （b）在所述嵌段共聚物层中处理所述目标物以形成包含所述第一聚合物的第一区域和包含所述第二聚合物的第二区域; （c）在目标物体的处理之后，在电容耦合等离子体处理装置中在第二区域的厚度方向的中途蚀刻第二区域; （d）在蚀刻所述第二区域之后，通过向所述上电极施加负DC电压并将所述二次电子照射到所述目标物体上从所述等离子体处理装置的上电极产生二次电子; 和（e）在将二次电子照射到目标物体上之后，另外蚀刻等离子体处理装置中的第二区域。

公开(公告)号：EP2975633B1

公开(公告)日：2019-09-11

申请号：EP14785929.2

申请日：2014-04-09

Applicant: Tokyo Electron Limited

Inventor： MORIKITA Shinya ,  NISHIMURA Eiichi ,  YAMASHITA Fumiko

IPC: H01L21/311 ,  H01L21/027

公开(公告)号：EP2854160A1

公开(公告)日：2015-04-01

申请号：EP13794483.1

申请日：2013-04-16

Applicant: Tokyo Electron Limited

Inventor： NISHIMURA Eiichi ,  SHIMIZU Akitaka ,  YAMASHITA Fumiko ,  URAYAMA Daisuke

IPC: H01L21/3065 ,  H01J37/32

Abstract: An apparatus for processing reaction products that are deposited when an etching target film contained in a target object to be processed is etched is provided with: a processing chamber; a partition plate; a plasma source; a mounting table; a first processing gas supply unit; a second processing gas supply unit. The processing chamber defines a space, and the partition plate is arranged within the processing chamber and divides the space into a plasma generating space and a substrate processing space, while suppressing permeation of ions and vacuum ultraviolet rays. The plasma source generates a plasma in the plasma forming space. The mounting table is arranged in the substrate processing space to mount the target object thereon.

Abstract translation: 一种处理反应产物的处理装置，其特征在于，在被处理对象物中包含的蚀刻对象膜被蚀刻时， 隔板 等离子体源 安装台; 第一处理气体供应单元; 第二处理气体供应单元。 处理室限定空间，并且分隔板布置在处理室内，并且将空间分成等离子体产生空间和基板处理空间，同时抑制离子的渗透和真空紫外线。 等离子体源在等离子体形成空间中产生等离子体。 安装台布置在基板处理空间中以将目标物体安装在其上。