公开(公告)号：JP2000323691A

公开(公告)日：2000-11-24

申请号：JP12300999

申请日：1999-04-28

Applicant: UNITED MICROELECTRONICS CORP

Inventor： RIN SHIGYO ,  CHIN SHUKUREI ,  YO JOHO

IPC: H01L31/10 ,  H01L27/14 ,  H01L27/148

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor image sensor having an improved transmissivity for a blue-color light. SOLUTION: This semiconductor image sensor is provided with a bonding pad 302 formed on a semiconductor substrate 300. An oxide layer 304 is arranged on the semiconductor substrate 300 to cover the bonding pad 302. An SOG 306 is arranged on the oxide layer 304, and a silicon oxynitride layer 310 is arranged on the SOG 306, and then a color filter 312 is arranged thereon. Due to high transmissivity of the SOG 306 and the adoption of the silicon oxynitride layer 310, the transmissivity for blue-color light in the semiconductor image sensor can be improved.