公开(公告)号：JPH1168052A

公开(公告)日：1999-03-09

申请号：JP21521897

申请日：1997-08-08

Applicant: UNITED MICROELECTRONICS CORP

Inventor： SUN SHIH-WEI ,  SAI MOKIN

IPC: H01L27/08

Abstract: PROBLEM TO BE SOLVED: To form a gate oxide of different thickness easily on a single chip by implanting a dopant into a first region and a dopant of different dosage into a second region thereby growing an oxide in the first region and an oxide of different thickness in the second region. SOLUTION: Nitrogen ions are implanted into the surface of a substrate in section A through a pad-like oxide layer 26 until a dosage of about 5×10 /cm is reached, for example. The silicon surface in section A implanted with nitrogen ions is then exposed to an oxidizing atmosphere and a gate oxide layer of about 40Å is grown on the surface of the substrate. Subsequently, nitrogen ions are implanted into section B of the substrate 10 through the exposed pad-like oxide layer 26. Nitrogen ions are implanted at a dosage of 2×10 /cm , for example. Subsequently, the silicon surface in section B implanted with nitrogen ions is exposed to an oxidizing atmosphere and a gate oxide layer of about 75Å is formed.

公开(公告)号：JPH1117170A

公开(公告)日：1999-01-22

申请号：JP944798

申请日：1998-01-21

Applicant: UNITED MICROELECTRONICS CORP

Inventor： SAI MOKIN

IPC: H01L29/78

Abstract: PROBLEM TO BE SOLVED: To solve the problem of irregular reflection by providing a polysilicon layer and a gate comprising a noncrystal layer on the polysilicon layer on a gate structure. SOLUTION: A gate structure has a gate 340 of the double-layer structure. The gate 340 is formed on a silicon oxide layer 310 on a silicon substrate 300 by photoengraving technology. The gate 340 comprises a polysilicon layer 320 and noncrystal silicon layer 330. The noncrystal silicon 330 is formed on the polysilicon layer 320. A silicide layer is formed on the silicon layer 330 by self-aligning silicide process. Thus, the problem of the surface irregular reflection of the light in photoengraving process can be solved, and the formation of a gate pattern can be performed highly accurately.