公开(公告)号：JP2000208607A

公开(公告)日：2000-07-28

申请号：JP460099

申请日：1999-01-11

Applicant: UNITED MICROELECTRONICS CORP

Inventor： KO SHOGEN ,  WU JUAN-YUAN ,  RO KATETSU

IPC: H01L21/76 ,  H01L21/3105 ,  H01L21/762

Abstract: PROBLEM TO BE SOLVED: To prevent a semiconductor device from being short-circuitted due to a microscratch. SOLUTION: This method for forming an insulating part in the shape of shallow groove on a semiconductor substrate 200 is provided with a condensation process after an insulating plug 212a is chemically/physically ground. Thus, a microscratch can be prevented from forming a deep scratch by the insulating plug 212a. Therefore, short-circuitting due to the microscratch will not occur.

公开(公告)号：JP2000235981A

公开(公告)日：2000-08-29

申请号：JP3925599

申请日：1999-02-17

Applicant: UNITED MICROELECTRONICS CORP

Inventor： KO SHOGEN ,  GO SHUNGEN ,  RO KATETSU

IPC: H01L21/3205 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a waveform pattern for the formation of a contact or a conductive wire. SOLUTION: A substrate 200 having an opening part for forming a double waveform pattern, a waveform pattern or a mutual connection is used. A barrier layer 206 having the same shape as that of the substrate 200 is formed thereon, and then a seed layer is formed on the opening part. A metal layer 210 is selectively formed for filling the opening part. A mechanochemical polishing step is performed until the substrate 200 is exposed.