公开(公告)号：JP2001156287A

公开(公告)日：2001-06-08

申请号：JP33154899

申请日：1999-11-22

Applicant: UNITED MICROELECTRONICS CORP

Inventor： KA SOGI

IPC: H01L29/78 ,  H01L21/28 ,  H01L21/336

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicide structure which is more improved in quality and where a leakage current is prevented from occurring. SOLUTION: A method of manufacturing a silicide structure is that the silicide structure is self-aligned and prevented from increasing in sheet resistance due to a reduction in a wire width by taking advantage of the specific characteristic of cobalt in which cobalt moves downward to react on silicon atoms. Furthermore, the characteristics of silicon atom in which silicon atoms move upward to react on titanium is also utilized. Titanium induces the upward movement of silicon atoms. A titanium layer is used as a barrier layer, by which cobalt acts less on silicon atoms, and a leakage current is prevented. A silicide multilayered structure is kept stable in resistance and capable of preventing a leakage current from occurring.

公开(公告)号：JP2003249555A

公开(公告)日：2003-09-05

申请号：JP2002041178

申请日：2002-02-19

Applicant: UNITED MICROELECTRONICS CORP

Inventor： CHIN SEIYU ,  KA SOGI

IPC: H01L27/04 ,  H01L21/822

Abstract: PROBLEM TO BE SOLVED: To provide a bar circuit which reduces crosstalks and eddy currents in an integrated circuit. SOLUTION: The bar circuit comprises a first conductivity semiconductor substrate, a second conductivity first elongate well in the semiconductor substrate, and a second conductivity second elongated well in the semiconductor substrate. The second elongated well is under the first elongate well and adjacent to under the first elongated well, thereby connecting it with a barrier to cut off the crosstalks and eddy currents. COPYRIGHT: (C)2003,JPO