公开(公告)号：JP2001135592A

公开(公告)日：2001-05-18

申请号：JP31064499

申请日：1999-11-01

Applicant: UNITED MICROELECTRONICS CORP

Inventor： SAI SEIGEN ,  RYU SHIKEN ,  WU JUAN-YUAN

IPC: H01L21/28 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a dual damascene. SOLUTION: Prior to forming of fluorinated silicate glass(FSG) layers 210a, 218a functioning as an inter-metal dielectric(IMD) layer on a semiconductor substrate 200, undoped silicate glass(USG) liners 208a, 216a are formed to thereby solve the question about the surface dependence and obtain an FSG layer having a good thickness uniformity and a high reliability. The USG liners improve the adhesion between the FSG layer and other material layer and reduce the particle growth ratio.

公开(公告)号：JP2001156056A

公开(公告)日：2001-06-08

申请号：JP33166599

申请日：1999-11-22

Applicant: UNITED MICROELECTRONICS CORP

Inventor： RYU SHIKEN ,  SAI SEIGEN ,  SHA BUNEKI

IPC: H01L21/31 ,  C23C16/50 ,  H01L21/205 ,  H05H1/46

Abstract: PROBLEM TO BE SOLVED: To provide an apparatus for preventing plasma-induced damages to a wafer. SOLUTION: This apparatus is suited for use with a plasma deposition apparatus for forming dielectric layers. The invented apparatus comprises a screen grid 302 having a region slightly greater than the region size of the wafer 300 under processing, the screen grid 302 is disposed just above the wafer, and a negative bias is applied to the screen grid in the initial stage of a process of forming the dielectric layer, thereby filtering positive ions of the plasma in the deposition apparatus. In the initial stage of a plasma deposition process, an electron flat gun 304 neutralizes electric charges on the wafer to form a non-plasma-ion-damage liner layer on the wafer surface before surely depositing the dielectric layer.

公开(公告)号：JP2001127063A

公开(公告)日：2001-05-11

申请号：JP30267499

申请日：1999-10-25

Applicant: UNITED MICROELECTRONICS CORP

Inventor： SAI SEIGEN ,  RYU SHIKEN ,  WU JUAN-YUAN

IPC: H01L21/3205 ,  H01L21/318 ,  H01L23/52

Abstract: PROBLEM TO BE SOLVED: To provide a method of increasing the adhesion between copper and silicon nitride. SOLUTION: First, a substrate coated with a dielectric layer is prepared. Then, a copper layer is formed on the dielectric layer and a copper phosphide intermediate layer is formed on the copper layer by a PECVD method and then a silicon nitride layer is formed on the copper phosphide intermediate layer. All the copper oxide layers appearing on the surface of the copper layer are turned into a copper phosphide intermediate layer. The copper phosphide intermediate layer has a lower resistance than a copper oxide and has an excellent property of effectively preventing the diffusion of copper into the dielectric layer surrounding copper.