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    Forming aluminium@ plug by selective chemical vapour deposition
    2.
    发明专利
    Forming aluminium@ plug by selective chemical vapour deposition 未知

    公开(公告)号：DE19702388A1

    公开(公告)日：1998-01-08

    申请号：DE19702388

    申请日：1997-01-23

    Applicant: UNITED MICROELECTRONICS CORP

    Inventor： SUN SHI-CHUNG ,  CHIU HIEN-TIEN ,  TSAI MING-HSING

    IPC: C23C16/04 ,  C23C16/20 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L21/203 ,  H01L21/283

    Abstract: An improved method of fabricating an aluminum plug using a selective chemical vapor deposition (CVD) procedure. A semiconductor component is first formed in a substrate having an insulating layer formed over the surface thereof. The insulating layer has a contact opening formed therein that exposes a conductive region of the semiconductor component. Then, a vacuum thermal annealing treatment is performed on the device substrate. Dimethylethylamine alane (DMEAA) is used as a precursor for then depositing an aluminum layer over the surface of the substrate, using a CVD procedure performed at a substrate temperature not exceeding 250 {C, for fabricating an aluminum plug in the contact opening. The aluminum plug is selectively deposited over the surface of the exposed conductive region, while relatively not deposited over the surface of the insulating layer.

    Method of fabricating an aluminium plug using selective chemical vapour deposition
    4.
    发明专利
    Method of fabricating an aluminium plug using selective chemical vapour deposition 未知

    公开(公告)号：GB2320129A

    公开(公告)日：1998-06-10

    申请号：GB9625172

    申请日：1996-12-04

    Applicant: UNITED MICROELECTRONICS CORP

    Inventor： SUN SHI-CHUNG ,  CHIU HIEN-TIEN ,  TSAI MING-HSING

    IPC: C23C16/04 ,  C23C16/20 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768

    Abstract: An improved method of fabricating an aluminum plug using a selective chemical vapor deposition (CVD) procedure. A semiconductor component is first formed in a substrate having an insulating layer formed over the surface thereof. The insulating layer has a contact opening formed therein that exposes a conductive region of the semiconductor component. Then, a vacuum thermal annealing treatment is performed on the device substrate. Dimethylethylamine alane (DMEAA) is used as a precursor for then depositing an aluminum layer over the surface of the substrate, using a CVD procedure performed at a substrate temperature not exceeding 250 ‹C, for fabricating an aluminum plug in the contact opening. The aluminum plug is selectively deposited over the surface of the exposed conductive region, while relatively not deposited over the surface of the insulating layer.

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