公开(公告)号：JP2001053296A

公开(公告)日：2001-02-23

申请号：JP22206099

申请日：1999-08-05

Applicant: UNITED MICROELECTRONICS CORP

Inventor： RIN SHIGYO

IPC: H01L31/0232

Abstract: PROBLEM TO BE SOLVED: To reduce a flat thin film and a single protection layer and shorten the production cycle by forming a color filter lens on a part of a base and forming a conductor layer on the base and thereafter forming an insulation layer thereon. SOLUTION: A flat inner metallic dielectric layer is formed on a base (301) and a photosensitive region in exposed. A color filter lens layer is formed on an exposed photosensitive region of an inner metallic dielectric layer (302). A protection coating conductor is formed on the inner metallic dielectric layer (303), and after the protection coating conductor is made an upper metallic layer of a photosensor device, a single protecting layer as an insulation layer is formed and used for protection of a color filter lens and a metallic layer. Thereby, it is possible to reduce the flat thin film and a single protective layer, thus shortening the production cycle.

公开(公告)号：JP2000323691A

公开(公告)日：2000-11-24

申请号：JP12300999

申请日：1999-04-28

Applicant: UNITED MICROELECTRONICS CORP

Inventor： RIN SHIGYO ,  CHIN SHUKUREI ,  YO JOHO

IPC: H01L31/10 ,  H01L27/14 ,  H01L27/148

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor image sensor having an improved transmissivity for a blue-color light. SOLUTION: This semiconductor image sensor is provided with a bonding pad 302 formed on a semiconductor substrate 300. An oxide layer 304 is arranged on the semiconductor substrate 300 to cover the bonding pad 302. An SOG 306 is arranged on the oxide layer 304, and a silicon oxynitride layer 310 is arranged on the SOG 306, and then a color filter 312 is arranged thereon. Due to high transmissivity of the SOG 306 and the adoption of the silicon oxynitride layer 310, the transmissivity for blue-color light in the semiconductor image sensor can be improved.