Abstract:
PURPOSE: To provide a resist having submicron resolution equal or superior to a multilayer resist system by selecting a phenolic polymer composition of the resist from mixtures of phenolic polymers or mixtures of a phenolic polymer(s) and another aromatic polymer(s). CONSTITUTION: In the production of this resist, a wide variety of polymers can be used, however, a phenolic polymer selected from among the following polymers and polymer mixtures is preferably used: (1) a condensation product of phenol, naphthol or any one of their derivatives, whose ring(s) is substituted by an alkyl or aryl group(s) or a halogen atom(s) and an aliphatic or aromatic aldehyde optionally substituted by a halogen atom(s); (2) poly(vinylphenol) having phenol groups each optionally substituted by an alkyl or aryl group(s) or a halogen atom(s); (3) a copolymer of vinylphenol and an ethylenically unsaturated compound; and (4) mixtures of plural polymers selected from the above polymers or mixtures of a polymer(s) selected from the above polymers and another aromatic polymer(s) such as polystyrene or poly(N-vinylcarbazole). Thus, high resolution and a high aspect ratio of the resist can be realized.
Abstract:
PURPOSE: To enhance the contrast and selectivity of a pattern by incorporating a specified arom. polycyclic sulfonic acid (salt) or arom. polycylic carboxylic acid (salt). CONSTITUTION: This compsn. contains a phenolic resin, a diazoquinone compd. and free arom. polycyclic sulfonic acid or carboxylic acid (A) and/or its ammonium salt (B) and/or its halide. When the salt B is contained, a component represented by the formula is used as the cation of the salt B and an acid other than amino acids is used as the acid component. In the formula, each of R1 -R4 is H, a 1-4C alkyl, etc. Naphthalenesulfonic acid, naphthalenecarboxylic acid, diazoquinonesulfonic acid or diazoquinonecarboxylic acid is preferably used as the acid A. After a layer of this compsn. is exposed to UV, a protective layer is preferably formed by selectively adding an Si compd.