公开(公告)号：JP2001110778A

公开(公告)日：2001-04-20

申请号：JP28395699

申请日：1999-10-05

Applicant: UNITED MICROELECTRONICS CORP

Inventor： RO CHUKAN ,  RO BUNSEN ,  SHU SHIKO ,  RIN KOYO

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/68 ,  H01L21/683

Abstract: PROBLEM TO BE SOLVED: To provide a device for preventing plasma from etching a wafer clamp in a semiconductor process. SOLUTION: This device has a receiving base, a lower electrode, a wafer clamp, a semiconductor wafer, a quartz ring, an upper electrode, a cooling plate, an anodize, and a gas hole. The wafer clamp is used for tightly pinching the semiconductor wafer and has a clamp ring, a recessed holder, and a recessed portion, and the clamp ring is used for supporting the semiconductor wafer. The recessed holder has one semi-ellipsoidal surface in the clamp ring, and during a deposition process or an etching process, polymer is formed on the back of the recessed holder to prevent the wafer clamp from being etched by plasma. The recessed portion is arranged at a position higher than the neighboring recessed holder.