公开(公告)号：US20160108521A1

公开(公告)日：2016-04-21

申请号：US14740359

申请日：2015-06-16

Applicant: Tsinghua University

Inventor： Huaqiang WU ,  Shuoguo YUAN ,  Han LI ,  He QIAN

IPC: C23C16/455 ,  C23C16/56 ,  C23C16/22 ,  H01J1/304

CPC classification number: H01J1/304 ,  C23C16/305 ,  C23C16/4488 ,  C23C16/45523 ,  H01J9/025 ,  H01J2201/30449

Abstract: The present disclosure relates to a method for preparing a molybdenum disulfide film used in a field emission device, including: providing a sulfur vapor; blowing the sulfur vapor into a reaction chamber having a substrate and MoO3 powder to generate a gaseous MoOx; feeding the sulfur vapor into the reaction chamber sequentially, heating the reaction chamber to a predetermined reaction temperature and maintaining for a predetermined reaction time, and then cooling the reaction chamber to a room temperature and maintaining for a second reaction time to form a molybdenum disulfide film on the surface of the substrate, in which the molybdenum disulfide film grows horizontally and then grows vertically. The method according to the present disclosure is simple and easy, and the field emission property of the MoS2 film obtained is good.

Abstract translation: 本公开涉及一种制备用于场致发射装置的二硫化钼膜的方法，包括：提供硫蒸汽; 将硫蒸气吹入具有基底和MoO 3粉末的反应室中以产生气态MoO x; 将硫蒸气依次进料到反应室中，将反应室加热至预定的反应温度并保持预定的反应时间，然后将反应室冷却至室温并保持第二反应时间以形成二硫化钼膜 在其中二硫化钼膜水平生长然后垂直生长的基底表面上。 根据本公开的方法简单易行，并且所获得的MoS2膜的场发射性能良好。